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Perovskite nanocrystal self-assemblies in 3D hollow templates
Authors:
Etsuki Kobiyama,
Darius Urbonas,
Maryna I. Bodnarchuk,
Gabriele Rainò,
Antonis Olziersky,
Daniele Caimi,
Marilyne Sousa,
Rainer F. Mahrt,
Maksym V. Kovalenko,
Thilo Stöferle
Abstract:
Highly ordered nanocrystal (NC) assemblies, namely superlattices (SLs), have been investigated as novel building blocks of optical and optoelectronic devices due to their unique properties based on interactions among neighboring NCs. In particular, lead halide perovskite NC SLs have attracted significant attention, owing to their extraordinary optical characteristics of individual NCs and collecti…
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Highly ordered nanocrystal (NC) assemblies, namely superlattices (SLs), have been investigated as novel building blocks of optical and optoelectronic devices due to their unique properties based on interactions among neighboring NCs. In particular, lead halide perovskite NC SLs have attracted significant attention, owing to their extraordinary optical characteristics of individual NCs and collective emission processes like superfluorescence (SF). So far, the primary method for preparing perovskite NC SLs has been the drying-mediated self-assembly method, in which the colloidal NCs spontaneously assemble into SLs during solvent evaporation. However, this method lacks controllability because NCs form random-sized SLs at random positions on the substrate rendering NC assemblies in conjunction with device structures such as photonic waveguides or microcavities challenging. Here, we demonstrate template-assisted self-assembly to deterministically place perovskite NC SLs and control their geometrical properties. A solution of CsPbBr3 NCs is drop-casted on a substrate with lithographically-defined hollow structures. After solvent evaporation and removal of excess NCs from the substrate surface, NCs only remain in the templates thereby defining the position and size of these NC assemblies. We performed photoluminescence (PL) measurements on these NC assemblies and observed signatures of SF, similar as in spontaneously assembled SLs. Our findings are crucial for optical devices that harness embedded perovskite NC assemblies and prepare fundamental studies on how these collective effects can be tailored through the SL geometry.
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Submitted 25 June, 2024;
originally announced June 2024.
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Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture
Authors:
Jian Zhang,
Oliver Braun,
Gabriela Borin Barin,
Sara Sangtarash,
Jan Overbeck,
Rimah Darawish,
Michael Stiefel,
Roman Furrer,
Antonis Olziersky,
Klaus Müllen,
Ivan Shorubalko,
Abdalghani H. S. Daaoub,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such…
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Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-gate FET geometry, consisting of an ultra-narrow finger gate and two side gates. We use high-resolution electron-beam lithography (EBL) for defining finger gates as narrow as 12 nm and combine them with graphene electrodes for contacting the GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond patterns, suggesting that the GNRs form QDs that are connected both in series and in parallel. Moreover, we show that the additional gates enable differential tuning of the QDs in the nanojunction, providing the first step towards multi-gate control of GNR-based multi-dot systems.
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Submitted 27 October, 2022; v1 submitted 7 October, 2022;
originally announced October 2022.
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Optimized Graphene Electrodes for contacting Graphene Nanoribbons
Authors:
Oliver Braun,
Jan Overbeck,
Maria El Abbassi,
Silvan Käser,
Roman Furrer,
Antonis Olziersky,
Alexander Flasby,
Gabriela Borin Barin,
Rimah Darawish,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel,
Ivan Shorubalko,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbo…
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Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.
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Submitted 25 February, 2021;
originally announced February 2021.
