Application of Ti salicide process on ultra-thin SIMOX wafer
K Azuma, A Kishi, M Tanigawa…�- 1995 IEEE�…, 1995 - ieeexplore.ieee.org
K Azuma, A Kishi, M Tanigawa, S Kaneko, T Naka, A Ishihawa, K Iguchi, K Sakiyama
1995 IEEE International SOI Conference Proceedings, 1995•ieeexplore.ieee.orgFully-depleted, ultra-thin SIMOX/CMOS is a suitable technology to achieve low voltage and
high speed application because of its capability of low Vth operation. However, large
resistivity of diffusion area is an issue. In this paper, a thin salicidation layer was adopted to
decrease the sheet resistivity of the ultra-thin SIMOX layer. Good transistor characteristics
with sheet resistivity less than one tenth of the non-silicided diffusion resistivity were
achieved, and no degradation of the transistor characteristics was observed.
high speed application because of its capability of low Vth operation. However, large
resistivity of diffusion area is an issue. In this paper, a thin salicidation layer was adopted to
decrease the sheet resistivity of the ultra-thin SIMOX layer. Good transistor characteristics
with sheet resistivity less than one tenth of the non-silicided diffusion resistivity were
achieved, and no degradation of the transistor characteristics was observed.
Fully-depleted, ultra-thin SIMOX/CMOS is a suitable technology to achieve low voltage and high speed application because of its capability of low Vth operation. However, large resistivity of diffusion area is an issue. In this paper,a thin salicidation layer was adopted to decrease the sheet resistivity of the ultra-thin SIMOX layer. Good transistor characteristics with sheet resistivity less than one tenth of the non-silicided diffusion resistivity were achieved, and no degradation of the transistor characteristics was observed.
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