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Nanoscale materials, or nanomaterials, are materials where at least one relevant length scale is within the range of nanometres. These materials usually have very different properties from their bulk counterparts, due to the importance of quantum and surface boundary effects.
Tracking the momentum of scattered electrons reveals the temporal evolution of phonon populations on ultrafast timescales, helping to quantify the contributions of the cooperative electronic–lattice order responsible for phase transitions in quantum materials.
Atomic-layer yttrium doping can be used to form ohmic contacts between molybdenum disulfide channel layers and metals, creating high-performance 2D transistors with low contact resistances.
Porous membranes struggle to achieve tight size exclusion. Membranes with uniform pore sizes and flow regimes that maximize interactions offer a path to unprecedented selectivity.
Structural deformation can modify the optical properties of quantum dots. Here, the author report strain-graded CdSe-ZnSe quantum dots, allowing for spectrally stable and pure emission of photons at accelerated rates with near unity luminescence efficiency.
C–H activation in long-chain organic molecules remains largely unexplored. Here, the authors report light-driven C–H activation mediated by 2D TMDCs and the resultant synthesis of luminescent carbon dots.
A highly tunable Nernst effect has been demonstrated in graphene/indium selenide devices, achieving a record Nernst coefficient at ultralow temperatures, highlighting its potential for quantum technologies and low-temperature applications.
Tracking the momentum of scattered electrons reveals the temporal evolution of phonon populations on ultrafast timescales, helping to quantify the contributions of the cooperative electronic–lattice order responsible for phase transitions in quantum materials.
Two-dimensional (2D) semiconductors could be used to build advanced 3D chips based on monolithic 3D integration. But challenges related to growing single-crystalline materials at low temperatures — as well as enhancing the performance of 2D transistors — need to be addressed first.
Atomic-layer yttrium doping can be used to form ohmic contacts between molybdenum disulfide channel layers and metals, creating high-performance 2D transistors with low contact resistances.
An article in Nature Communications reports the identification of two non-volatile spin textures in twisted double-bilayer CrI3, which can be switched by a magnetic field and read out via electrical measurements.
A paper in the Journal of Applied Physics reports a way to apply strain to two-dimensional devices while measuring simultaneously their electrical and optical properties.
An article in Advanced Materials shows that the moiré superlattice in a ferromagnetic heterostructure comprising a twisted WS2/WS2 bilayer enhances the spin–orbit torque efficiency and increases its gate tunability.