Showing 1–7 of 7 results for author: Georgiev, Y M

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Authors: Oliver Steuer, Daniel Schwarz, Michael Oehme, Florian Bärwolf, Yu Cheng, Fabian Ganss, René Hübner, René Heller, Shengqiang Zhou, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal

Abstract: Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseud… ▽ More Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseudomorphic growth of Si1-x-yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, X-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4x1019 cm-3. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Authors: Oliver Steuer, Michail Michailow, René Hübner, Krzysztof Pyszniak, Marcin Turek, Ulrich Kentsch, Fabian Ganss, Muhammad Moazzam Khan, Lars Rebohle, Shengqiang Zhou, Joachim Knoch, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal

Abstract: For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band g… ▽ More For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1-x-yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical-mechanical polishing giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1-x-yGeySnx alloys by Sn ion beam implantation into Si1-yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1-yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1-x-yGeySnx with up to 2.3 at.% incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1-yGey films by masking unstructured regions on the chip. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Observation of room temperature gate tunable quantum confinement effect in photodoped junctionless MOSFET

Authors: Biswajit Khan, Abir Mukherjee, Yordan M. Georgiev, J. P. Colinge, Suprovat Ghosh, Samaresh Das

Abstract: In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the tri-gated junctionless MOSFET, enabling modification of the nanowire's potential well profile. In the presence of light, photogenerated electrons accumulate at the cent… ▽ More In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the tri-gated junctionless MOSFET, enabling modification of the nanowire's potential well profile. In the presence of light, photogenerated electrons accumulate at the center of the junctionless nanowire, aligning with the modified potential well profile influenced by gate bias. These carriers at the center are far from interfaces and experience less interfacial noise. Therefore, such clean photo-doping shows clear, repeatable peaks in current for specific gate biases compared to the dark condition, considering different operating drain-to-source voltages at room temperature. We propose that photodoping-induced subband occupation of gate tunable potential well of the nanowire is the underlying phenomenon responsible for this kind of observation. This study reveals experimental findings demonstrating gate-induced switching from semi-classical to the quantum domain, followed by the optical occupancy of electronic sub-bands at room temperature. We developed a compact model based on the Nonequilibrium Green's function formalism to understand this phenomenon in our illuminated device better. This work reveals the survival of the quantum confinement effect at room temperature in such semi-classical transport. △ Less

Submitted 12 March, 2024; originally announced March 2024.

Comments: 12 pages, 6 figures

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Authors: Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou

Abstract: Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the sp… ▽ More Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Comments: 20 pages, 5 figures

Journal ref: Nanoscale 14, 2826-2836 (2022)

CMOS-compatible controlled hyperdoping of silicon nanowires

Authors: Yonder Berencén, Slawomir Prucnal, Wolfhard Möller, René Hübner, Lars Rebohle, Roman Böttger, Markus Glaser, Tommy Schönherr, Ye Yuan, Mao Wang, Yordan M. Georgiev, Artur Erbe, Alois Lugstein, Manfred Helm, Shengqiang Zhou, Wolfgang Skorupa

Abstract: Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for S… ▽ More Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for Si-based short-wavelength infrared photodetectors.[3-5] Intermediate-band nanowires could potentially be used instead of bulk materials to overcome the Shockley-Queisser limit and to improve efficiency in solar cells,[6-9] but fundamental scientific questions in hyperdoping Si nanowires require experimental verification. The development of a method for obtaining controlled hyperdoping levels at the nanoscale concomitant with the electrical activation of dopants is, therefore, vital to understanding these issues. Here, we show a CMOS-compatible technique based on non-equilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude greater than the equilibrium solid solubility. Through the nanoscale spatially controlled implantation of dopants, and a bottom-up template-assisted solid phase recrystallization of the nanowires with the use of millisecond-flash lamp annealing, we form Se-hyperdoped Si/SiO2 core/shell nanowires that have a room-temperature sub-band gap optoelectronic photoresponse when configured as a photoconductor device. △ Less

Submitted 20 February, 2018; originally announced February 2018.

Comments: 21 pages, 4 figures (Main text)

Observation of ultrafast solid-density plasma dynamics using femtosecond X-ray pulses from a free-electron laser

Authors: Thomas Kluge, Melanie Rödel, Josefine Metzkes, Alexander Pelka, Alejandro Laso Garcia, Irene Prencipe, Martin Rehwald, Motoaki Nakatsutsumi, Emma E. McBride, Tommy Schönherr, Marco Garten, Nicholas J. Hartley, Malte Zacharias, Arthur Erbe, Yordan M. Georgiev, Eric Galtier, Inhyuk Nam, Hae Ja Lee, Siegfried Glenzer, Michael Bussmann, Christian Gutt, Karl Zeil, Christian Rödel, Uwe Hübner, Ulrich Schramm , et al. (1 additional authors not shown)

Abstract: The complex physics of the interaction between short pulse high intensity lasers and solids is so far hardly accessible by experiments. As a result of missing experimental capabilities to probe the complex electron dynamics and competing instabilities, this impedes the development of compact laser-based next generation secondary radiation sources, e.g. for tumor therapy [Bulanov2002,ledingham2007]… ▽ More The complex physics of the interaction between short pulse high intensity lasers and solids is so far hardly accessible by experiments. As a result of missing experimental capabilities to probe the complex electron dynamics and competing instabilities, this impedes the development of compact laser-based next generation secondary radiation sources, e.g. for tumor therapy [Bulanov2002,ledingham2007], laboratory-astrophysics [Remington1999,Bulanov2015], and fusion [Tabak2014]. At present, the fundamental plasma dynamics that occur at the nanometer and femtosecond scales during the laser-solid interaction can only be elucidated by simulations. Here we show experimentally that small angle X-ray scattering of femtosecond X-ray free-electron laser pulses facilitates new capabilities for direct in-situ characterization of intense short-pulse laser plasma interaction at solid density that allows simultaneous nanometer spatial and femtosecond temporal resolution, directly verifying numerical simulations of the electron density dynamics during the short pulse high intensity laser irradiation of a solid density target. For laser-driven grating targets, we measure the solid density plasma expansion and observe the generation of a transient grating structure in front of the pre-inscribed grating, due to plasma expansion, which is an hitherto unknown effect. We expect that our results will pave the way for novel time-resolved studies, guiding the development of future laser-driven particle and photon sources from solid targets. △ Less

Submitted 25 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. X 8, 031068 (2018)

A new precision measurement of the α-decay half-life of 190Pt

Authors: Miháy Braun, Yordan M. Georgiev, Tommy Schönherr, Heinrich Wilsenach, Kai Zuber

Abstract: A laboratory measurement of the $α$-decay half-life of $^{190}$Pt has been performed using a low background Frisch grid ionisation chamber. A total amount of 216.60(17) mg of natural platinum has been measured for 75.9 days. The resulting half-life is $(4.97\pm0.16)\times 10^{11}$ years, with a total uncertainty of 3.2%. This number is in good agreement with the half-life obtained using the geolog… ▽ More A laboratory measurement of the $α$-decay half-life of $^{190}$Pt has been performed using a low background Frisch grid ionisation chamber. A total amount of 216.60(17) mg of natural platinum has been measured for 75.9 days. The resulting half-life is $(4.97\pm0.16)\times 10^{11}$ years, with a total uncertainty of 3.2%. This number is in good agreement with the half-life obtained using the geological comparison method. △ Less

Submitted 2 March, 2017; originally announced March 2017.