In situ X‐ray diffraction of GaAs/MnSb/Ga (In) As heterostructures
PJ Mousley, CW Burrows, MJ Ashwin…�- …�status solidi (b), 2017 - Wiley Online Library
PJ Mousley, CW Burrows, MJ Ashwin, M Takahasi, T Sasaki, GR Bell
physica status solidi (b), 2017•Wiley Online LibraryWe have investigated the growth by molecular beam epitaxy (MBE) of GaAs on MnSb. MnSb
epilayers on GaAs (111), GaAs (001) and of thickness 50 nm were used as substrates for
GaAs films. The MBE growth of GaAs was monitored in situ using synchrotron X‐ray
diffraction and reflection high energy electron diffraction. We show data on strain relaxation
and growth mode, and discuss the epitaxial relationship between GaAs (001) and MnSb (1
01). Schematic of the molecular beam epitaxy/X‐ray diffraction in situ experiment and typical�…
epilayers on GaAs (111), GaAs (001) and of thickness 50 nm were used as substrates for
GaAs films. The MBE growth of GaAs was monitored in situ using synchrotron X‐ray
diffraction and reflection high energy electron diffraction. We show data on strain relaxation
and growth mode, and discuss the epitaxial relationship between GaAs (001) and MnSb (1
01). Schematic of the molecular beam epitaxy/X‐ray diffraction in situ experiment and typical�…
Abstract
We have investigated the growth by molecular beam epitaxy (MBE) of GaAs on MnSb. MnSb epilayers on GaAs(111), GaAs(001) and of thickness 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored in situ using synchrotron X‐ray diffraction and reflection high energy electron diffraction. We show data on strain relaxation and growth mode, and discuss the epitaxial relationship between GaAs(001) and MnSb(101).
Schematic of the molecular beam epitaxy/X‐ray diffraction in�situ experiment and typical 2D detector data, with GaAs(111) and MnSb(0001) diffraction features.
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