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Curved detectors for future X-ray astrophysics missions
Authors:
Eric D. Miller,
James A. Gregory,
Marshall W. Bautz,
Harry R. Clark,
Michael Cooper,
Kevan Donlon,
Richard F. Foster,
Catherine E. Grant,
Mallory Jensen,
Beverly LaMarr,
Renee Lambert,
Christopher Leitz,
Andrew Malonis,
Mo Neak,
Gregory Prigozhin,
Kevin Ryu,
Benjamin Schneider,
Keith Warner,
Douglas J. Young,
William W. Zhang
Abstract:
Future X-ray astrophysics missions will survey large areas of the sky with unparalleled sensitivity, enabled by lightweight, high-resolution optics. These optics inherently produce curved focal surfaces with radii as small as 2 m, requiring a large area detector system that closely conforms to the curved focal surface. We have embarked on a project using a curved charge-coupled device (CCD) detect…
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Future X-ray astrophysics missions will survey large areas of the sky with unparalleled sensitivity, enabled by lightweight, high-resolution optics. These optics inherently produce curved focal surfaces with radii as small as 2 m, requiring a large area detector system that closely conforms to the curved focal surface. We have embarked on a project using a curved charge-coupled device (CCD) detector technology developed at MIT Lincoln Laboratory to provide large-format, curved detectors for such missions, improving performance and simplifying design. We present the current status of this work, which aims to curve back-illuminated, large-format (5 cm x 4 cm) CCDs to 2.5-m radius and confirm X-ray performance. We detail the design of fixtures and the curving process, and present intial results on curving bare silicon samples and monitor devices and characterizing the surface geometric accuracy. The tests meet our accuracy requirement of <5 $μ$m RMS surface non-conformance for samples of similar thickness to the functional detectors. We finally show X-ray performance measurements of planar CCDs that will serve as a baseline to evaluate the curved detectors. The detectors exhibit low noise, good charge-transfer efficiency, and excellent, uniform spectroscopic performance, including in the important soft X-ray band.
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Submitted 26 June, 2024;
originally announced June 2024.
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Achieving Single-Electron Sensitivity at Enhanced Speed in Fully-Depleted CCDs with Double-Gate MOSFETs
Authors:
Miguel Sofo-Haro,
Kevan Donlon,
Juan Estrada,
Steve Holland,
Farah Fahim,
Chris Leitz
Abstract:
We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer efficiency. The junction coupling between the CCD and MOSFET channels has enabled high sensitivity, demonstrating sub-electron readout noise in one pixel charg…
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We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer efficiency. The junction coupling between the CCD and MOSFET channels has enabled high sensitivity, demonstrating sub-electron readout noise in one pixel charge measurement. We have also demonstrated the non-destructive readout capability of the device. Achieving single-electron and single-photon per pixel counting in the entire CCD pixel array has been made possible through the averaging of a small number of samples. We have demonstrated fully-depleted CCD readout with better performance than the floating diffusion and floating gate amplifiers available today, in both single and multisampling regimes, boasting at least six times the speed of floating gate amplifiers.
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Submitted 20 October, 2023;
originally announced October 2023.
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The high-speed X-ray camera on AXIS
Authors:
Eric D. Miller,
Marshall W. Bautz,
Catherine E. Grant,
Richard F. Foster,
Beverly LaMarr,
Andrew Malonis,
Gregory Prigozhin,
Benjamin Schneider,
Christopher Leitz,
Sven Herrmann,
Steven W. Allen,
Tanmoy Chattopadhyay,
Peter Orel,
R. Glenn Morris,
Haley Stueber,
Abraham D. Falcone,
Andrew Ptak,
Christopher Reynolds
Abstract:
AXIS is a Probe-class mission concept that will provide high-throughput, high-spatial-resolution X-ray spectral imaging, enabling transformative studies of high-energy astrophysical phenomena. To take advantage of the advanced optics and avoid photon pile-up, the AXIS focal plane requires detectors with readout rates at least 20 times faster than previous soft X-ray imaging spectrometers flying ab…
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AXIS is a Probe-class mission concept that will provide high-throughput, high-spatial-resolution X-ray spectral imaging, enabling transformative studies of high-energy astrophysical phenomena. To take advantage of the advanced optics and avoid photon pile-up, the AXIS focal plane requires detectors with readout rates at least 20 times faster than previous soft X-ray imaging spectrometers flying aboard missions such as Chandra and Suzaku, while retaining the low noise, excellent spectral performance, and low power requirements of those instruments. We present the design of the AXIS high-speed X-ray camera, which baselines large-format MIT Lincoln Laboratory CCDs employing low-noise pJFET output amplifiers and a single-layer polysilicon gate structure that allows fast, low-power clocking. These detectors are combined with an integrated high-speed, low-noise ASIC readout chip from Stanford University that provides better performance than conventional discrete solutions at a fraction of their power consumption and footprint. Our complementary front-end electronics concept employs state of the art digital video waveform capture and advanced signal processing to deliver low noise at high speed. We review the current performance of this technology, highlighting recent improvements on prototype devices that achieve excellent noise characteristics at the required readout rate. We present measurements of the CCD spectral response across the AXIS energy band, augmenting lab measurements with detector simulations that help us understand sources of charge loss and evaluate the quality of the CCD backside passivation technique. We show that our technology is on a path that will meet our requirements and enable AXIS to achieve world-class science.
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Submitted 1 September, 2023;
originally announced September 2023.
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Demonstrating repetitive non-destructive readout (RNDR) with SiSeRO devices
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Peter Orel,
Kevan Donlon,
Gregory Prigozhin,
R. Glenn Morris,
Michael Cooper,
Beverly LaMarr,
Andrew Malonis,
Steven W. Allen,
Marshall W. Bautz,
Chris Leitz
Abstract:
We demonstrate so-called repetitive non-destructive readout (RNDR) for the first time on a Single electron Sensitive Readout (SiSeRO) device. SiSeRO is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors, developed at MIT Lincoln Laboratory. This technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor…
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We demonstrate so-called repetitive non-destructive readout (RNDR) for the first time on a Single electron Sensitive Readout (SiSeRO) device. SiSeRO is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors, developed at MIT Lincoln Laboratory. This technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. RNDR was realized by transferring the signal charge non-destructively between the internal gate and the summing well (SW), which is the last serial register. The advantage of the non-destructive charge transfer is that the signal charge for each pixel can be measured at the end of each transfer cycle and by averaging for a large number of measurements ($\mathrm{N_{cycle}}$), the total noise can be reduced by a factor of 1/$\mathrm{\sqrt{N_{cycle}}}$. In our experiments with a prototype SiSeRO device, we implemented nine ($\mathrm{N_{cycle}}$ = 9) RNDR cycles, achieving around 2 electron readout noise (equivalent noise charge or ENC) with spectral resolution close to the fano limit for silicon at 5.9 keV. These first results are extremely encouraging, demonstrating successful implementation of the RNDR technique in SiSeROs. They also lay foundation for future experiments with more optimized test stands (better temperature control, larger number of RNDR cycles, RNDR-optimized SiSeRO devices) which should be capable of achieving sub-electron noise sensitivities. This new device class presents an exciting technology for next generation astronomical X-ray telescopes requiring very low-noise spectroscopic imagers. The sub-electron sensitivity also adds the capability to conduct in-situ absolute calibration, enabling unprecedented characterization of the low energy instrument response.
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Submitted 12 December, 2023; v1 submitted 3 May, 2023;
originally announced May 2023.
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Improved noise performance from the next-generation buried-channel p-Mosfet SiSeROs
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Matthew Kaplan,
Peter Orel,
Kevan Donlon,
Gregory Prigozhin,
R. Glenn Morris,
Michael Cooper,
Andrew Malonis,
Steven W. Allen,
Marshall W. Bautz,
Chris Leitz
Abstract:
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we…
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The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. In our earlier work, we characterized a number of first prototype SiSeROs with the MOSFET transistor channels at the surface layer. An equivalent noise charge (ENC) of around 15 electrons root mean square (RMS) was obtained. In this work, we examine the first buried-channel SiSeRO. We have achieved substantially improved noise performance of around 4.5 electrons root mean square (RMS) and a full width half maximum (FWHM) energy resolution of 132 eV at 5.9 keV, for a readout speed of 625 kpixel/s. We also discuss how digital filtering techniques can be used to further improve the SiSeRO noise performance. Additional measurements and device simulations will be essential to further mature the SiSeRO technology. This new device class presents an exciting new technology for the next-generation astronomical X-ray telescopes requiring fast, low-noise, radiation-hard megapixel imagers with moderate spectroscopic resolution.
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Submitted 27 April, 2023; v1 submitted 11 February, 2023;
originally announced February 2023.
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Understanding the effects of charge diffusion in next-generation soft X-ray imagers
Authors:
Eric D. Miller,
Gregory Y. Prigozhin,
Beverly J. LaMarr,
Marshall W. Bautz,
Richard F. Foster,
Catherine E. Grant,
Craig S. Lage,
Christopher Leitz,
Andrew Malonis
Abstract:
To take advantage of high-resolution optics sensitive to a broad energy range, future X-ray imaging instruments will require thick detectors with small pixels. This pixel aspect ratio affects spectral response in the soft X-ray band, vital for many science goals, as charge produced by the photon interaction near the entrance window diffuses across multiple pixels by the time it is collected, and i…
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To take advantage of high-resolution optics sensitive to a broad energy range, future X-ray imaging instruments will require thick detectors with small pixels. This pixel aspect ratio affects spectral response in the soft X-ray band, vital for many science goals, as charge produced by the photon interaction near the entrance window diffuses across multiple pixels by the time it is collected, and is potentially lost below the imposed noise threshold. In an effort to understand these subtle but significant effects and inform the design and requirements of future detectors, we present simulations of charge diffusion using a variety of detector characteristics and operational settings, assessing spectral response at a range of X-ray energies. We validate the simulations by comparing the performance to that of real CCD detectors tested in the lab and deployed in space, spanning a range of thickness, pixel size, and other characteristics. The simulations show that while larger pixels, higher bias voltage, and optimal backside passivation improve performance, reducing the readout noise has a dominant effect in all cases. We finally show how high-pixel-aspect-ratio devices present challenges for measuring the backside passivation performance due to the magnitude of other processes that degrade spectral response, and present a method for utilizing the simulations to qualitatively assess this performance. Since compelling science requirements often compete technically with each other (high spatial resolution, soft X-ray response, hard X-ray response), these results can be used to find the proper balance for a future high-spatial-resolution X-ray instrument.
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Submitted 15 August, 2022;
originally announced August 2022.
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X-ray speed reading: enabling fast, low noise readout for next-generation CCDs
Authors:
S. Herrmann,
P. Orel,
T. Chattopadhyay,
R. G. Morris,
G. Prigozhin,
K. Donlon,
R. Foster,
M. Bautz,
S. Allen,
C. Leitz
Abstract:
Current, state-of-the-art CCDs are close to being able to deliver all key performance figures for future strategic X-ray missions except for the required frame rates. Our Stanford group is seeking to close this technology gap through a multi-pronged approach of microelectronics, signal processing and novel detector devices, developed in collaboration with the Massachusetts Institute of Technology…
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Current, state-of-the-art CCDs are close to being able to deliver all key performance figures for future strategic X-ray missions except for the required frame rates. Our Stanford group is seeking to close this technology gap through a multi-pronged approach of microelectronics, signal processing and novel detector devices, developed in collaboration with the Massachusetts Institute of Technology (MIT) and MIT Lincoln Laboratory (MIT-LL). Here we report results from our (integrated) readout electronics development, digital signal processing and novel SiSeRO (Single electron Sensitive Read Out) device characterization.
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Submitted 2 August, 2022;
originally announced August 2022.
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Single electron Sensitive Readout (SiSeRO) X-ray detectors: Technological progress and characterization
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Peter Orel,
R. G. Morris,
Daniel R. Wilkins,
Steven W. Allen,
Gregory Prigozhin,
Beverly LaMarr,
Andrew Malonis,
Richard Foster,
Marshall W. Bautz,
Kevan Donlon,
Michael Cooper,
Christopher Leitz
Abstract:
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have…
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Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. Characterization was performed for a number of prototype sensors with different device architectures, e.g. location of the internal gate, MOSFET polysilicon gate structure, and location of the trough in the internal gate with respect to the source and drain of the MOSFET (the trough is introduced to confine the charge in the internal gate). Using a buried-channel SiSeRO, we have achieved a charge/current conversion gain of >700 pA per electron, an equivalent noise charge (ENC) of around 6 electrons root mean square (RMS), and a full width half maximum (FWHM) of approximately 140 eV at 5.9 keV at a readout speed of 625 Kpixel/s. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the characterization test results of the SiSeRO prototypes. We also discuss the potential to implement Repetitive Non-Destructive Readout (RNDR) with these devices and the preliminary results which can in principle yield sub-electron ENC performance. Additional measurements and detailed device simulations will be essential to mature the SiSeRO technology. However, this new device class presents an exciting technology for next generation astronomical X-ray telescopes requiring fast, low-noise, radiation hard megapixel imagers with moderate spectroscopic resolution.
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Submitted 1 August, 2022;
originally announced August 2022.
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Measurement and simulation of charge diffusion in a small-pixel charge-coupled device
Authors:
Beverly J. LaMarr,
Gregory Y. Prigozhin,
Eric D. Miller,
Carolyn Thayer,
Marshall W. Bautz,
Richard Foster,
Catherine E. Grant,
Andrew Malonis,
Barry E. Burke,
Michael Cooper,
Kevan Donlon,
Christopher Leitz
Abstract:
Future high-resolution imaging X-ray observatories may require detectors with both fine spatial resolution and high quantum efficiency at relatively high X-ray energies (>5keV). A silicon imaging detector meeting these requirements will have a ratio of detector thickness to pixel size of six or more, roughly twice that of legacy imaging sensors. This implies greater diffusion of X-ray charge packe…
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Future high-resolution imaging X-ray observatories may require detectors with both fine spatial resolution and high quantum efficiency at relatively high X-ray energies (>5keV). A silicon imaging detector meeting these requirements will have a ratio of detector thickness to pixel size of six or more, roughly twice that of legacy imaging sensors. This implies greater diffusion of X-ray charge packets. We investigate consequences for sensor performance, reporting charge diffusion measurements in a fully-depleted, 50um thick, back-illuminated CCD with 8um pixels. We are able to measure the size distributions of charge packets produced by 5.9 keV and 1.25 keV X-rays in this device. We find that individual charge packets exhibit a gaussian spatial distribution, and determine the frequency distribution of event widths for a range of internal electric field strength levels. We find a standard deviation for the largest charge packets, which occur near the entrance window, of 3.9um. We show that the shape of the event width distribution provides a clear indicator of full depletion and infer the relationship between event width and interaction depth. We compare measured width distributions to simulations. We compare traditional, 'sum-above-threshold' algorithms for event amplitude determination to 2D gaussian fitting of events and find better spectroscopic performance with the former for 5.9 keV events and comparable results at 1.25 keV. The reasons for this difference are discussed. We point out the importance of read noise driven detection thresholds in spectral resolution, and note that the derived read noise requirements for mission concepts such as AXIS and Lynx may be too lax to meet spectral resolution requirements. While we report measurements made with a CCD, we note that they have implications for the performance of high aspect-ratio silicon active pixel sensors as well.
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Submitted 19 January, 2022;
originally announced January 2022.
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First results on SiSeRO (Single electron Sensitive Read Out) devices -- a new X-ray detector for scientific instrumentation
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Barry Burke,
Kevan Donlon,
Gregory Prigozhin,
R. Glenn Morris,
Peter Orel,
Michael Cooper,
Andrew Malonis,
Dan Wilkins,
Vyshnavi Suntharalingam,
Steven W. Allen,
Marshall Bautz,
Chris Leitz
Abstract:
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a depleted internal gate beneath the p-MOSFET. Charge transferred to the internal gate modulates the source-drain current of the transistor. We have developed a drain cu…
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We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a depleted internal gate beneath the p-MOSFET. Charge transferred to the internal gate modulates the source-drain current of the transistor. We have developed a drain current readout module to characterize the detector. The prototype sensor achieves a charge/current conversion gain of 700 pA per electron, an equivalent noise charge (ENC) of 15 electrons (e-) root mean square (RMS), and a full width half maximum (FWHM) of 230 eV at 5.9 keV. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the first characterization test results of the SiSeRO prototypes. While at present only a proof-of-concept experiment, in the near future we plan to use next generation sensors with improved noise performance and an enhanced readout module. In particular, we are developing a readout module enabling Repetitive Non-Destructive Readout (RNDR) of the charge, which can in principle yield sub-electron ENC performance. With these developments, we eventually plan to build a matrix of SiSeRO amplifiers to develop an active pixel sensor with an on-chip ASIC-based readout system. Such a system, with fast readout speeds and sub-electron noise, could be effectively utilized in scientific applications requiring fast and low-noise spectro-imagers.
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Submitted 9 December, 2021;
originally announced December 2021.
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A Small Satellite Version of a Broad-band Soft X-ray Polarimeter
Authors:
Herman L. Marshall,
Sarah N. T. Heine,
Alan Garner,
Eric M. Gullikson,
H. Moritz Günther,
Christopher Leitz,
Rebecca Masterson,
Eric D. Miller,
William Zhang,
Rozenn Boissay-Malaquin,
Ilaria Caiazzo,
Deepto Chakrabarty,
Rosemary Davidson,
Luigi C. Gallo,
Ralf K. Heilmann,
Jeremy Heyl,
Erin Kara,
Alan Marscher,
Norbert S. Schulz
Abstract:
We describe a new implementation of a broad-band soft X-ray polarimeter, substantially based on a previous design. This implementation, the Pioneer Soft X-ray Polarimeter (PiSoX) is a SmallSat, designed for NASA's call for Astrophysics Pioneers, small missions that could be CubeSats, balloon experiments, or SmallSats. As in the REDSoX Polarimeter, the grating arrangement is designed optimally for…
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We describe a new implementation of a broad-band soft X-ray polarimeter, substantially based on a previous design. This implementation, the Pioneer Soft X-ray Polarimeter (PiSoX) is a SmallSat, designed for NASA's call for Astrophysics Pioneers, small missions that could be CubeSats, balloon experiments, or SmallSats. As in the REDSoX Polarimeter, the grating arrangement is designed optimally for the purpose of polarimetry with broad-band focussing optics by matching the dispersion of the spectrometer channels to laterally graded multilayers (LGMLs). The system can achieve polarization modulation factors over 90%. For PiSoX, the optics are lightweight Si mirrors in a one-bounce parabolic configuration. High efficiency, blazed gratings from opposite sectors are oriented to disperse to a LGML forming a channel covering the wavelength range from 35 to 75 Angstroms (165 - 350 eV). Upon satellite rotation, the intensities of the dispersed spectra, after reflection and polarizing by the LGMLs, give the three Stokes parameters needed to determine a source's linear polarization fraction and orientation. The design can be extended to higher energies as LGMLs are developed further. We describe examples of the potential scientific return from instruments based on this design.
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Submitted 4 December, 2020;
originally announced December 2020.
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Astro2020 Activity, Project of State of the Profession Consideration (APC) White Paper: All-Sky Near Infrared Space Astrometry. State of the Profession Considerations: Development of Scanning NIR Detectors for Astronomy
Authors:
David Hobbs,
Christopher Leitz,
Jo Bartlett,
Ian Hepburn,
Daisuke Kawata,
Mark Cropper,
Ben Mazin,
Anthony Brown,
Valeri Makarov,
Barbara McArthur,
Anna Moore,
Robert Sharp,
James Gilbert,
Erik Høg
Abstract:
Gaia is a revolutionary space mission developed by ESA and is delivering 5 parameter astrometry, photometry and radial velocities over the whole sky with astrometric accuracies down to a few tens of micro-arcseconds. A weakness of Gaia is that it only operates at optical wavelengths. However, much of the Galactic centre and the spiral arm regions, important for certain studies, are obscured by int…
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Gaia is a revolutionary space mission developed by ESA and is delivering 5 parameter astrometry, photometry and radial velocities over the whole sky with astrometric accuracies down to a few tens of micro-arcseconds. A weakness of Gaia is that it only operates at optical wavelengths. However, much of the Galactic centre and the spiral arm regions, important for certain studies, are obscured by interstellar extinction and this makes it difficult for Gaia to deeply probe. This problem can be overcome by switching to the Near Infra-Red (NIR) but this is not possible with silicon CCDs. Additionally, to scan the entire sky and make global absolute parallax measurements the spacecraft must have a constant rotation and this requires the detectors operate in Time Delayed Integration (TDI) mode or similar.
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Submitted 11 July, 2019;
originally announced July 2019.
