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On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands
Authors:
Mohd Saif Shaikh,
Shuyu Wen,
Mircea-Traian Catuneanu,
Mao Wang,
Artur Erbe,
Slawomir Prucnal,
Lars Rebohle,
Shengqiang Zhou,
Kambiz Jamshidi,
Manfred Helm,
Yonder Berencén
Abstract:
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wave…
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Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.
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Submitted 2 May, 2023;
originally announced May 2023.
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Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Authors:
Mao Wang,
Ye Yu,
Slawomir Prucnal,
Yonder Berencén,
Mohd Saif Shaikh,
Lars Rebohle,
Muhammad Bilal Khan,
Vitaly Zviagin,
René Hübner,
Alexej Pashkin,
Artur Erbe,
Yordan M. Georgiev,
Marius Grundmann,
Manfred Helm,
Robert Kirchner,
Shengqiang Zhou
Abstract:
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the sp…
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Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.
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Submitted 7 October, 2022;
originally announced October 2022.
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Nonlinear magnon control of atomic spin defects in scalable quantum devices
Authors:
Mauricio Bejarano,
Francisco J. T. Goncalves,
Toni Hache,
Michael Hollenbach,
Christopher Heins,
Tobias Hula,
Lukas Körber,
Jakob Heinze,
Yonder Berencén,
Manfred Helm,
Jürgen Fassbender,
Georgy V. Astakhov,
Helmut Schultheiss
Abstract:
Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance o…
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Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance overlap between the magnonic system and the spin centers. Here we circumvent this challenge by harnessing nonlinear magnon scattering processes in a magnetic vortex to access magnon modes that overlap in frequency with silicon-vacancy ($\textrm{V}_{\mathrm{Si}}$) spin transitions in SiC. Our results offer a route to develop hybrid systems that benefit from marrying the rich nonlinear dynamics of magnons with the advantageous properties of SiC for scalable quantum technologies.
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Submitted 18 August, 2022;
originally announced August 2022.
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Wafer-scale nanofabrication of telecom single-photon emitters in silicon
Authors:
M. Hollenbach,
N. Klingner,
N. S. Jagtap,
L. Bischoff,
C. Fowley,
U. Kentsch,
G. Hlawacek,
A. Erbe,
N. V. Abrosimov,
M. Helm,
Y. Berencén,
G. V. Astakhov
Abstract:
A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been re…
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A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
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Submitted 27 April, 2022;
originally announced April 2022.
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A photonic platform hosting telecom photon emitters in silicon
Authors:
Michael Hollenbach,
Nagesh S. Jagtap,
Ciarán Fowley,
Juan Baratech,
Verónica Guardia-Arce,
Ulrich Kentsch,
Anna Eichler-Volf,
Nikolay V. Abrosimov,
Artur Erbe,
ChaeHo Shin,
Hakseong Kim,
Manfred Helm,
Woo Lee,
Georgy V. Astakhov,
Yonder Berencén
Abstract:
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a…
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Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.
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Submitted 5 December, 2021;
originally announced December 2021.
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Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
Authors:
I. D. Breev,
Z. Shang,
A. V. Poshakinskiy,
H. Singh,
Y. Berencén,
M. Hollenbach,
S. S. Nagalyuk,
E. N. Mokhov,
R. A. Babunts,
P. G. Baranov,
D. Suter,
S. A. Tarasenko,
G. V. Astakhov,
A. N. Anisimov
Abstract:
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coheren…
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Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coherent silicon vacancy spin qubits, a drawback for their practical application is the unfavorable ordering of the electronic levels in the optically excited state. Here, we demonstrate that due to polytypism of SiC, a particular type of silicon vacancy qubits in 6H-SiC possesses an unusual inverted fine structure. This results in the directional emission of light along the hexagonal crystallographic axis, making photon extraction more efficient and integration into photonic structures technologically straightforward. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin-orbit interaction, enabling direct implementation of robust spin-photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pumping mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing.
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Submitted 14 July, 2021;
originally announced July 2021.
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Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping
Authors:
Mao Wang,
Eric García-Hemme,
Yonder Berencén,
René Hübner,
Yufang Xie,
Lars Rebohle,
Chi Xu,
Harald Schneider,
Manfred Helm,
Shengqiang Zhou
Abstract:
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive stu…
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Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room-temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p-n photodiode exhibits a spectral photoresponse up to 5 μm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0-1.9 μm. We also investigate the correlation between the background noise and the sensitivity of the Te-hyperdoped Si photodiode, where the maximum room-temperature specific detectivity is found to be 3.2 x 10^12 cmHz^{1/2}W^{-1} and 9.2 x 10^8 cmHz^{1/2}W^{-1} at 1 μm and 1.55 μm, respectively. This work contributes to pave the way towards establishing a Si-based broadband infrared photonic system operating at room temperature.
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Submitted 30 November, 2020;
originally announced November 2020.
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Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Authors:
Slawomir Prucnal,
Maciej O. Liedke,
Xiaoshuang Wang,
Maik Butterling,
Matthias Posselt,
Joachim Knoch,
Horst Windgassen,
Eric Hirschmann,
Yonder Berencén,
Lars Rebohle,
Mao Wang,
Enrico Napoltani,
Jacopo Frigerio,
Andrea Ballabio,
Giovani Isella,
René Hübner,
Andreas Wagner,
Hartmut Bracht,
Manfred Helm,
Shengqiang Zhou
Abstract:
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concen…
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The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
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Submitted 28 October, 2020;
originally announced October 2020.
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Mapping the stray fields of a nanomagnet using spin qubits in SiC
Authors:
M. Bejarano,
F. J. T. Goncalves,
M. Hollenbach,
T. Hache,
T. Hula,
Y. Berencén,
J. Fassbender,
M. Helm,
G. V. Astakhov,
H. Schultheiss
Abstract:
We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patt…
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We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.
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Submitted 1 September, 2020;
originally announced September 2020.
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Engineering telecom single-photon emitters in silicon for scalable quantum photonics
Authors:
M. Hollenbach,
Y. Berencén,
U. Kentsch,
M. Helm,
G. V. Astakhov
Abstract:
We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the car…
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We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.
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Submitted 21 August, 2020;
originally announced August 2020.
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Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si
Authors:
Mao Wang,
A. Debernardi,
Wenxu Zhang,
Chi Xu,
Ye Yuan,
Yufang Xie,
Y. Berencén,
S. Prucnal,
M. Helm,
Shengqiang Zhou
Abstract:
Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion…
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Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.
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Submitted 15 September, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Local vibrational modes of Si vacancy spin qubits in SiC
Authors:
Z. Shang,
A. Hashemi,
Y. Berencén,
H. -P. Komsa,
P. Erhart,
A. V. Krasheninnikov,
G. V. Astakhov
Abstract:
Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacan…
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Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacancy spin qubits in as-grown 4H-SiC. We apply the resonant microwave field to isolate the contribution from one particular type of defects, the so-called V2 center, and observe the zero-phonon line together with seven equally-separated phonon replicas. Furthermore, we present first-principles calculations of the photoluminescence lineshape, which are in excellent agreement with our experimental data. To boost up the calculation accuracy and decrease the computation time, we extract the force constants using machine learning algorithms. This allows us to identify dominant modes in the lattice vibrations coupled to an excited electron during optical emission in the Si vacancy. The resonance phonon energy of 36 meV and the Debye-Waller factor of about 6% are obtained. We establish experimentally that the activation energy of the optically-induced spin polarization is given by the local vibrational energy. Our findings give insight into the coupling of electronic states to vibrational modes in SiC spin qubits, which is essential to predict their spin, optical, mechanical and thermal properties. The approach described can be applied to a large variety of spin defects with spectrally overlapped contributions in SiC as well as in other 3D and 2D materials.
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Submitted 4 February, 2020; v1 submitted 31 January, 2020;
originally announced February 2020.
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Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Authors:
Slawomir Prucnal,
Yonder Berencén,
Mao Wang,
Jörg Grenzer,
Matthias Voelskow,
Rene Hübner,
Yuji Yamamoto,
Alexander Scheit,
Florian Bärwolf,
Vitaly Zviagin,
Rüdiger Schmidt-Grund,
Marius Grundmann,
Jerzy Żuk,
Marcin Turek,
Andrzej Droździel,
Krzysztof Pyszniak,
Robert Kudrawiec,
Maciej P. Polak,
Lars Rebohle,
Wolfgang Skorupa,
Manfred Helm,
Shengqiang Zhou
Abstract:
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of…
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Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.
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Submitted 7 January, 2019;
originally announced January 2019.
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Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical and optical properties
Authors:
Mao Wang,
R. Hubner,
Chi Xu Yufang Xie,
Y. Berencen,
R. Heller,
L. Rebohle,
M. Helm,
S. Prucnal,
Shengqiang Zhou
Abstract:
Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fabricated hyperdoped Si is of great importance fo…
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Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fabricated hyperdoped Si is of great importance for the device fabrication process involving temperature-dependent steps like ohmic contact formation. Here, we report on the thermal stability of the as-fabricated Te-hyperdoped Si subjected to isochronal furnace anneals from 250 °C to 1200 °C. We demonstrate that Te-hyperdoped Si exhibits thermal stability up to 400 °C with a duration of 10 minutes that even helps to further improve the crystalline quality, the electrical activation of Te dopants and the room-temperature sub-band gap absorption. At higher temperatures, however, Te atoms are found to move out from the substitutional sites with a migration energy of EM = 2.1+/-0.1 eV forming inactive clusters and precipitates that impair the structural, electrical and optical properties. These results provide further insight into the underlying physical state transformation of Te dopants in a metastable compositional regime caused by post-synthesis thermal annealing as well as pave the way for the fabrication of advanced hyperdoped Si-based devices.
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Submitted 4 January, 2019;
originally announced January 2019.
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Breaking the doping limit in silicon by deep impurities
Authors:
Mao Wang,
A. Debernardi,
Y. Berencén,
R. Heller,
Chi Xu,
Ye Yuan,
Yufang Xie,
R. Böttger,
L. Rebohle,
W. Skorupa,
M. Helm,
S. Prucnal,
Shengqiang Zhou
Abstract:
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interst…
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N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics.
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Submitted 1 November, 2018; v1 submitted 17 September, 2018;
originally announced September 2018.
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Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature
Authors:
Mao Wang,
Y. Berencén,
E. García-Hemme,
S. Prucnal,
R. Hübner,
Ye Yuan,
Chi Xu,
L. Rebohle,
R. Böttger,
R. Heller,
H. Schneider,
W. Skorupa,
M. Helm,
Shengqiang Zhou
Abstract:
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed…
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Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature.
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Submitted 4 September, 2018;
originally announced September 2018.
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CMOS-compatible controlled hyperdoping of silicon nanowires
Authors:
Yonder Berencén,
Slawomir Prucnal,
Wolfhard Möller,
René Hübner,
Lars Rebohle,
Roman Böttger,
Markus Glaser,
Tommy Schönherr,
Ye Yuan,
Mao Wang,
Yordan M. Georgiev,
Artur Erbe,
Alois Lugstein,
Manfred Helm,
Shengqiang Zhou,
Wolfgang Skorupa
Abstract:
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for S…
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Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for Si-based short-wavelength infrared photodetectors.[3-5] Intermediate-band nanowires could potentially be used instead of bulk materials to overcome the Shockley-Queisser limit and to improve efficiency in solar cells,[6-9] but fundamental scientific questions in hyperdoping Si nanowires require experimental verification. The development of a method for obtaining controlled hyperdoping levels at the nanoscale concomitant with the electrical activation of dopants is, therefore, vital to understanding these issues. Here, we show a CMOS-compatible technique based on non-equilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude greater than the equilibrium solid solubility. Through the nanoscale spatially controlled implantation of dopants, and a bottom-up template-assisted solid phase recrystallization of the nanowires with the use of millisecond-flash lamp annealing, we form Se-hyperdoped Si/SiO2 core/shell nanowires that have a room-temperature sub-band gap optoelectronic photoresponse when configured as a photoconductor device.
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Submitted 20 February, 2018;
originally announced February 2018.
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Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing
Authors:
F. Liu,
S. Prucnal,
Y. Berencén,
Z. Zhang,
Y. Yuan,
Y. Liu,
R. Heller,
R. Boettger,
L. Rebohle,
W. Skorupa,
M. Helm,
S. Zhou
Abstract:
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical transport measurements reveal an increase of carrier concentration and conductivity with increasing Se concentration. For the semi-insulating sample with Se conce…
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We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical transport measurements reveal an increase of carrier concentration and conductivity with increasing Se concentration. For the semi-insulating sample with Se concentrations below the Mott limit, quantitative analysis of the temperature dependence of conductivity indicates a variable-range hopping mechanism with an exponent of s = 1/2 rather than 1/4, which implies a Coulomb gap at the Fermi level. The observed insulator-to-metal transition is attributed to the formation of an intermediate band in the Se-hyperdoped Si layers.
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Submitted 28 July, 2017;
originally announced July 2017.
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Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides
Authors:
Daniel Navarro-Urrios,
Joan Manel Ramirez,
Nestor E. Capuj,
Yonder Berencen,
Blas Garrido,
Alessandro Tredicucci
Abstract:
We demonstrate the integration of Nd3+ doped Barium-Titanium-Silicate microsphere lasers with a Silicon Nitride photonic platform. Devices with two different geometrical configurations for extracting the laser light to buried waveguides have been fabricated and characterized. The first configuration relies on a standard coupling scheme, where the microspheres are placed over strip waveguides. The…
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We demonstrate the integration of Nd3+ doped Barium-Titanium-Silicate microsphere lasers with a Silicon Nitride photonic platform. Devices with two different geometrical configurations for extracting the laser light to buried waveguides have been fabricated and characterized. The first configuration relies on a standard coupling scheme, where the microspheres are placed over strip waveguides. The second is based on a buried elliptical geometry whose working principle is that of an elliptical mirror. In the latter case, the input of a strip waveguide is placed on one focus of the ellipse, while a lasing microsphere is placed on top of the other focus. The fabricated elliptical geometry (ellipticity=0.9) presents a light collecting capacity that is 50% greater than that of the standard waveguide coupling configuration and could be further improved by increasing the ellipticity. Moreover, since the dimensions of the spheres are much smaller than those of the ellipses, surface planarization is not required. On the contrary, we show that the absence of a planarization step strongly damages the microsphere lasing performance in the standard configuration.
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Submitted 29 June, 2015;
originally announced June 2015.
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Far-field characterization of the thermal dynamics in lasing microspheres
Authors:
J. M. Ramirez,
D. Navarro-Urrios,
N. E. Capuj,
Y. Berencen,
A. Pitanti,
B. Garrido,
A. Tredicucci
Abstract:
This work reports the dynamical thermal behavior of lasing microspheres placed on a dielectric substrate while they are homogeneously heated-up by the top-pump laser used to excite the active medium. The lasing modes are collected in the far-field and their temporal spectral traces show characteristic lifetimes of about 2 ms. The latter values scale with the microsphere radius and are independent…
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This work reports the dynamical thermal behavior of lasing microspheres placed on a dielectric substrate while they are homogeneously heated-up by the top-pump laser used to excite the active medium. The lasing modes are collected in the far-field and their temporal spectral traces show characteristic lifetimes of about 2 ms. The latter values scale with the microsphere radius and are independent of the pump power in the studied range. Finite-Element Method simulations reproduce the experimental results, revealing that the thermal dynamics is dominated by the heat dissipated towards the substrate through the medium surrounding the contact point. The characteristic system scale regarding thermal transport is of few hundreds of nanometers, thus enabling an effective toy model for investigating heat conduction in non-continuum gaseous media and near-field radiative energy transfer.
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Submitted 13 April, 2015;
originally announced April 2015.
