Growth optimization and device integration of narrow-bandgap graphene nanoribbons
Authors:
Gabriela Borin Barin,
Qiang Sun,
Marco Di Giovannantonio,
Cheng-Zhuo Du,
Xiao-Ye Wang,
Juan Pablo Llinas,
Zafer Mutlu,
Yuxuan Lin,
Jan Wilhelm,
Jan Overbeck,
Colin Daniels,
Michael Lamparski,
Hafeesudeen Sahabudeen,
Mickael L. Perrin,
José I. Urgel,
Shantanu Mishra,
Amogh Kinikar,
Roland Widmer,
Samuel Stolz,
Max Bommert,
Carlo Pignedoli,
Xinliang Feng,
Michel Calame,
Klaus Müllen,
Akimitsu Narita
, et al. (4 additional authors not shown)
Abstract:
The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for succe…
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The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.
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Submitted 2 February, 2022;
originally announced February 2022.
Scaling and Statistics of Bottom-Up Synthesized Armchair Graphene Nanoribbon Transistors
Authors:
Yuxuan Lin,
Zafer Mutlu,
Gabriela Borin Barin,
Jenny Hong,
Juan Pablo Llinas,
Akimitsu Narita,
Hanuman Singh,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel,
Jeffrey Bokor
Abstract:
Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a st…
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Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy to connect the nanomaterial morphologies and the device performance through a Monte Carlo device model and apply it to understand the scaling trends of bottom-up synthesized armchair graphene nanoribbon (GNR) transistors. A new nanofabrication process is developed for GNR transistors with channel length down to 7 nm. The impacts of the GNR spatial distributions and the device geometries on the device performance are investigated systematically through comparison of experimental data with the model. Through this study, challenges and opportunities of transistor technologies based on bottom-up synthesized GNRs are pinpointed, paving the way to the further improvement of the GNR device performance for future transistor technology nodes.
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Submitted 23 January, 2022;
originally announced January 2022.
