2013
DOI: 10.1002/adma.201304226
|View full text |Cite
|
Sign up to set email alerts
|

An Intrinsically Stretchable Nanowire Photodetector with a Fully Embedded Structure

Abstract: Fabrication of intrinsically stretchable nanowire photodetectors based on fully embedded structures is reported. A lithographic filtration method is used to integrate different functional layers into the photodetectors, which exhibit excellent stretchability up to 100%. The fully embedded structure enables excellent stability against repeated stretching, mechanical scratching, and adhesive forces.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

3
188
1
2

Year Published

2014
2014
2018
2018

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 167 publications
(194 citation statements)
references
References 52 publications
3
188
1
2
Order By: Relevance
“…It is found that the crystallinity, the surface morphology, and the electrical properties of NF can be simply and reliably controlled by the annealing temperature during the fiber spinning. As compared with other state-of-the-art ZnO NF devices, our optimized device exhibits one of the best NF device performance up to now, including a high saturation on current of ≈1.26 × 10 −6 A, a low off current of ≈1.54 × 10 −12 A, and a respectable field-effect electron mobility of ≈0.04 cm 2 a small positive V th of ≈0.9 V as well as a high I on /I off of ≈10 6 . In order to further decrease the operation voltage and enhance the device characteristics, high-κ dielectric of solution processed AlO x thin films, instead of the conventional SiO 2 dielectrics, are employed for the device construction, in which the source/drain voltage can be substantially reduced by 10 times to a range of only 0 to 3 V. Also, the electron mobility can be improved by 10 times to the value of 0.2 cm 2 V −1 s −1 .…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…It is found that the crystallinity, the surface morphology, and the electrical properties of NF can be simply and reliably controlled by the annealing temperature during the fiber spinning. As compared with other state-of-the-art ZnO NF devices, our optimized device exhibits one of the best NF device performance up to now, including a high saturation on current of ≈1.26 × 10 −6 A, a low off current of ≈1.54 × 10 −12 A, and a respectable field-effect electron mobility of ≈0.04 cm 2 a small positive V th of ≈0.9 V as well as a high I on /I off of ≈10 6 . In order to further decrease the operation voltage and enhance the device characteristics, high-κ dielectric of solution processed AlO x thin films, instead of the conventional SiO 2 dielectrics, are employed for the device construction, in which the source/drain voltage can be substantially reduced by 10 times to a range of only 0 to 3 V. Also, the electron mobility can be improved by 10 times to the value of 0.2 cm 2 V −1 s −1 .…”
Section: Discussionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7] Among these 1D nanomaterials, many novel synthesis techniques have then been developed, including chemical vapor deposition (CVD), [8][9][10] hydrothermal methods, [11][12][13] and template-assisted electrodeposition, etc; [14][15][16] however, all of these fabrication schemes come with different process-related disadvantages. For example, CVD has been widely employed for the growth of 1D semiconductor nanostructures, [17,18] in which this technique is still far from being compatible with the large-scale manufacturing platform due to the rather high fabricating cost, rigorous process control, low production throughput, and complicated subsequent device fabrication scheme.…”
mentioning
confidence: 99%
“…The fi rst one involves dispersion of conductive nanomaterials into elastomeric matrices to form stretchable conductors. [43][44][45][46][47][48][49][50] Metal nanowires and carbon nanomaterials have been commonly used as the fi llers. The second approach relies on controlling the growth of the metal fi lm with initial cracks on an elastomer substrate.…”
mentioning
confidence: 99%
“…For wearable photodetectors, various materials such as crumpled graphene-AuNPs, [177] ZnO nanostructures, [82,178,179] rGO/ PVDF-TrFE nanocomposites, [180] MoS 2 /WS 2 heterojunction arrays, [181] Zn 2 SnO 4 NWs, [182] SnO 2 NWs [31,183] were employed for the detection of UV, [31,82,178,179,182,183] infrared (IR), [180] or other light illumination, [177,181] based on the principle that light illumination can excite more electrons into the conduction band generating photocurrent. [31] In particular, a crumpled …”
Section: Wearable Environmental Sensorsmentioning
confidence: 99%