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Vapor-Phase Deposited Polymer Dielectric Layers for Organic Electronics: Design, Characteristics, and Applications

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Abstract

The emergence of organic electronics has transformed the landscape of electronic devices, paving the way for future advancements in low-power, flexible, and wearable electronics compatible with various form factors. Polymeric dielectric layers are pivotal in the implementation of organic electronics due to their inherent deformable characteristics as well as outstanding insulating performance. Here, the review highlights an innovative technology termed initiated chemical vapor deposition (iCVD) for synthesizing polymer dielectric materials, particularly in the context of organic thin-film transistors (OTFTs). The all-dry polymer deposition process circumvents issues associated with conventional solvent-based methods, such as residual solvent, potential damage to the substrate, and the lack of large-area uniformity, allowing for ultra-thin, high-purity polymer dielectric layers with exceptional dielectric performance comparable to inorganic dielectrics. Furthermore, iCVD process enables the incorporation of various chemical functionalities into the dielectric layer, which enables the generation of versatile, high-performance organic electronic devices. Based on the beneficial aspects of the iCVD process, the review provides an overview of iCVD polymer dielectric layers, emphasizing their significance and potential toward innovative applications in the fields of organic electronic, including OTFTs, resistive random-access memory (RRAM), flash memory and logic circuits.

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Fig. 1
Fig. 2

Reproduced with permission from Ref. [5], Copyright 2015, Springer Nature. d Schematic of fabricated OTFTs with the iCVD dielectrics (pEGDMA, pIBA, pPFDA). e The Ji measured at 3 MV cm−1 for various tensile strain values for pIBA, pEGDMA, and pPFDA layers. The inset photograph shows the set-ups for bending test of MIM devices on PEN substrate. Reproduced with permission from Ref. [6], Copyright 2015, Wiley–VCH GmbH. f Transfer characteristics of C60 OTFTs using the series of copolymer dielectrics without the interfacial layer. g Transfer characteristics of C60 OTFTs using the series of copolymer dielectrics with the interfacial layer. The arrow denotes the increasing VI fraction. h Mobility (left axis) and VT (right axis) as a function of VI content in the copolymer dielectrics with the interfacial layer. Reproduced with permission from Ref. [20], Copyright 2016, Wiley–VCH GmbH

Fig. 3

Reproduced with permission from Ref. [21], Copyright 2017, American Chemical Society. c Estimation of dielectric constant of CEA copolymer dielectrics varying mole fraction of crosslinker DEGDVE and BDDVE. Reproduced with permission from Ref. [22], Copyright 2020, Wiley–VCH GmbH. d Image of molecular thin hydrophobic skin layer of bulk high-k dielectric enabled by all-dry, vapor-phase process. Reproduced with permission from Ref. [23], Copyright 2019, American Chemical Society

Fig. 4

Reproduced with permission from Ref. [24], Copyright 2023, Springer Nature

Fig. 5

Reproduced with permission from Ref. [101], Copyright 2015, American Chemical Society. g Structure of flexible pV3D3 RRAM as electronic synapse. h Reset performance of the flexible pV3D3 RRAM following the creation of a Cu filament using a Icc of 10–5 A. i Reset performance of the flexible pV3D3 RRAM with a thin filament produced through the gradual Icc increase approach. Reproduced with permission from Ref. [106], Copyright 2019, American Chemical Society. j Initial and 200th I-V characteristics of the flexible pV3D3 RRAM observed through repetitive DC voltage sweeps. k IV characteristics of the flexible pV3D3 RRAM before and after bending. l IV characteristics of the flexible pV3D3 RRAM before and after the submerged duration of 30 h in water. Reliability indicated by intra-HD of pV3D3 RRAM in response to both m flexibility test and n humidity-resistant test. Reproduced with permission from Ref. [112], Copyright 2022, Wiley–VCH GmbH

Fig. 6

Reproduced with permission from Ref. [119], Copyright 2017, Springer Nature. d Schematic device structure of the proposed flash memory and TEM image. e Chemical structures of the pV3D3 and the pEGDMA used as TDL and BDL, respectively. f A photograph of the organic memories deposited on paper substrate. Reproduced with permission from Ref. [125], Copyright 2017, Wiley–VCH GmbH. g A schematic diagram of the memory with the trilayer dielectric composed of pV3D3 TDL, p(BDDA-co-HEA) CTL, and pBDDA BDL. Characteristics of the p(BDDA-co-HEA) layer. h Memory characteristics of the flexible memory on a PEN substrate under the applied tensile strain of 2.72%. i Retention characteristics depending on fraction of HEA in CTL. Reproduced with permission from Ref. [7], Copyright 2020, Wiley–VCH GmbH

Fig. 7

Reproduced with permission from Ref. [149], Copyright 2020, IEEE. d Schemetic of a 5-layer 3D-stacked OTFT. (e) Cross-sectional SEM images of 3D OTFT, scale bar, 1 μm, and f interconnected metal electrodes, scale bar, 400 μm. g On-current values and on/off current ratio of 5 3D-OTFTs. Reproduced with permission from Ref. [18], Copyright 2019, Springer Nature. h 3-dimensional ternary logic inverter (3D T-inverter) fabrication method, and i circuit schematic. (j) Operating principle when the organic flash memory is programmed, and k corresponding transfer characteristic of the 3D T-inverter. Transient measurement results of 3D T-inverter with l pristine and m programmed states. Reproduced with permission from Ref. [163], Copyright 2022, Springer Nature

Fig. 8

Reproduced with permission from Ref. [169], Copyright 2024, Springer Nature

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Acknowledgements

Sukwon Jang, Youson Kim, and Chungryeol Lee contributed equally to this work. This work was supported by the Technology Innovation Program (1415181712, RS-2022-00144300) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was also supported by the Wearable Platform Materials Technology Center (WMC) funded by the National Research Foundation of Korea (NRF) Grant by the Korean Government (MSIT) (NRF-2022R1A5A6000846). This work was also supported by the Technology development Program (S3207541) funded by the Ministry of SMEs and Startups (MSS, Korea). This work was also supported by Samsung Advanced Institute of Technology (SAIT), SEC. This work was also supported by Samsung Display Co.,Ltd. This work was also supported by Nanomedical Devices Development Project of NNFC 2024.

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Jang, S., Kim, Y., Lee, C. et al. Vapor-Phase Deposited Polymer Dielectric Layers for Organic Electronics: Design, Characteristics, and Applications. Korean J. Chem. Eng. (2024). https://doi.org/10.1007/s11814-024-00210-5

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