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On-surface synthesis and characterization of Teranthene and Hexanthene: Ultrashort graphene nanoribbons with mixed armchair and zigzag edges
Authors:
Gabriela Borin Barin,
Marco Di Giovannantonio,
Thorsten G. Lohr,
Shantanu Mishra,
Amogh Kinikar,
Mickael L. Perrin,
Jan Overbeck,
Michel Calame,
Xinliang Feng,
Roman Fasel,
Pascal Ruffieux
Abstract:
Graphene nanoribbons (GNRs) exhibit a broad range of physicochemical properties that critically depend on their width and edge topology. While the chemically stable GNRs with armchair edges (AGNRs) are semiconductors with width-tunable band gap, GNRs with zigzag edges (ZGNRs) host spin-polarized edge states, which renders them interesting for applications in spintronic and quantum technologies. Ho…
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Graphene nanoribbons (GNRs) exhibit a broad range of physicochemical properties that critically depend on their width and edge topology. While the chemically stable GNRs with armchair edges (AGNRs) are semiconductors with width-tunable band gap, GNRs with zigzag edges (ZGNRs) host spin-polarized edge states, which renders them interesting for applications in spintronic and quantum technologies. However, these states significantly increase their reactivity. For GNRs fabricated via on-surface synthesis under ultrahigh vacuum conditions on metal substrates, the expected reactivity of zigzag edges is a serious concern in view of substrate transfer and device integration under ambient conditions, but corresponding investigations are scarce. Using 10-bromo-9,9':10',9''-teranthracene as a precursor, we have thus synthesized hexanthene (HA) and teranthene (TA) as model compounds for ultrashort GNRs with mixed armchair and zigzag edges, characterized their chemical and electronic structure by means of scanning probe methods, and studied their chemical reactivity upon air exposure by Raman spectroscopy. We present a detailed identification of molecular orbitals and vibrational modes, assign their origin to armchair or zigzag edges, and discuss the chemical reactivity of these edges based on characteristic Raman spectral features.
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Submitted 31 July, 2023;
originally announced July 2023.
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Exciton-assisted electron tunneling in van der Waals heterostructures
Authors:
Lujun Wang,
Sotirios Papadopoulos,
Fadil Iyikanat,
Jian Zhang,
Jing Huang,
Kenji Watanabe,
Takashi Taniguchi,
Michel Calame,
Mickael L. Perrin,
F. Javier García de Abajo,
Lukas Novotny
Abstract:
The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons and defect states have been observed in current-to-voltage ($I-V$) measurements. These features can be explained by direct electron-phonon or electron-defect int…
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The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons and defect states have been observed in current-to-voltage ($I-V$) measurements. These features can be explained by direct electron-phonon or electron-defect interactions. Here, we use a novel tunneling process that involves excitons in transition metal dichalcogenides (TMDs). We study tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride (hBN) with an adjacent TMD monolayer and observe prominent resonant features in $I-V$ measurements. These resonances appear at bias voltages that correspond to TMD exciton energies. By placing the TMD outside of the tunneling pathway, we demonstrate that this phonon-exciton mediated tunneling process does not require any charge injection into the TMD. This work demonstrates the appearance of optical modes in electrical transport measurements and introduces a new functionality for optoelectronic devices based on van der Waals materials.
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Submitted 2 March, 2023;
originally announced March 2023.
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Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs
Authors:
Wenhao Huang,
Tathagata Paul,
Kenji Watanabe,
Takashi Taniguchi,
Mickael L. Perrin,
Michel Calame
Abstract:
Electron-electron interactions in graphene are sufficiently strong to induce a correlated and momentum-conserving flow such that charge carriers behave similarly to the Hagen-Poiseuille flow of a classical fluid. In the current work, we investigate the electronic signatures of such a viscous charge flow in high-mobility graphene FETs. In two complementary measurement schemes, we monitor differenti…
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Electron-electron interactions in graphene are sufficiently strong to induce a correlated and momentum-conserving flow such that charge carriers behave similarly to the Hagen-Poiseuille flow of a classical fluid. In the current work, we investigate the electronic signatures of such a viscous charge flow in high-mobility graphene FETs. In two complementary measurement schemes, we monitor differential resistance of graphene for different channel widths and for different effective electron temperatures. By combining both approaches, the presence of viscous effects is verified in a temperature range starting from 178 K and extending up to room temperature. Our experimental findings are supported by finite element calculations of the graphene channel, which also provide design guidelines for device geometries that exhibit increased viscous effects. The presence of viscous effects near room temperature opens up avenues for functional hydrodynamic devices such as geometric rectifiers like a Tesla valve and charge amplifiers based on electronic Venturi effect.
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Submitted 1 November, 2022;
originally announced November 2022.
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Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture
Authors:
Jian Zhang,
Oliver Braun,
Gabriela Borin Barin,
Sara Sangtarash,
Jan Overbeck,
Rimah Darawish,
Michael Stiefel,
Roman Furrer,
Antonis Olziersky,
Klaus Müllen,
Ivan Shorubalko,
Abdalghani H. S. Daaoub,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such…
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Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-gate FET geometry, consisting of an ultra-narrow finger gate and two side gates. We use high-resolution electron-beam lithography (EBL) for defining finger gates as narrow as 12 nm and combine them with graphene electrodes for contacting the GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond patterns, suggesting that the GNRs form QDs that are connected both in series and in parallel. Moreover, we show that the additional gates enable differential tuning of the QDs in the nanojunction, providing the first step towards multi-gate control of GNR-based multi-dot systems.
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Submitted 27 October, 2022; v1 submitted 7 October, 2022;
originally announced October 2022.
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Redox-controlled conductance of polyoxometalate molecular junctions
Authors:
Cécile Huez,
David Guérin,
Stéphane Lenfant,
Florence Volatron,
Michel Calame,
Mickael L. Perrin,
Anna Proust,
Dominique Vuillaume
Abstract:
We demonstrate the reversible in situ photoreduction of molecular junctions of phosphomolybdate [PMo12O40]3- monolayer self-assembled on flat gold electrodes, connected by the tip of a conductive atomic force microscope. The conductance of the one electron reduced [PMo12O40]4- molecular junction is increased by ca. 10, this open-shell state is stable in the junction in air at room temperature. The…
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We demonstrate the reversible in situ photoreduction of molecular junctions of phosphomolybdate [PMo12O40]3- monolayer self-assembled on flat gold electrodes, connected by the tip of a conductive atomic force microscope. The conductance of the one electron reduced [PMo12O40]4- molecular junction is increased by ca. 10, this open-shell state is stable in the junction in air at room temperature. The analysis of a large current-voltage dataset by unsupervised machine learning and clustering algorithms reveals that the electron transport in the pristine phosphomolybdate junctions leads to symmetric current-voltage curves, controlled by the lowest unoccupied molecular orbital (LUMO) at 0.6 - 0.7 eV above the Fermi energy with ca. 25% of the junctions having a better electronic coupling to the electrodes than the main part of the dataset. This analysis also shows that a small fraction (ca. 18% of the dataset) of the molecules is already reduced. The UV light in situ photoreduced phosphomolybdate junctions are systematically featuring slightly asymmetric current - voltage behaviors, which is ascribed to electron transport mediated by the single occupied molecular orbital (SOMO) nearly at resonance with the Fermi energy of the electrode and by a closely located single unoccupied molecular orbital (SUMO) at ca. 0.3 eV above the SOMO with a weak electronic coupling to the electrodes (ca. 50% of the dataset) or at ca. 0.4 eV but with a better electrode coupling (ca. 50% of the dataset). These results shed lights to the electronic properties of reversible switchable redox polyoxometalates, a key point for potential applications in nanoelectronic devices.
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Submitted 20 September, 2022;
originally announced September 2022.
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Ultimately-scaled electrodes for contacting individual atomically-precise graphene nanoribbons
Authors:
Jian Zhang,
Liu Qian,
Gabriela Borin Barin,
Abdalghani H. S. Daaoub,
Peipei Chen,
Klaus Müllen,
Sara Sangtarash,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
Jin Zhang,
Michel Calame,
Mickael L. Perrin
Abstract:
Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting in…
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Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting individual GNRs remains challenging due to their nanometer-sized width and length as well as their high density on the metallic growth substrate. Here, we demonstrate the contacting and electrical characterization of individual GNRs in a multi-gate device architecture using single-walled carbon nanotubes (SWNTs) as ultimately-scaled electrodes. The GNR-SWNT devices exhibit well-defined quantum transport phenomena, including Coulomb blockade, excited states, and Franck-Condon blockade, all characteristics pointing towards the contacting of an individual GNR. Combined with the multi-gate architecture, this contacting method opens a road for the integration of GNRs in quantum devices to exploit their topologically trivial and non-trivial nature.
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Submitted 9 September, 2022;
originally announced September 2022.
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Growth optimization and device integration of narrow-bandgap graphene nanoribbons
Authors:
Gabriela Borin Barin,
Qiang Sun,
Marco Di Giovannantonio,
Cheng-Zhuo Du,
Xiao-Ye Wang,
Juan Pablo Llinas,
Zafer Mutlu,
Yuxuan Lin,
Jan Wilhelm,
Jan Overbeck,
Colin Daniels,
Michael Lamparski,
Hafeesudeen Sahabudeen,
Mickael L. Perrin,
José I. Urgel,
Shantanu Mishra,
Amogh Kinikar,
Roland Widmer,
Samuel Stolz,
Max Bommert,
Carlo Pignedoli,
Xinliang Feng,
Michel Calame,
Klaus Müllen,
Akimitsu Narita
, et al. (4 additional authors not shown)
Abstract:
The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for succe…
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The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.
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Submitted 2 February, 2022;
originally announced February 2022.
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Optimized Graphene Electrodes for contacting Graphene Nanoribbons
Authors:
Oliver Braun,
Jan Overbeck,
Maria El Abbassi,
Silvan Käser,
Roman Furrer,
Antonis Olziersky,
Alexander Flasby,
Gabriela Borin Barin,
Rimah Darawish,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel,
Ivan Shorubalko,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbo…
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Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.
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Submitted 25 February, 2021;
originally announced February 2021.
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Spatially mapping the thermal conductivity of graphene by an opto-thermal method
Authors:
Oliver Braun,
Roman Furrer,
Pascal Butti,
Kishan R. Thodkar,
Ivan Shorubalko,
Ilaria Zardo,
Michel Calame,
Mickael L. Perrin
Abstract:
Mapping the thermal transport properties of materials at the nanoscale is of critical importance for optimizing heat conduction in nanoscale devices. Several methods to determine the thermal conductivity of materials have been developed, most of them yielding an average value across the sample, thereby disregarding the role of local variations. Here, we present a method for the spatially-resolved…
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Mapping the thermal transport properties of materials at the nanoscale is of critical importance for optimizing heat conduction in nanoscale devices. Several methods to determine the thermal conductivity of materials have been developed, most of them yielding an average value across the sample, thereby disregarding the role of local variations. Here, we present a method for the spatially-resolved assessment of the thermal conductivity of suspended graphene by using a combination of confocal Raman thermometry and a finite-element calculations-based fitting procedure. We demonstrate the working principle of our method by extracting the two-dimensional thermal conductivity map of one pristine suspended single-layer graphene sheet and one irradiated using helium ions. Our method paves the way for spatially resolving the thermal conductivity of other types of layered materials. This is particularly relevant for the design and engineering of nanoscale thermal circuits (e.g. thermal diodes).
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Submitted 15 March, 2021; v1 submitted 28 January, 2021;
originally announced January 2021.
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Benchmark and application of unsupervised classification approaches for univariate data
Authors:
Maria El Abbassi,
Jan Overbeck,
Oliver Braun,
Michel Calame,
Herre S. J. van der Zant,
Mickael L. Perrin
Abstract:
Unsupervised machine learning, and in particular data clustering, is a powerful approach for the analysis of datasets and identification of characteristic features occurring throughout a dataset. It is gaining popularity across scientific disciplines and is particularly useful for applications without a priori knowledge of the data structure. Here, we introduce an approach for unsupervised data cl…
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Unsupervised machine learning, and in particular data clustering, is a powerful approach for the analysis of datasets and identification of characteristic features occurring throughout a dataset. It is gaining popularity across scientific disciplines and is particularly useful for applications without a priori knowledge of the data structure. Here, we introduce an approach for unsupervised data classification of any dataset consisting of a series of univariate measurements. It is therefore ideally suited for a wide range of measurement types. We apply it to the field of nanoelectronics and spectroscopy to identify meaningful structures in data sets. We also provide guidelines for the estimation of the optimum number of clusters. In addition, we have performed an extensive benchmark of novel and existing machine learning approaches and observe significant performance differences. Careful selection of the feature space construction method and clustering algorithms for a specific measurement type can therefore greatly improve classification accuracies.
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Submitted 22 March, 2021; v1 submitted 29 April, 2020;
originally announced April 2020.
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A Universal Length-Dependent Vibrational Mode in Graphene Nanoribbons
Authors:
Jan Overbeck,
Gabriela Borin Barin,
Colin Daniels,
Mickael L. Perrin,
Oliver Braun,
Qiang Sun,
Rimah Darawish,
Marta De Luca,
Xiao-Ye Wang,
Tim Dumslaff,
Akimitsu Narita,
Klaus Müllen,
Pascal Ruffieux,
Vincent Meunier,
Roman Fasel,
Michel Calame
Abstract:
Graphene nanoribbons (GNRs) have attracted considerable interest as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited for practical device application and characteriza…
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Graphene nanoribbons (GNRs) have attracted considerable interest as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited for practical device application and characterization. In contrast, Raman spectroscopy is a sensitive method for the characterization of GNRs, in particular for investigating their width and structure. Here, we report on a length-dependent, Raman active low-energy vibrational mode that is present in atomically precise, bottom-up synthesized armchair graphene nanoribbons (AGNRs). Our Raman study demonstrates that this mode is present in all families of AGNRs and provides information on their length. Our spectroscopic findings are corroborated by scanning tunneling microscopy images and supported by first-principles calculations that allow us to attribute this mode to a longitudinal acoustic phonon. Finally, we show that this mode is a sensitive probe for the overall structural integrity of the ribbons and their interaction with technologically relevant substrates.
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Submitted 14 December, 2019;
originally announced December 2019.
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Large Conductance Variations in a Mechanosensitive Single-Molecule Junction
Authors:
Davide Stefani,
Kevin J. Weiland,
Maxim Skripnik,
Chunwei Hsu,
Mickael L. Perrin,
Marcel Mayor,
Fabian Pauly,
Herre S. J. van der Zant
Abstract:
The appealing feature of molecular electronics is the possibility of exploiting functionality built within a single molecule. This functionality can be employed, for example, for sensing or switching purposes. Thus, ideally, the associated conductance changes should be sizable upon application of external stimuli. Here, we show that a molecular spring can be mechanically compressed or elongated to…
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The appealing feature of molecular electronics is the possibility of exploiting functionality built within a single molecule. This functionality can be employed, for example, for sensing or switching purposes. Thus, ideally, the associated conductance changes should be sizable upon application of external stimuli. Here, we show that a molecular spring can be mechanically compressed or elongated to tune its conductance by up to an order of magnitude by controlling the quantum interference between electronic pathways. Oscillations in the conductance occur when the stress built up in the molecule is high enough to allow the anchoring groups to move along the surface in a stick-slip-like fashion. The mechanical control of quantum interference effects and the resulting large change in molecular conductance open the door for applications in, e.g., a minute mechanosensitive sensing device functional at room temperature.
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Submitted 14 August, 2018; v1 submitted 28 April, 2018;
originally announced April 2018.
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Charge Transport through Conjugated Azomethine-based Single Molecules for Optoelectronic Applications
Authors:
Max Koole,
Riccardo Frisenda,
Michiel L. Petrus,
Mickael L. Perrin,
Herre S. J. van der Zant,
Theo J. Dingemans
Abstract:
The single-molecule conductance of a 3-ring, conjugated azomethine was studied using the mechanically controlled breakjunction technique. Charge transport properties are found to be comparable to vinyl-based analogues; findings are supported with density functional calculations. The simple preparation and good transport properties make azomethine-based molecules an attractive class for use in poly…
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The single-molecule conductance of a 3-ring, conjugated azomethine was studied using the mechanically controlled breakjunction technique. Charge transport properties are found to be comparable to vinyl-based analogues; findings are supported with density functional calculations. The simple preparation and good transport properties make azomethine-based molecules an attractive class for use in polymer and single-molecule organic electronics.
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Submitted 17 August, 2016; v1 submitted 18 May, 2016;
originally announced May 2016.
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Image effects in transport at metal-molecule interfaces
Authors:
C. J. O. Verzijl,
J. A. Celis Gil,
M. L. Perrin,
D. Dulić,
H. S. J. van der Zant,
J. M. Thijssen
Abstract:
We present a method for incorporating image-charge effects into the description of charge transport through molecular devices. A simple model allows us to calculate the adjustment of the transport levels, due to the polarization of the electrodes as charge is added to and removed from the molecule. For this, we use the charge distributions of the molecule between two metal electrodes in several ch…
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We present a method for incorporating image-charge effects into the description of charge transport through molecular devices. A simple model allows us to calculate the adjustment of the transport levels, due to the polarization of the electrodes as charge is added to and removed from the molecule. For this, we use the charge distributions of the molecule between two metal electrodes in several charge states, rather than in gas phase, as obtained from a density-functional theory-based transport code. This enables us to efficiently model level shifts and gap renormalization caused by image-charge effects, which are essential for understanding molecular transport experiments. We apply the method to benzene di-amine molecules and compare our results with the standard approach based on gas phase charges. Finally, we give a detailed account of the application of our approach to porphyrin-derivative devices recently studied experimentally by Perrin et al. [Nat. Nanotechnol. 8, 282 (2013)], which demonstrates the importance of accounting for image-charge effects when modeling transport through molecular junctions.
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Submitted 19 November, 2015;
originally announced November 2015.
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Large tunable image-charge effects in single-molecule junctions
Authors:
M. L. Perrin,
C. J. O. Verzijl,
C. A. Martin,
A. J. Shaikh,
R. Eelkema,
J. H. van Esch,
J. M. van Ruitenbeek,
J. M. Thijssen,
H. S. J. van der Zant,
D. Dulić
Abstract:
The characteristics of molecular electronic devices are critically determined by metal-organic interfaces, which influence the arrangement of the orbital levels that participate in charge transport. Studies on self-assembled monolayers (SAMs) show (molecule-dependent) level shifts as well as transport-gap renormalization, suggesting that polarization effects in the metal substrate play a key role…
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The characteristics of molecular electronic devices are critically determined by metal-organic interfaces, which influence the arrangement of the orbital levels that participate in charge transport. Studies on self-assembled monolayers (SAMs) show (molecule-dependent) level shifts as well as transport-gap renormalization, suggesting that polarization effects in the metal substrate play a key role in the level alignment with respect to the metal's Fermi energy. Here, we provide direct evidence for an electrode-induced gap renormalization in single-molecule junctions. We study charge transport in single porphyrin-type molecules using electrically gateable break junctions. In this set-up, the position of the occupied and unoccupied levels can be followed in situ and with simultaneous mechanical control. When increasing the electrode separation, we observe a substantial increase in the transport gap with level shifts as high as several hundreds of meV for displacements of a few ångstroms. Analysis of this large and tunable gap renormalization with image-charge calculations based on atomic charges obtained from density functional theory confirms and clarifies the dominant role of image-charge effects in single-molecule junctions.
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Submitted 17 March, 2014;
originally announced March 2014.
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Current-induced nanogap formation and graphitization in boron-doped diamond films
Authors:
V. Seshan,
C. R. Arroyo,
A. Castellanos-Gomez,
F. Prins,
M. L. Perrin,
S. D. Janssens,
K. Haenen,
M. Nesládek,
E. J. R. Sudhölter,
L. C. P. M. de Smet,
H. S. J. van der Zant,
D. Dulic
Abstract:
A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to 1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the el…
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A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to 1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation.
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Submitted 10 December, 2012;
originally announced December 2012.
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Influence of chemical structure on the stability and the conductance of porphyrin single-molecule junctions
Authors:
Mickael L. Perrin,
Ferry Prins,
Christian A. Martin,
Ahson J. Shaikh,
Rienk Eelkema,
Jan H. van Esch,
Tomas Briza,
Robert Kaplanek,
Vladimir Kral,
Jan M. van Ruitenbeek,
Herre S. J. van der Zant,
Diana Dulić
Abstract:
Porphyrin molecules can form stable single molecule junctions without anchoring groups. Adding thiol end groups and pyridine axial groups yields more stable junctions with an increased spread in low-bias conductance. This is a result of different bridging geometries during breaking, the stability of which is demonstrated in time-dependent conductance measurements. This is in strong contrast with r…
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Porphyrin molecules can form stable single molecule junctions without anchoring groups. Adding thiol end groups and pyridine axial groups yields more stable junctions with an increased spread in low-bias conductance. This is a result of different bridging geometries during breaking, the stability of which is demonstrated in time-dependent conductance measurements. This is in strong contrast with rod like molecules which show one preferential binding geometry.
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Submitted 29 September, 2011;
originally announced September 2011.
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Charge Transport in a Zn-Porphyrin single molecule junction
Authors:
Mickael L. Perrin,
Christian A. Martin,
Ferry Prins,
Ahson J. Shaikh,
Rienk Eelkema,
Jan H. van Esch,
Jan M. van Ruitenbeek,
Herre S. J. van der Zant,
Diana Dulić
Abstract:
We have investigated charge transport in ZnTPPdT-Pyr molecular junctions using the lithographic MCBJ technique at room temperature and cryogenic temperature (6K). We combined low-bias statistical measurements with spectroscopy of the molecular levels using I(V) characteristics. This combination allows us to characterize the transport in a molecular junction in detail. This complex molecule can for…
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We have investigated charge transport in ZnTPPdT-Pyr molecular junctions using the lithographic MCBJ technique at room temperature and cryogenic temperature (6K). We combined low-bias statistical measurements with spectroscopy of the molecular levels using I(V) characteristics. This combination allows us to characterize the transport in a molecular junction in detail. This complex molecule can form different junction configurations, which is observed in trace histograms and in current-voltage (I(V)) measurements. Both methods show that multiple stable single-molecule junction configurations can be obtained by modulating the inter-electrode distance. In addition we demonstrate that different ZnTPPdT-Pyr junction configurations can lead to completely different spectroscopic features with the same conductance values. We show that statistical low-bias conductance measurements should be interpreted with care, and that the combination with I(V) spectroscopy represents an essential tool for a more detailed characterization of the charge transport in a single molecule.
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Submitted 29 September, 2011;
originally announced September 2011.