Matthew Robinson

A photovoltaic device includes: a superstrate; a first collector formed on the superstrate; a cross-linked hole transport layer (HTL) formed on the first collector; a perovskite (PVSK) crystal formed on the cross-linked HTL; a diffused interface formed by diffusion of the PVSK into the cross-linked HTL; an electron transport layer (ETL) formed on the PVSK crystal; and a second collector formed on the ETL.

A capacitor includes a first electrode, a second electrode, and a dielectric layer of molecular material disposed between said first and second electrodes. The molecular material is described by the general formula: D.sub.p-(Core)-H.sub.q, where Core is a polarizable conductive anisometric core, having conjugated .pi.-systems, and characterized by a longitudinal axis, D and H are insulating substituents, and p and q are numbers of the D and H substituents accordingly. And Core possesses at… Show more

A capacitor includes a first electrode, a second electrode, and a dielectric layer of molecular material disposed between said first and second electrodes. The molecular material is described by the general formula: D.sub.p-(Core)-H.sub.q, where Core is a polarizable conductive anisometric core, having conjugated .pi.-systems, and characterized by a longitudinal axis, D and H are insulating substituents, and p and q are numbers of the D and H substituents accordingly. And Core possesses at least one dopant group that enhances polarizability. Show less

The present disclosure provides an energy storage cell comprising at least one capacitive energy storage device and a DC-voltage conversion device. The capacitive energy storage device comprises at least one meta-capacitor. The output voltage of the capacitive energy storage device is the input voltage of the DC-voltage conversion device. The present disclosure also provides a capacitive energy storage module and a capacitive energy storage system.

Techniques are described for forming a semiconductor device by fusing a first PVSK layer on a first portion of the device with a second PVSK layer on a second portion of the device. The portions are stacked together so that the PVSK layers face each other. The PVSK layers can be fused by applying heat or light, together with pressure. The fusing can include adding a solvent or a first PVSK component. The first PVSK component can be a material that lowers a melting temperature of the PVSK in the… Show more

Techniques are described for forming a semiconductor device by fusing a first PVSK layer on a first portion of the device with a second PVSK layer on a second portion of the device. The portions are stacked together so that the PVSK layers face each other. The PVSK layers can be fused by applying heat or light, together with pressure. The fusing can include adding a solvent or a first PVSK component. The first PVSK component can be a material that lowers a melting temperature of the PVSK in the PVSK layers to assist in recrystallization of the PVSK. The first PVSK component can be combined with a second PVSK component to form additional PVSK. The PVSK components can be added after the PVSK layers are formed or additives within the PVSK layers. PVSK layers can also be fused without adding any components or solvents. Show less

A photovoltaic cell includes a first conducting layer, a first transport layer in electrical contact with the first conducting layer, and a porous insulating layer in electrical contact with the first transport layer. The photovoltaic cell also includes a porous second transport layer in electrical contact with the porous insulating layer, a second conducting layer in electrical contact with the porous second transport layer, and a perovskite crystal structure disposed in one or more of the… Show more

A photovoltaic cell includes a first conducting layer, a first transport layer in electrical contact with the first conducting layer, and a porous insulating layer in electrical contact with the first transport layer. The photovoltaic cell also includes a porous second transport layer in electrical contact with the porous insulating layer, a second conducting layer in electrical contact with the porous second transport layer, and a perovskite crystal structure disposed in one or more of the porous insulating layer, the porous second transport layer, and the second conducting layer. Show less

The present disclosure provides a coiled capacitor comprising a coil formed by a flexible multilayered tape, and a first terminating electrode (a first contact layer) and a second terminating electrode (a second contact layer) which are located on butts of the coil. The flexible multilayered tape contains the following sequence of layers: first metal layer, a layer of a plastic, second metal layer, a layer of energy storage material. The first metal layer forms ohmic contact with the first… Show more

The present disclosure provides a coiled capacitor comprising a coil formed by a flexible multilayered tape, and a first terminating electrode (a first contact layer) and a second terminating electrode (a second contact layer) which are located on butts of the coil. The flexible multilayered tape contains the following sequence of layers: first metal layer, a layer of a plastic, second metal layer, a layer of energy storage material. The first metal layer forms ohmic contact with the first terminating electrode (the first contact layer) and the second metal layer (the second contact layer) forms ohmic contact with the second terminating electrode. Show less

The present disclosure provides an energy storage system comprising at least one capacitive energy storage device and a DC-voltage conversion device. The capacitive energy storage device comprises at least one metacapacitor. The output voltage of the capacitive energy storage device is the input voltage of the DC-voltage conversion device. The capacitive energy storage system is capable of being charged from a power generation system and/or an electrical grid and discharging energy to a load… Show more

The present disclosure provides an energy storage system comprising at least one capacitive energy storage device and a DC-voltage conversion device. The capacitive energy storage device comprises at least one metacapacitor. The output voltage of the capacitive energy storage device is the input voltage of the DC-voltage conversion device. The capacitive energy storage system is capable of being charged from a power generation system and/or an electrical grid and discharging energy to a load and/or electrical grid. The capacitive energy storage system is configurable to supply external power as an operating power in a first state in which the external power is applied and/or to supply power as the operating power in a second state in which the external power is not applied. Show less

A capacitor based energy storage system (CBESS) and methods of using it are disclosed. The CBESS uses meta-capacitors in its capacitive energy storage devices (CESD) to configure capacitive energy storage cells (CESC), which are used to configure capacitive energy storage modules (CESM) to achieve the CBESS's function as an uninterruptible power supply. The CBESS is connected to a power generation system (PGS), a load, and a power grid. When the grid is in an abnormal state, the CESM is… Show more

A capacitor based energy storage system (CBESS) and methods of using it are disclosed. The CBESS uses meta-capacitors in its capacitive energy storage devices (CESD) to configure capacitive energy storage cells (CESC), which are used to configure capacitive energy storage modules (CESM) to achieve the CBESS's function as an uninterruptible power supply. The CBESS is connected to a power generation system (PGS), a load, and a power grid. When the grid is in an abnormal state, the CESM is simultaneously charged with power from the PGS and used to supply power to the load. If a remaining amount of power of a CESM is less than a predetermined level, the CESM is charged with power from PGS or grid. The CBESS interfaces with a computer system or network to buy or sell electricity to the grid depending on grid electricity cost and CESD charging states. Show less

Methods and articles of manufacture for storage and shipping of nanowires are disclosed. One disclosed method includes: (a) providing a nanowire suspension including nanowires suspended in a liquid; and (b) disposing the nanowire suspension in a container for storage and shipping, where the container is configured to inhibit agglomeration of nanowires from the nanowire suspension

Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, a solar cell is provided that comprises of a substrate, a back electrode formed over the substrate, a p-type semiconductor thin film formed over the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type semiconductor thin film, and a transparent electrode formed over the n-type semiconductor thin film… Show more

Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, a solar cell is provided that comprises of a substrate, a back electrode formed over the substrate, a p-type semiconductor thin film formed over the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type semiconductor thin film, and a transparent electrode formed over the n-type semiconductor thin film. The p-type semiconductor thin film results by processing a dense film formed from a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA, wherein the dense film has a void volume of about 26% or less. The dense film may be a substantially void free film. Show less

Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at… Show more

Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. Show less

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be… Show more

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be deposited on a substrate to form a precursor layer. The precursor material comprising group IB, IIIA, and/or VIA based particles. The bandgap grading material of the alloy may be deposited after depositing the precursor material. The alloy in the grading material may react after the precursor layer has begun to sinter and thus maintains a higher concentration of IIIA material in a portion of the compound film that forms above a portion that sinters first. Show less

Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at… Show more

Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase. Show less

Methods and devices are provided for improved photovoltaic devices. Non-vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer;… Show more

Methods and devices are provided for improved photovoltaic devices. Non-vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer. Show less

Methods and devices are provided for improved photovoltaic devices. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating… Show more

Methods and devices are provided for improved photovoltaic devices. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer. Show less

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for creating solid alloy particles. The method may include providing a first material containing at least one alloy comprising of: a) a group IIIA element, b) at least one group IB, IIIA, and/or VIA element different from the group IIIA element of a), and c) a group IA-based material. The group IA-based material may be included in an amount sufficient so that no… Show more

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for creating solid alloy particles. The method may include providing a first material containing at least one alloy comprising of: a) a group IIIA element, b) at least one group IB, IIIA, and/or VIA element different from the group IIIA element of a), and c) a group IA-based material. The group IA-based material may be included in an amount sufficient so that no liquid phase of the alloy is present in a temperature range between room temperature and a deposition temperature higher than room temperature, wherein the group IIIA element is otherwise liquid in that temperature range. The method may involve formulating a precursor material comprising of: a) particles of the first material and b) particles containing at least one element from one of the following: a group IB element, a group IIIA element, a group VIA element, alloys containing any of the foregoing elements, or combinations thereof. Show less

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or… Show more

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. Show less

A transparent conductor includes a film of a conductive ceramic. Additives are at least partially incorporated into the film. The additives are at least one of electrically conductive and semiconducting, and at least one of the additives has an aspect ratio of at least 3

CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles… Show more

CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s). Show less

A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing… Show more

A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature. Show less

Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much… Show more

Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes is particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase. Show less

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or… Show more

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20.degree. C. and about 200.degree. C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form. Show less

Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at… Show more

Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. Show less

A photovoltaic apparatus may comprise two or more energy transfer layers and an acceptor layer. The energy transfer layers are configured such that excitons formed by absorption of radiation in one energy transfer layer transfer to an adjacent energy transfer layer that is closer to the acceptor layer by a dipole mechanism without the exciton diffusing to an interface between the two energy transfer layers. This can be achieved by appropriately configuring the HOMO and LUMO (or conduction and… Show more

A photovoltaic apparatus may comprise two or more energy transfer layers and an acceptor layer. The energy transfer layers are configured such that excitons formed by absorption of radiation in one energy transfer layer transfer to an adjacent energy transfer layer that is closer to the acceptor layer by a dipole mechanism without the exciton diffusing to an interface between the two energy transfer layers. This can be achieved by appropriately configuring the HOMO and LUMO (or conduction and valence band) levels of the energy transfer layers and the acceptor layer. Show less

CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group 13 and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles… Show more

CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group 13 and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stoichiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s). Show less

A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the Ib, the IIIa, and, optionally, the VIa group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a… Show more

A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the Ib, the IIIa, and, optionally, the VIa group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device. Show less

Electroluminescent compounds, devices and methods for making the foregoing are disclosed, which employ a novel topological strategy for designing amorphous molecular solids suitable for forming thin films in optoelectronic devices. In this approach chromophores are attached to a tetrahdral point of convergence.

Organic films can be annealed by exposure to a solvent vapor. The solvent vapor annealing renders the organic film insoluble even in a solvent of a solution from which it was deposited. This enables deposition of two or more organic films in sequence without having one deposition alter an underlying organic film. Devices can be easily fabricated with organic films annealed in this manner when no other solution processing method is possible.

Spaces in a nanostructure can be filled with an organic material while in the solid state below T.sub.m (without heating) by exposing the organic material to solvent vapor while on or mixed with the nanostructured material. The exposure to solvent vapor results in intimate contact between the organic material and the nanostructured material without having to expose them to possibly detrimental heat to melt in the organic material. Solution processing methods need only to be employed to create… Show more

Spaces in a nanostructure can be filled with an organic material while in the solid state below T.sub.m (without heating) by exposing the organic material to solvent vapor while on or mixed with the nanostructured material. The exposure to solvent vapor results in intimate contact between the organic material and the nanostructured material without having to expose them to possibly detrimental heat to melt in the organic material. Solution processing methods need only to be employed to create bulk films while organic material infiltration can take place in the solid state after depositing the film. Show less