[HTML][HTML] Growth and characterisation of MnSb (0 0 0 1)/InGaAs (1 1 1) A epitaxial films
PJ Mousley, CW Burrows, MJ Ashwin…�- Journal of Crystal�…, 2018 - Elsevier
MnSb layers have been grown on In x Ga 1-x As (1 1 1) A virtual substrates using molecular
beam epitaxy (MBE). The effects of both substrate temperature (T sub) and Sb/Mn beam flux
ratio (J Sb/Mn) were investigated. The surface morphology, layer and interface structural
quality, and magnetic properties have been studied for a 3� 3 grid of T sub and J Sb/Mn
values. Compared to known optimal MBE conditions for MnSb/GaAs (1 1 1)[T sub= 415� C, J
Sb/Mn= 6.5], a lower substrate temperature is required for sharp interface formation when�…
beam epitaxy (MBE). The effects of both substrate temperature (T sub) and Sb/Mn beam flux
ratio (J Sb/Mn) were investigated. The surface morphology, layer and interface structural
quality, and magnetic properties have been studied for a 3� 3 grid of T sub and J Sb/Mn
values. Compared to known optimal MBE conditions for MnSb/GaAs (1 1 1)[T sub= 415� C, J
Sb/Mn= 6.5], a lower substrate temperature is required for sharp interface formation when�…
Data for Growth and characterisation of MnSb (0001)/InGaAs (111) A epitaxial films
P Mousley, CW Burrows, MJ Ashwin, AM S�nchez… - 2018 - wrap.warwick.ac.uk
MnSb layers have been grown on In x Ga 1− x As (111) A virtual substrates using molecular
beam epitaxy (MBE). The effects of both substrate temperature (T sub) and Sb/Mn beam flux
ratio (J Sb/Mn) were investigated. The sur-face morphology, layer and interface structural
quality, and magnetic prop-erties have been studied for a 3� 3 grid of T sub and J Sb/Mn
values. Com-pared to known optimal MBE conditions for MnSb/GaAs (111)[T sub= 415◦ C, J
Sb/Mn= 6.5], a lower substrate temperature is required for sharp interface formation when�…
beam epitaxy (MBE). The effects of both substrate temperature (T sub) and Sb/Mn beam flux
ratio (J Sb/Mn) were investigated. The sur-face morphology, layer and interface structural
quality, and magnetic prop-erties have been studied for a 3� 3 grid of T sub and J Sb/Mn
values. Com-pared to known optimal MBE conditions for MnSb/GaAs (111)[T sub= 415◦ C, J
Sb/Mn= 6.5], a lower substrate temperature is required for sharp interface formation when�…