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Pushing the Limits of Broadband and High Frequency Metamaterial Silicon Antireflection Coatings
Authors:
K. P. Coughlin,
J. J. McMahon,
K. T. Crowley,
B. J. Koopman,
K. H. Miller,
S. M. Simon,
E. J. Wollack
Abstract:
Broadband refractive optics realized from high index materials provide compelling design solutions for the next generation of observatories for the Cosmic Microwave Background (CMB), and for sub-millimeter astronomy. In this paper, work is presented which extends the state of the art in silicon lenses with metamaterial antireflection (AR) coatings towards larger bandwidth and higher frequency oper…
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Broadband refractive optics realized from high index materials provide compelling design solutions for the next generation of observatories for the Cosmic Microwave Background (CMB), and for sub-millimeter astronomy. In this paper, work is presented which extends the state of the art in silicon lenses with metamaterial antireflection (AR) coatings towards larger bandwidth and higher frequency operation. Examples presented include octave bandwidth coatings with less than $0.5\%$ reflection, a prototype 4:1 bandwidth coating, and a coating optimized for 1.4 THz. For these coatings the detailed design, fabrication and testing processes are described as well as the inherent performance trade offs.
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Submitted 23 April, 2018;
originally announced April 2018.
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Composite Reflective/Absorptive IR-Blocking Filters Embedded in Metamaterial Antireflection Coated Silicon
Authors:
C. D. Munson,
S. K. Choi,
K. P. Coughlin,
J. J. McMahon,
K. H. Miller,
L. A. Page,
E. J. Wollack
Abstract:
Infrared (IR) blocking filters are crucial for controlling the radiative loading on cryogenic systems and for optimizing the sensitivity of bolometric detectors in the far-IR. We present a new IR filter approach based on a combination of patterned frequency selective structures on silicon and a thin (50 $μ\textrm{m}$ thick) absorptive composite based on powdered reststrahlen absorbing materials. F…
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Infrared (IR) blocking filters are crucial for controlling the radiative loading on cryogenic systems and for optimizing the sensitivity of bolometric detectors in the far-IR. We present a new IR filter approach based on a combination of patterned frequency selective structures on silicon and a thin (50 $μ\textrm{m}$ thick) absorptive composite based on powdered reststrahlen absorbing materials. For a 300 K blackbody, this combination reflects $\sim$50\% of the incoming light and blocks \textgreater 99.8\% of the total power with negligible thermal gradients and excellent low frequency transmission. This allows for a reduction in the IR thermal loading to negligible levels in a single cold filter. These composite filters are fabricated on silicon substrates which provide excellent thermal transport laterally through the filter and ensure that the entire area of the absorptive filter stays near the bath temperature. A metamaterial antireflection coating cut into these substrates reduces in-band reflections to below 1\%, and the in-band absorption of the powder mix is below 1\% for signal bands below 750 GHz. This type of filter can be directly incorporated into silicon refractive optical elements.
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Submitted 27 February, 2017;
originally announced February 2017.
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Deep Reactive Ion Etched Anti-Reflection Coatings for Sub-millimeter Silicon Optics
Authors:
Patricio A. Gallardo,
Brian J. Koopman,
Nicholas Cothard,
Sarah Marie M. Bruno,
German Cortes-Medellin,
Galen Marchetti,
Kevin H. Miller,
Brenna Mockler,
Michael D. Niemack,
Gordon Stacey,
Edward J. Wollack
Abstract:
Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high index of refraction. The high index of refraction of silicon causes a large Fresnel reflectance at the vacuum-silicon interface (up to 30%), which can be reduced w…
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Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high index of refraction. The high index of refraction of silicon causes a large Fresnel reflectance at the vacuum-silicon interface (up to 30%), which can be reduced with an anti-reflection (AR) coating. In this work we report techniques for efficiently AR coating silicon at sub-millimeter wavelengths using Deep Reactive Ion Etching (DRIE) and bonding the coated silicon to another silicon optic. Silicon wafers of 100 mm diameter (1 mm thick) were coated and bonded using the Silicon Direct Bonding technique at high temperature (1100 C). No glue is used in this process. Optical tests using a Fourier Transform Spectrometer (FTS) show sub-percent reflections for a single-layer DRIE AR coating designed for use at 320 microns on a single wafer. Cryogenic (10 K) measurements of a bonded pair of AR-coated wafers also reached sub-percent reflections. A prototype two-layer DRIE AR coating to reduce reflections and increase bandwidth is presented and plans for extending this approach are discussed.
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Submitted 24 October, 2016;
originally announced October 2016.
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A Broadband Micro-machined Far-Infrared Absorber
Authors:
Edward J. Wollack,
Aaron M. Datesman,
Christine A. Jhabvala,
Kevin H. Miller,
Manuel A. Quijada
Abstract:
The experimental investigation of a broadband far-infrared meta-material absorber is described. The observed absorptance is $>\,0.95$ from ${\rm 1-20\,THz}$ (${\rm 300-15\,μm}$) over a temperature range spanning ${\rm 5-300\,K}$. The meta-material, realized from an array of tapers ${\rm \approx 100\,μm}$ in length, is largely insensitive to the detailed geometry of these elements and is cryogenica…
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The experimental investigation of a broadband far-infrared meta-material absorber is described. The observed absorptance is $>\,0.95$ from ${\rm 1-20\,THz}$ (${\rm 300-15\,μm}$) over a temperature range spanning ${\rm 5-300\,K}$. The meta-material, realized from an array of tapers ${\rm \approx 100\,μm}$ in length, is largely insensitive to the detailed geometry of these elements and is cryogenically compatible with silicon-based micro-machined technologies. The electromagnetic response is in general agreement with a physically motivated transmission line model.
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Submitted 2 May, 2016; v1 submitted 13 April, 2016;
originally announced April 2016.
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Infrared dielectric properties of low-stress silicon oxide
Authors:
Giuseppe Cataldo,
Edward J. Wollack,
Ari D. Brown,
Kevin H. Miller
Abstract:
Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric fu…
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Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.
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Submitted 15 March, 2016;
originally announced March 2016.