Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon†

Mao Wang,

*^a Ye Yu,

*^b Slawomir Prucnal,

^a Yonder Berencén,

^a Mohd Saif Shaikh,

^a Lars Rebohle,

^a Muhammad Bilal Khan,

^a Vitaly Zviagin,^c René Hübner,

^a Alexej Pashkin,

^a Artur Erbe,

^ad Yordan M. Georgiev,

^ae Marius Grundmann,

^c Manfred Helm,^af Robert Kirchner^bd and Shengqiang Zhou

Author affiliations

* Corresponding authors

^a Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany
E-mail: m.wang@hzdr.de

^b Institute of Semiconductors and Microsystems, Technische Universität Dresden, 01062 Dresden, Germany
E-mail: ye.yu@tu-dresden.de

^c Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany

^d Centre for Advancing Electronics Dresden (CfAED), Technische Universität Dresden, 01062 Dresden, Germany

^e Institute of Electronics at the Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria

^f Institut für Angewandte Physik (IAP), Technische Universität Dresden, 01062 Dresden, Germany

Abstract

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior to traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal–oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the on-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.