Infineon Technologies’ Post

All you need to know about silicon carbide (SiC). Check out the interview with our #InfineonKulim colleagues Malathi with in depth explanation 😎#jomrampwbg

🔌 Silicon Carbide (SiC) Technology: Powering the Future of Efficiency As the world transitions towards sustainable energy and more efficient automotive technology, silicon carbide (SiC) solutions are playing a critical role. Reports suggest that the SiC semiconductor devices market is projected to expand at a CAGR of 23.8% from 2022 to 2030, and the SiC wafer market is expected to reach approximately USD 2949.42 million by 2031. onsemi's NTBG028N170M1 SiC MOSFET, a leading-edge SiC technology, is setting new standards for fast switching at high voltages, making it ideal for the most challenging power electronics systems. If you're looking to integrate SiC technology into your projects, onsemi's innovations could be a game-changer. Curious about how SiC solutions can transform your designs and make them more efficient? Let's connect. I'm here to align you with the resources and expertise to harness these evolving opportunities. #powerelectronics #SiCTechnology #sustainableenergy #electricvehicles #innovation #onsemi

What role does the emphasis on power saving play in the forecasted growth of the #superjunctionMOSFET market? The super junction MOSFET market is poised for substantial growth fueled by rising reliance on #electricalequipment, #machinery, and a growing emphasis on power conservation. Additionally, the market stands to gain from the surge in the adoption of #electricvehicles (EVs). However, hindrances to growth include the intricate fabrication processes associated with super junction MOSFETs. Key Market Players: Toshiba, STMicroelectronics , Vishay Intertechnology, Inc., Infineon Technologies , Fuji Electric Co., Ltd., Alpha & Omega Semiconductor, IceMOS Technology Corporation , Magnachip Semiconductor, 強茂 PANJIT International Inc. Explore the market overview: https://lnkd.in/dDXzibUu #SuperJunctionMOSFET #MarketExpansion #ElectricalEquipment #PowerSaving #ElectricVehicles #MarketOpportunity #FabricationChallenges #ForecastedGrowth

🔥 𝐅𝐑𝐄𝐄 𝐖𝐇𝐈𝐓𝐄𝐏𝐀𝐏𝐄𝐑: 𝐀𝐝𝐯𝐚𝐧𝐜𝐞𝐝 𝐩𝐚𝐜𝐤𝐚𝐠𝐢𝐧𝐠 𝐦𝐚𝐭𝐞𝐫𝐢𝐚𝐥𝐬 𝐟𝐨𝐫 𝐩𝐨𝐰𝐞𝐫 𝐬𝐞𝐦𝐢𝐜𝐨𝐧𝐝𝐮𝐜𝐭𝐨𝐫𝐬 The advancement of electric vehicles drives innovation in #semiconductorpackaging. The industry faces the challenge of developing materials that operate reliably at higher power densities and operating temperatures. With a special focus on #Siliconcarbide (SiC) power semiconductors, this whitepaper highlights materials and technologies that offer excellent heat dissipation and reliability. It explores how improved #thermalmanagement solutions can revolutionize the performance and longevity of semiconductors in the #automotiveindustry and provides an outlook on future requirements in this dynamic sector. 👉 𝐃𝐎𝐖𝐍𝐋𝐎𝐀𝐃 𝐍𝐎𝐖 𝐅𝐎𝐑 𝐅𝐑𝐄𝐄! #semiconductor Resonac Kyogo Komiyama https://lnkd.in/eW29uE_K WP Resonac-20240411

Infineon Announces Next Generation CoolGaN Transistor Families Read More https://lnkd.in/dsZxihzr Infineon Technologies announced two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices which now enable Gallium Nitride (GaN) to be used in voltage classes from 40V to 700V in a broader array of applications that help drive digitalization and decarbonization. These two product families, now expanded with the portfolio that resulted from the GaN Systems acquisition, are manufactured on high performance 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria).  #manufacturing #supplychain #heterojunctiontransistor

According to a 2019 article, gallium oxide (Ga2O3) is not expected to replace silicon carbide (SiC) applications. However, gallium oxide is being considered as a replacement for silicon in power electronic devices. Ga2O3 is a member of the ultra-wide bandgap semiconductor family. It has applications in power electronics, solar blind UV detectors, and gas sensors. The power and high voltage devices segment of the semiconductor gallium oxide market is expected to grow steadily through 2030. SiC is already in use and has many applications, including: Sandblasting injectors, Automotive water pump seals, Bearings, Pump components, Extrusion dies, Converters, Inverters, Power supplies, Battery chargers, Motor control systems.

Electronic Specifier Ltd's Harry Fowle wrote a great piece on gallium nitride (GaN) and how it offers significant advantages over traditional silicon-based semiconductors like increased switching speeds and faster charging. Although GaN design comes with some challenges, its potential is large enough that the GaN power electronics market could exceed $2B by 2025! Traditionally, compound #semiconductor materials like GaN are difficult to manufacture due to crystal defects, but recent experiments with our MST film have shown promising results. I’m hopeful our progress will help unlock GaN’s full potential! https://bit.ly/3V8fsLZ

GaN Systems' 11kW 800V on-board charger reference design helps deliver a 36% higher power density and up to 15% lower bill of materials costs compared to silicon carbide. Head to our YouTube channel to watch the full session of Stephen Coates speaking at SEMICON Taiwan 2023 Power and Opto Semiconductor Forum last month. Link below in the comments. #SEMICONTaiwan #GaN #powersystems

With the popularity of power semiconductors, #SiC is also popular. Is it going to replace #IGBT or #MOSFET? SiC is not a direct replacement for IGBTs and MOSFETs. #semiconductor Silicon carbide is essentially a third-generation semiconductor material and is not equated with power semiconductor devices. The development direction of power semiconductors is high performance, especially now that electric vehicles have put forward increasingly higher requirements for power control efficiency. Traditional diodes, MOSFETs, and IGBTs are basically made of silicon-based (Si) materials, which is the so-called first-generation semiconductor. In order to improve the performance of power devices, we are developing and upgrading semiconductor materials, and SiC has become the first choice. For power chips using silicon carbide, we often only talk about SiC. The complete term should be SiC diodes, SiC MOSFETs, and SiC IGBTs. #EV #BEV #Supplychain

Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si). By growing a GaN epi layer on top of silicon, the existing silicon manufacturing infrastructure can be used eliminating the need for costly specialized production sites and leveraging readily available large diameter silicon wafers at low cost. GaN is used in the production of semiconductor power devices as well as RF components and light-emitting diodes (LEDs). GaN has demonstrated the capability to be the displacement technology for silicon semiconductors in power conversion, RF, and analog applications.