Wide Bandgap Semiconductor: From Epilayer to Devices
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".
Deadline for manuscript submissions: 31 August 2024 | Viewed by 9944
Special Issue Editors
Interests: solid-state lighting devices; solar cells; power device; HEMT; flexible electronics; optoelectronics; nitride and oxide semiconductor MOCVD growths
Special Issues, Collections and Topics in MDPI journals
Interests: reliability; degradation mechanisms; failure analysis; microelectronics; semiconductor devices; counterfeit electronics
Interests: MOCVD; thin films; GaAs; semiconductor device physics; epitaxy
Interests: single event effect (SEE) in semiconductor devices; electrostatic discharge (ESD) and transient voltage suppressors (TVS); power semiconductor devices
Interests: materials science; physical vapor deposition; magnetron sputter epitaxy; molecular beam epitaxy; nitride semiconductors; thin films; nanostructures; nanodevices
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
According to the U.S. Department of Energy’s Advanced Research Project Agency for Energy, by 2030, 80 % of electricity will flow through a power electronic device. Power electronic devices are competent in controlling and converting electrical power consumption and are utilized in home appliances, automotives, industries, defense system, aerospace, renewable energy systems, and utility systems. In the modern world, energy-efficient reliable electronic devices are inevitable to reduce power consumption. Recently, wide bandgap (WBG) semiconductors have emerged as potential candidates for next-generation power electronic devices with advantages such as larger operating temperature, energy efficiency, high carrier mobility, high critical breakdown fields, faster switching, and high radiation resistance. Silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), aluminum nitride (AlN), and diamond WBG power electronics devices are facilitating the miniaturization of devices with more reliability and efficiency.
The present Special Issue of Electronics is planned as a collection of reviews and research articles on the epitaxy of WBG semiconductors and devices related to the area. The potential topics of interests include but are not limited to research on epitaxy, simulations, characterizations, and devices of SiC, GaN, Ga2O3, AlN, and diamond.
Prof. Dr. Ray-Hua Horng
Dr. Giovanna Mura
Prof. Dr. Qixin Guo
Prof. Dr. Chin-Han(King) Chung
Dr. Ching-Lien Hsiao
Guest Editors
Manuscript Submission Information
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Keywords
- wide bandgap
- power device
- SiC
- GaN
- Ga2O3
- diamond
