Abstract
Two new subvalent bismuth telluroiodides, Bi2TeI and Bi4TeI1.25, were prepared by the gas-phase synthesis. The compositions of these phases were determined by energy-dispersive X-ray spectroscopy. X-ray diffraction study of melt grown Bi2TeI single crystals demonstrated that the compound crystallizes in the monoclinic system (space group C/2m) with the unit cell parameters a = 7.586(1) Å, b = 4.380(1) Å, c = 17.741(3) Å, β = 98.20°. The layered crystal structure of Bi2TeI consists of weakly bonded two dimensional blocks with a stoichiometry of the title compound. The blocks are stacked along the c axis. Each block consists of eight atomic layers alternating in the Te-Bi-I-Bi-Bi-I-Bi-Te order and includes a double layer of bismuth atoms. Based on the results of ab initio quantum-chemical calculations, the title compound is expected to possess a pronounced anisotropy of conductivity.
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Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 1, pp. 86–91, January, 2005.
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Savilov, S.V., Khrustalev, V.N., Kuznetsov, A.N. et al. New subvalent bismuth telluroiodides incorporating Bi2 layers: the crystal and electronic structure of Bi2TeI. Russ Chem Bull 54, 87–92 (2005). https://doi.org/10.1007/s11172-005-0221-8
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DOI: https://doi.org/10.1007/s11172-005-0221-8