Atomic hydrogen cleaning of GaAs (001): a scanning tunnelling microscopy study
A Khatiri, JM Ripalda, TJ Krzyzewski, GR Bell…�- Surface science, 2004 - Elsevier
Reflection high-energy electron diffraction and scanning tunnelling microscopy have been
used to study the cleaning of the native oxide from an epi-ready GaAs (001) substrate using
thermally cracked atomic hydrogen (AH). Cleaning at 400� C results in the formation of a (2�
4) reconstructed As-terminated surface. A short anneal (5 min) under an As2 flux at 600� C
produces an atomically smooth surface, which is comparable in quality to that obtained after
conventional substrate preparation by thermal oxide removal and prolonged homoepitaxial�…
used to study the cleaning of the native oxide from an epi-ready GaAs (001) substrate using
thermally cracked atomic hydrogen (AH). Cleaning at 400� C results in the formation of a (2�
4) reconstructed As-terminated surface. A short anneal (5 min) under an As2 flux at 600� C
produces an atomically smooth surface, which is comparable in quality to that obtained after
conventional substrate preparation by thermal oxide removal and prolonged homoepitaxial�…