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Skipper-in-CMOS: Non-Destructive Readout with Sub-Electron Noise Performance for Pixel Detectors
Authors:
Agustin J. Lapi,
Miguel Sofo-Haro,
Benjamin C. Parpillon,
Adi Birman,
Guillermo Fernandez-Moroni,
Lorenzo Rota,
Fabricio Alcalde Bessia,
Aseem Gupta,
Claudio Chavez Blanco,
Fernando Chierchie,
Julie Segal,
Christopher J. Kenney,
Angelo Dragone,
Shaorui Li,
Davide Braga,
Amos Fenigstein,
Juan Estrada,
Farah Fahim
Abstract:
The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtai…
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The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a 15 x 15 um^2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor's commercial 180 nm CMOS Image Sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep sub-electron noise of 0.15rms e-, demonstrating the charge transfer operation from the pinned photodiode and the single photon counting operation when the sensor is exposed to light. The article also discusses new testing strategies employed for its operation and characterization.
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Submitted 19 February, 2024;
originally announced February 2024.
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Dual-sided Charge-Coupled Devices
Authors:
Javier Tiffenberg,
Daniel Egaña-Ugrinovic,
Miguel Sofo Haro,
Peizhi Du,
Rouven Essig,
Guillermo Fernandez-Moroni,
Sho Uemura
Abstract:
Existing Charge-Coupled Devices (CCDs) operate by detecting either the electrons or holes created in an ionization event. We propose a new type of imager, the Dual-Sided CCD, which collects and measures both charge carriers on opposite sides of the device via a novel dual-buried channel architecture. We show that this dual detection strategy provides exceptional dark-count rejection and enhanced t…
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Existing Charge-Coupled Devices (CCDs) operate by detecting either the electrons or holes created in an ionization event. We propose a new type of imager, the Dual-Sided CCD, which collects and measures both charge carriers on opposite sides of the device via a novel dual-buried channel architecture. We show that this dual detection strategy provides exceptional dark-count rejection and enhanced timing capabilities. These advancements have wide-ranging implications for dark-matter searches, near-IR/optical spectroscopy, and time-domain X-ray astrophysics.
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Submitted 5 June, 2024; v1 submitted 25 July, 2023;
originally announced July 2023.
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The Oscura Experiment
Authors:
Alexis Aguilar-Arevalo,
Fabricio Alcalde Bessia,
Nicolas Avalos,
Daniel Baxter,
Xavier Bertou,
Carla Bonifazi,
Ana Botti,
Mariano Cababie,
Gustavo Cancelo,
Brenda Aurea Cervantes-Vergara,
Nuria Castello-Mor,
Alvaro Chavarria,
Claudio R. Chavez,
Fernando Chierchie,
Juan Manuel De Egea,
Juan Carlos D`Olivo,
Cyrus E. Dreyer,
Alex Drlica-Wagner,
Rouven Essig,
Juan Estrada,
Ezequiel Estrada,
Erez Etzion,
Guillermo Fernandez-Moroni,
Marivi Fernandez-Serra,
Steve Holland
, et al. (19 additional authors not shown)
Abstract:
The Oscura experiment will lead the search for low-mass dark matter particles using a very large array of novel silicon Charge Coupled Devices (CCDs) with a threshold of two electrons and with a total exposure of 30 kg-yr. The R&D effort, which began in FY20, is currently entering the design phase with the goal of being ready to start construction in late 2024. Oscura will have unprecedented sensi…
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The Oscura experiment will lead the search for low-mass dark matter particles using a very large array of novel silicon Charge Coupled Devices (CCDs) with a threshold of two electrons and with a total exposure of 30 kg-yr. The R&D effort, which began in FY20, is currently entering the design phase with the goal of being ready to start construction in late 2024. Oscura will have unprecedented sensitivity to sub-GeV dark matter particles that interact with electrons, probing dark matter-electron scattering for masses down to 500 keV and dark matter being absorbed by electrons for masses down to 1 eV. The Oscura R&D effort has made some significant progress on the main technical challenges of the experiment, of which the most significant are engaging new foundries for the fabrication of the CCD sensors, developing a cold readout solution, and understanding the experimental backgrounds.
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Submitted 23 February, 2022; v1 submitted 21 February, 2022;
originally announced February 2022.
