We systematically characterized the twist-angle-dependent electronic and transport properties of twisted bilayer graphene (tBLG) grown via chemical vapor deposition. Parameters such as charge-neutral point voltage, carrier concentration, resistance, and mobility were examined across a wide range of twist angles from 0° to 30°. Our experimental results demonstrated that these parameters exhibited twist-angle-dependent trends corresponding to the moiré period. Notably, high twist angles exceeding 9° displayed practically useful features, including improved mobilities compared to single-layer graphene. Additionally, we found that the doping states and work functions showed weak dependence on the twist angles, a finding corroborated by first-principles calculations.
- Jin Hong Kim
- Seoung-Hun Kang
- Jin Sik Choi