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Praveen Saxena

CEO, Tech Next Lab (P) Ltd - Innovative TNL TCAD Software (Atomistic Scale)

TNL-EpiGrow simulator: Example MBE epitaxy of group IV, IV-IV, III-V, II-VI etc. HgCdTe (MCT) Epitaxial MBE Growth Solution, published in Journal of Electronic Materials . TNL-EpiGrow simulator will surely help to diagnose the formation of various defects, strain etc. The solution to obtain the crystalline MCT film USER can do optimization of MBE process input parameters through simulation. Hit & trail with different substrate options to reduce the cost associated with MCT epitaxy. For more details: https://rdcu.be/dFtco #MBE, #MOVPE, #MOCVD, #MCT, #Narrowbandgap, #Defects, #thinfilm, #Roughness, #LatticeParameter, #Epitaxy, #Growth, #ThinFilm, #HgCdTe, #Infrared, #Detector, #CdTe, #Si, #GaSb, #GaAs, #QuantumWell, #Nanosheet, #Optoelectronics, #Qualcomm, #Huawei, #IMEC, #IBM, #Intel, #Samsung, #WinSemiconductor, #TSMC, #GF, #TEL, #Wafer, #EpiWafer, #Vacancies, #dislocation, #TDD, #Crystalline, #Reactor, #GrowthRate, #Silvaco, #Synopsis, #EPIR, #Teledyne, #NASA, #DARPA, #CEALETI, #IME, #IMRI, #IHPC, #EPIR, #DRDO, #ISRO, #Defence, #NightVision, #Thermal, #Imaging, #IR, #MWIR, #LWIR, #SWIR, #T2SL, #HOT, #SMIC, #IIT, #IISC, #Teledyne, #E2V, #DRS, #LEONARDO, #ShivananthanLab, #IllinoisUniversity, #Meity, #PMO

Defect Analysis of MBE Reactor-Grown HgCdTe on Si, GaAs, GaSb, and CZT Substrates Through the TNL-Epigrow Simulator - Journal of Electronic Materials

Defect Analysis of MBE Reactor-Grown HgCdTe on Si, GaAs, GaSb, and CZT Substrates Through the TNL-Epigrow Simulator - Journal of Electronic Materials

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