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Low-Crosstalk, Silicon-Fabricated Optical Waveguides for Laser Delivery to Matter Qubits
Authors:
Clayton L. Craft,
Nicholas J. Barton,
Andrew C. Klug,
Kenneth Scalzi,
Ian Wildemann,
Pramod Asagodu,
Joseph D. Broz,
Nikola L. Porto,
Michael Macalik,
Anthony Rizzo,
Garrett Percevault,
Christopher C. Tison,
A. Matthew Smith,
Michael L. Fanto,
James Schneeloch,
Erin Sheridan,
Dylan Heberle,
Andrew Brownell,
Vijay S. S. Sundaram,
Venkatesh Deenadayalan,
Matthew van Niekerk,
Evan Manfreda-Schulz,
Gregory A. Howland,
Stefan F. Preble,
Daniel Coleman
, et al. (8 additional authors not shown)
Abstract:
Reliable control of quantum information in matter-based qubits requires precisely applied external fields, and unaccounted for spatial cross-talk of these fields between adjacent qubits leads to loss of fidelity. We report a CMOS foundry-produced, micro-fabricated silicon nitride (Si3N4) optical waveguide for addressing a chain of eight, unequally-spaced trapped barium ions with crosstalk compatib…
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Reliable control of quantum information in matter-based qubits requires precisely applied external fields, and unaccounted for spatial cross-talk of these fields between adjacent qubits leads to loss of fidelity. We report a CMOS foundry-produced, micro-fabricated silicon nitride (Si3N4) optical waveguide for addressing a chain of eight, unequally-spaced trapped barium ions with crosstalk compatible with scalable quantum information processing. The crosstalk mitigation techniques incorporated into the chip design result in a reduction of the measured optical field by at least 50.8(1.3) dB between adjacent waveguide outputs near 650 nm and similar behavior for devices designed for 493 nm and 585 nm. The waveguide outputs near 650 nm, along with a global laser near 493 nm were used to laser-cool a chain of eight barium-138 ions, and a camera imaged the resulting fluorescence at 493 nm.
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Submitted 27 June, 2024; v1 submitted 25 June, 2024;
originally announced June 2024.
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Massively Scalable Wavelength Diverse Integrated Photonic Linear Neuron
Authors:
Matthew van Niekerk,
Anthony Rizzo,
Hector Rubio Rivera,
Gerald Leake,
Daniel Coleman,
Christopher Tison,
Michael Fanto,
Keren Bergman,
Stefan Preble
Abstract:
As computing resource demands continue to escalate in the face of big data, cloud-connectivity and the internet of things, it has become imperative to develop new low-power, scalable architectures. Neuromorphic photonics, or photonic neural networks, have become a feasible solution for the physical implementation of efficient algorithms directly on-chip. This application is primarily due to the li…
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As computing resource demands continue to escalate in the face of big data, cloud-connectivity and the internet of things, it has become imperative to develop new low-power, scalable architectures. Neuromorphic photonics, or photonic neural networks, have become a feasible solution for the physical implementation of efficient algorithms directly on-chip. This application is primarily due to the linear nature of light and the scalability of silicon photonics, specifically leveraging the wide-scale complementary metal-oxide-semiconductor (CMOS) manufacturing infrastructure used to fabricate microelectronics chips. Current neuromorphic photonic implementations stem from two paradigms: wavelength coherent and incoherent. Here, we introduce a novel architecture that supports coherent and incoherent operation to increase the capability and capacity of photonic neural networks with a dramatic reduction in footprint compared to previous demonstrations. As a proof-of-principle, we experimentally demonstrate simple addition and subtraction operations on a foundry-fabricated silicon photonic chip. Additionally, we experimentally validate an on-chip network to predict the logical 2-bit gates AND, OR, and XOR to accuracies of $96.8\%, 99\%,$ and $98.5\%$, respectively. This architecture is compatible with highly wavelength parallel sources, enabling massively scalable photonic neural networks.
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Submitted 25 August, 2022; v1 submitted 11 May, 2022;
originally announced May 2022.
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Two-dimensional extreme skin depth engineering for CMOS photonics
Authors:
Matthew van Niekerk,
Saman Jahani,
Justin Bickford,
Pak Cho,
Stephen Anderson,
Gerald Leake,
Daniel Coleman,
Michael L. Fanto,
Christopher C. Tison,
Gregory A. Howland,
Zubin Jacob,
Stefan F. Preble
Abstract:
Extreme skin depth engineering (e-skid) can be applied to integrated photonics to manipulate the evanescent field of a waveguide. Here we demonstrate that e-skid can be implemented in two directions in order to deterministically engineer the evanescent wave allowing for dense integration with enhanced functionalities. In particular, by increasing the skin depth, we enable the creation of large gap…
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Extreme skin depth engineering (e-skid) can be applied to integrated photonics to manipulate the evanescent field of a waveguide. Here we demonstrate that e-skid can be implemented in two directions in order to deterministically engineer the evanescent wave allowing for dense integration with enhanced functionalities. In particular, by increasing the skin depth, we enable the creation of large gap, bendless directional couplers with large operational bandwidth. Here we experimentally validate two-dimensional e-skid for integrated photonics in a CMOS photonics foundry and demonstrate strong coupling with a gap of 1.44 μm.
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Submitted 9 December, 2020; v1 submitted 28 May, 2020;
originally announced May 2020.
