Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene
Creators
- 1. 1.State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, P. R. China 2.Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, P.R.China
- 2. 3.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China 4.School of Material Science and Engineering, University of Science and Technology of China, Anhui 230026, China
- 3. 5.Collaborative Innovation Center of Quantum Matter, Beijing 100871, China 6.State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- 4. 3.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- 5. 7.International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- 6. 7.International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China 8.Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- 7. 9.Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
- 8. 10.International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
- 9. 11.Materials Department, University of California, Santa Barbara, CA 93106-5050, USA 12.Department of Physics, The Hongkong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, China
- 10. 7.International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China 8.Beijing Academy of Quantum Information Sciences, Beijing 100193, China 13.Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China 14.Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
Description
Gap opening in a wide-enough doping range, whilst keeping high conductance outside this gapped state, has remained a grand challenge in graphene since decades. Here, we show a unique heterostructure of Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, which enables a surface state in CrOCl under vertical electric fields, and it promotes electron-electron(e-e) interactions in BLG via Coulomb long ranged coupling. Consequently, at the charge neutral, a crossover from single particle insulating behavior to an unconventional correlated insulator is seen, below a critical temperature. The over1 GΩ insulating ground state exists in a widely accessible gate range, and can be switched into a metallic state with an on/off ratio up to 107, by applying an in-plane electric field, heating, or by gating. A logic inverter using such correlated insulator is demonstrated, despite that it works still at low temperature. Our findings of the correlated insulating phase in CrOCl/BLG heterosystem paves the way for future engineering of exotic quantum electronic states in the paradigm of interfacial charge coupling.
Files
BLG-CrOCl Data.zip
Files
(209.5 MB)
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Additional details
Related works
- Is cited by
- Journal article: 10.1038/s41467-023-37769-2 (DOI)