Showing 1–38 of 38 results for author: Lenfant, S

Electronic Properties of Single Prussian Blue Analog Nanocrystals Determined by Conductive-AFM

Authors: Hugo Therssen, Laure Catala, Sandra Mazérat, Talal Mallah, Dominique Vuillaume, Thierry Mélin, Stéphane Lenfant

Abstract: We report a study of the electron transport (ET) properties at the nanoscale (conductive-AFM noted C-AFM thereafter) of individual Prussian Blue Analog (PBA) cubic nanocrystals (NCs) of CsCo(III)Fe(II), with size between 15 and 50 nm deposited on HOPG. We demonstrate that these PBA NCs feature an almost size independent electron injection barriers of 0.41 +/- 0.02 eV and 0.27 +/- 0.03 eV at the Cs… ▽ More We report a study of the electron transport (ET) properties at the nanoscale (conductive-AFM noted C-AFM thereafter) of individual Prussian Blue Analog (PBA) cubic nanocrystals (NCs) of CsCo(III)Fe(II), with size between 15 and 50 nm deposited on HOPG. We demonstrate that these PBA NCs feature an almost size independent electron injection barriers of 0.41 +/- 0.02 eV and 0.27 +/- 0.03 eV at the CsCo(III)Fe(II)/HOPG and CsCo(III)Fe(II)/C-AFM tip, respectively, and an intrinsic electron conductivity evolving from largely dispersed between ca. 5E-4 and 2E-2 S/cm without a clear correlation with the nanocrystal size. The conductivity values measured on individual nanocrystals are higher by up to 5 decades than those reported on PBA films. △ Less

Submitted 31 October, 2023; originally announced November 2023.

Journal ref: Nanoscale 2023

Molecular Junctions for Terahertz Switches and Detectors

Authors: Imen Hnid, Ali Yassin, Imane Arbouch, David Guérin, Colin van Dyck, Lionel Sanginet, Stéphane Lenfant, Jérôme Cornil, Philippe Blanchard, Dominique Vuillaume

Abstract: Molecular electronics targets tiny devices exploiting the electronic properties of the molecular orbitals, which can be tailored and controlled by the chemical structure/conformation of the molecules. Many functional devices have been experimentally demonstrated; however, these devices were operated in the low frequency domain (mainly, dc to MHz). This represents a serious limitation for electroni… ▽ More Molecular electronics targets tiny devices exploiting the electronic properties of the molecular orbitals, which can be tailored and controlled by the chemical structure/conformation of the molecules. Many functional devices have been experimentally demonstrated; however, these devices were operated in the low frequency domain (mainly, dc to MHz). This represents a serious limitation for electronic applications, albeit molecular devices working in the THz regime were theoretically predicted. Here, we experimentally demonstrate molecular THz switches at room temperature. The devices consist of self-assembled monolayers of molecules bearing two conjugated moieties coupled through a non-conjugated linker. These devices exhibit clear negative differential conductance behaviors (peaks in the current-voltage curves), as confirmed by ab initio simulations, which were reversibly suppressed under illumination with a 30 THz wave. We analyze how the THz switching behavior depends on the THz wave properties (power, frequency), and we benchmark that these molecular devices would outperform actual THz detectors. △ Less

Submitted 16 February, 2024; v1 submitted 13 October, 2023; originally announced October 2023.

Comments: Full paper, figures and supporting information

Journal ref: Nanoscale 2024

Redox-controlled conductance of polyoxometalate molecular junctions

Authors: Cécile Huez, David Guérin, Stéphane Lenfant, Florence Volatron, Michel Calame, Mickael L. Perrin, Anna Proust, Dominique Vuillaume

Abstract: We demonstrate the reversible in situ photoreduction of molecular junctions of phosphomolybdate [PMo12O40]3- monolayer self-assembled on flat gold electrodes, connected by the tip of a conductive atomic force microscope. The conductance of the one electron reduced [PMo12O40]4- molecular junction is increased by ca. 10, this open-shell state is stable in the junction in air at room temperature. The… ▽ More We demonstrate the reversible in situ photoreduction of molecular junctions of phosphomolybdate [PMo12O40]3- monolayer self-assembled on flat gold electrodes, connected by the tip of a conductive atomic force microscope. The conductance of the one electron reduced [PMo12O40]4- molecular junction is increased by ca. 10, this open-shell state is stable in the junction in air at room temperature. The analysis of a large current-voltage dataset by unsupervised machine learning and clustering algorithms reveals that the electron transport in the pristine phosphomolybdate junctions leads to symmetric current-voltage curves, controlled by the lowest unoccupied molecular orbital (LUMO) at 0.6 - 0.7 eV above the Fermi energy with ca. 25% of the junctions having a better electronic coupling to the electrodes than the main part of the dataset. This analysis also shows that a small fraction (ca. 18% of the dataset) of the molecules is already reduced. The UV light in situ photoreduced phosphomolybdate junctions are systematically featuring slightly asymmetric current - voltage behaviors, which is ascribed to electron transport mediated by the single occupied molecular orbital (SOMO) nearly at resonance with the Fermi energy of the electrode and by a closely located single unoccupied molecular orbital (SUMO) at ca. 0.3 eV above the SOMO with a weak electronic coupling to the electrodes (ca. 50% of the dataset) or at ca. 0.4 eV but with a better electrode coupling (ca. 50% of the dataset). These results shed lights to the electronic properties of reversible switchable redox polyoxometalates, a key point for potential applications in nanoelectronic devices. △ Less

Submitted 20 September, 2022; originally announced September 2022.

Thermal and electrical cross-plane conductivity at the nanoscale in poly(3,4-ethylenedioxythiophene):trifuoromethanesulfonate thin films

Authors: K. Kondratenko, D. Guerin, X. Wallart, S. Lenfant, D. Vuillaume

Abstract: Cross-plane electrical and thermal transport in thin films of a conducting polymer (poly(3,4-ethylenedioxythiophene), PEDOT) stabilized with trifluoromethanesulfonate (OTf) is investigated in this study. We explore their electrical properties by conductive atomic force microscopy (C-AFM), which reveals the presence of highly conductive nano-domains. Thermal conductivity in cross-plane direction is… ▽ More Cross-plane electrical and thermal transport in thin films of a conducting polymer (poly(3,4-ethylenedioxythiophene), PEDOT) stabilized with trifluoromethanesulfonate (OTf) is investigated in this study. We explore their electrical properties by conductive atomic force microscopy (C-AFM), which reveals the presence of highly conductive nano-domains. Thermal conductivity in cross-plane direction is measured with Null-Point scanning thermal microscopy (NP-SThM): PEDOT:OTf indeed demonstrates non-negligible electronic contribution to the thermal transport. We further investigate the correlation between electrical and thermal conductivity by applying posttreatment: chemical reduction (de-doping) for the purpose of lowering charge carrier concentration and hence, electrical conductivity and acid treatment (over-doping) to increase the latter. From our measurements, we find a vibrational thermal conductivity of 0.34 (+/- 0.04) Wm-1 K-1. From the linear dependence or the electronic contribution of thermal conductivity vs. the electronic conductivity (Widemann-Franz law), we infer a Lorenz number 6 times larger than the classical Sommerfeld value as also observed in many organic materials for in-plane thermal transport. Applying the recently proposed molecular Widemann-Franz law, we deduced a reorganization energy of 0.53 (+/- 0.06) eV. △ Less

Submitted 24 March, 2022; originally announced March 2022.

Journal ref: Nanoscale, Royal Society of Chemistry, 2022, 14 (16), pp.6075-6084

Terphenylthiazole-based self-assembled monolayers on cobalt with high conductance photo-switching ratio for spintronics

Authors: Vladimir Prudkovskiy, Imane Arbouch, Anne Léaustic, Pei Yu, Colin Van Dyck, David Guérin, Stéphane Lenfant, Talal Mallah, Jérôme Cornil, Dominique Vuillaume

Abstract: Two new photo-switchable terphenylthiazoles molecules are synthesized and self-assembled as monolayers on Au and on ferromagnetic Co electrodes. The electron transport properties probed by conductive atomic force microscopy in ultra-high vacuum reveal a conductance of the light-induced closed (c) form larger than for the open (o) form. We report an unprecedented conductance ratio up to 380 between… ▽ More Two new photo-switchable terphenylthiazoles molecules are synthesized and self-assembled as monolayers on Au and on ferromagnetic Co electrodes. The electron transport properties probed by conductive atomic force microscopy in ultra-high vacuum reveal a conductance of the light-induced closed (c) form larger than for the open (o) form. We report an unprecedented conductance ratio up to 380 between the closed and open forms on Co for the molecule with the anchoring group (thiol) on the side of the two N atoms of the thiazole unit. This result is rationalized by Density Functional Theory (DFT) calculations coupled to the Non-Equilibrium Green's function (NEGF) formalism. These calculations show that the high conductance in the closed form is due to a strong electronic coupling between the terphenylthiazole molecules and the Co electrode that manifests by a resonant transmission peak at the Fermi energy of the Co electrode with a large broadening. This behavior is not observed for the same molecules self-assembled on gold electrodes. These high conductance ratios make these Co-based molecular junctions attractive candidates to develop and study switchable molecular spintronic devices. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Comments: Paper and supporting information

Journal ref: Nanoscale, 2022, 14, pp.5725 - 5742

Nanoscale thermal conductivity of Kapton-derived carbonaceous materials

Authors: K. Kondratenko, D. Hourlier, D. Vuillaume, S. Lenfant

Abstract: This study explores the potentialities of Scanning Thermal Microscopy (SThM) technique as a tool for measuring thermal transporting properties of carbon-derived materials issued from thermal conversion of organic polymers, such as the most commonly known polyimide (PI), Kapton. For quantitative measurements, the Null Point SThM (NP-SThM) technique is used in order to avoid unwanted effects as the… ▽ More This study explores the potentialities of Scanning Thermal Microscopy (SThM) technique as a tool for measuring thermal transporting properties of carbon-derived materials issued from thermal conversion of organic polymers, such as the most commonly known polyimide (PI), Kapton. For quantitative measurements, the Null Point SThM (NP-SThM) technique is used in order to avoid unwanted effects as the parasitic heat flows through the air and the probe cantilever. Kapton HN films were pyrolysed in an inert atmosphere at temperatures up to 1200°C to produce carbon-based residues with varying degree of conversion to free sp2 disordered carbon. The thermal conductivity of carbon materials ranges from 0.2 to 2 Wm-1K-1 depending on the temperature of the carbonization process (varied between 500°C and 1200°C). In order to validate the applicability of NP-SThM approach to these materials, the results were compared to those obtained with the three more traditional techniques, namely photo-thermal radiometry, flash laser analysis and micro-Raman thermometry. It was found that NP SThM data are in excellent agreement with previous work using more traditional techniques. We used the NP-SThM technique to differentiate structural heterogeneities or imperfections at the surface of the pyrolysed Kapton on the basis of measured local thermal conductivity. △ Less

Submitted 28 January, 2022; v1 submitted 26 June, 2021; originally announced June 2021.

Journal ref: J. Appl. Phys.2022.131:065102

Conductance Switching of Azobenzene-Based Self-Assembled Monolayers on Cobalt Probed by UHV Conductive-AFM

Authors: Louis Thomas, Imane Arbouch, David Guérin, Xavier Wallart, Colin van Dyck, Thierry Mélin, Jérôme Cornil, Dominique Vuillaume, Stéphane Lenfant

Abstract: We report the formation of self-assembled monolayers of a molecular photoswitch (azobenzene-bithiophene derivative, AzBT) on cobalt via a thiol covalent bond. We study the electrical properties of the molecular junctions formed with the tip of a conductive atomic force microscope under ultra-high vacuum. The statistical analysis of the current-voltage curves shows two distinct states of the molecu… ▽ More We report the formation of self-assembled monolayers of a molecular photoswitch (azobenzene-bithiophene derivative, AzBT) on cobalt via a thiol covalent bond. We study the electrical properties of the molecular junctions formed with the tip of a conductive atomic force microscope under ultra-high vacuum. The statistical analysis of the current-voltage curves shows two distinct states of the molecule conductance, suggesting the coexistence of both the trans and cis azobenzene isomers on the surface. The cis isomer population (trans isomer) increases (decreases) upon UV light irradiation. The situation is reversed under blue light irradiation. The experiments are confronted to first-principle calculations performed on the molecular junctions with the Non-Equilibrium Green's Function formalism combined with Density Functional Theory (NEGF/DFT). The theoretical results consider two different molecular orientations for each isomer. Whereas the orientation does not affect the conductance of the trans isomer, it significantly modulates the conductance of the cis isomer and the resulting conductance ON/OFF ratio of the molecular junction. This helps identifying the molecular orientation at the origin of the observed current differences between the trans and cis forms. The ON state is associated to the trans isomer irrespective of its orientation in the junction, while the OFF state is identified as a cis isomer with its azobenzene moiety folded upward with respect to the bithiophene core. The experimental and calculated ON/OFF conductance ratios have a similar order of magnitude. This conductance ratio seems reasonable to make these Co-AzBT molecular junctions a good test-bed to further explore the relationship between the spin-polarized charge transport, the molecule conformation and the molecule-Co spinterface. △ Less

Submitted 31 March, 2021; originally announced March 2021.

Comments: Full manuscript and supporting information

Journal ref: Nanoscale (2021)

Thermal conductivity of benzothieno-benzothiophene derivatives at the nanoscale

Authors: Magatte N. Gueye, Alexandre Vercouter, Rémy Jouclas, David Guérin, Vincent Lemaur, Guillaume Schweicher, Stéphane Lenfant, Aleandro Antidormi, Yves Geerts, Claudio Melis, Jérôme Cornil, Dominique Vuillaume

Abstract: We study by scanning thermal microscopy the nanoscale thermal conductance of films (40 to 400 nm thick) of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8). We demonstrate that the out-of-plane thermal conductivity is significant along the interlayer direction, larger for BTBT (0.63 +/- 0.12 W m-1 K-1) compared to C8-BTBT-C8 (0.25 +/-… ▽ More We study by scanning thermal microscopy the nanoscale thermal conductance of films (40 to 400 nm thick) of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8). We demonstrate that the out-of-plane thermal conductivity is significant along the interlayer direction, larger for BTBT (0.63 +/- 0.12 W m-1 K-1) compared to C8-BTBT-C8 (0.25 +/- 0.13 W m-1 K-1). These results are supported by molecular dynamics calculations (Approach to Equilibrium Molecular Dynamics method) performed on the corresponding molecular crystals. The calculations point to significant thermal conductivity (3D-like) values along the 3 crystalline directions, with anisotropy factors between the crystalline directions below 1.8 for BTBT and below 2.8 for C8-BTBT-C8, in deep contrast with the charge transport properties featuring a two-dimensional character for these materials. In agreement with the experiments, the calculations yield larger values in BTBT compared to C8-BTBT-C8 (0.6-1.3 W m-1 K-1 versus 0.3-0.7 W m-1 K-1, respectively). The weak thickness dependence of the nanoscale thermal resistance is in agreement with a simple analytical model. △ Less

Submitted 10 February, 2021; originally announced February 2021.

Comments: Nanoscale (2021)

Covalent Grafting of Polyoxometalate Hybrids onto Flat Silicon/Silicon Oxide: Insights from POMs Layers on Oxides

Authors: Maxime Laurans, Kelly Trinh, Kevin Dalla Francesca, Guillaume Izzet, Sandra Alves, Etienne Derat, Vincent Humblot, Olivier Pluchery, Dominique Vuillaume, Stéphane Lenfant, Florence Volatron, Anna Proust

Abstract: Immobilization of polyoxometalates (POMs) onto oxides is relevant to many applications in the fields of catalysis, energy conversion/storage or molecular electronics. Optimization and understanding the molecule/oxide interface is crucial to rationally improve the performance of the final molecular materials. We herein describe the synthesis and covalent grafting of POM hybrids with remote carboxyl… ▽ More Immobilization of polyoxometalates (POMs) onto oxides is relevant to many applications in the fields of catalysis, energy conversion/storage or molecular electronics. Optimization and understanding the molecule/oxide interface is crucial to rationally improve the performance of the final molecular materials. We herein describe the synthesis and covalent grafting of POM hybrids with remote carboxylic acid functions onto flat Si/SiO2 substrates. Special attention has been paid to the characterization of the molecular layer and to the description of the POM anchoring mode at the oxide interface through the use of various characterization techniques, including ellipsometry, AFM, XPS and FTIR. Finally, electron transport properties were probed in a vertical junction configuration and energy level diagrams have been drawn and discussed in relation with the POM molecular electronic features inferred from cyclic-voltammetry, UV-visible absorption spectra and theoretical calculations. The electronic properties of these POM-based molecular junctions are driven by the POM LUMO (d-orbitals) whatever the nature of the tether or the anchoring group. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Comments: Manuscript and supporting information

Journal ref: ACS Applied Materials and Interfaces 12, 48109-48123 (2020)

Long-Range Electron Transport in Prussian Blue Analog Nanocrystals

Authors: Roméo Bonnet, Stéphane Lenfant, Sandra Mazérat, Talal Mallah, Dominique Vuillaume

Abstract: We report electron transport measurements through nano-scale devices consisting of 1 to 3 Prussian blue analog (PBA) nanocrystals connected between two electrodes. We compare two types of cubic nanocrystals, CsCoFe (15 nm) and CsNiCr (6 nm), deposited on highly oriented pyrolytic graphite and contacted by conducting-AFM. The measured currents show an exponential dependence with the length of the P… ▽ More We report electron transport measurements through nano-scale devices consisting of 1 to 3 Prussian blue analog (PBA) nanocrystals connected between two electrodes. We compare two types of cubic nanocrystals, CsCoFe (15 nm) and CsNiCr (6 nm), deposited on highly oriented pyrolytic graphite and contacted by conducting-AFM. The measured currents show an exponential dependence with the length of the PBA nano-device (up to 45 nm), with low decay factors \b{eta}, in the range 0.11 - 0.18 nm-1 and 0.25 - 0.34 nm-1 for the CsCoFe and the CsNiCr nanocrystals, respectively. From the theoretical analysis of the current-voltage curve for the nano-scale device made of a single nanoparticle, we deduce that the electron transport is mediated by the localized d bands at around 0.5 eV from the electrode Fermi energy in the two cases. By comparison with previously reported ab-initio calculations, we tentatively identify the involved orbitals as the filled Fe(II)-t2g d band (HOMO) for CsCoFe and the half-filled Ni(II)-eg d band (SOMO) for CsNiCr. Conductance values measured for multi-nanoparticle nano-scale devices (2 and 3 nanocrystals between the electrodes) are consistent with a multi-step coherent tunneling in the off-resonance regime between adjacent PBAs, a simple model gives a strong coupling (around 0.1 - 0.25 eV) between the adjacent PBA nanocrystals, mediated by electrostatic interactions. △ Less

Submitted 1 October, 2020; originally announced October 2020.

Electrical molecular switch addressed by chemical stimuli

Authors: H. Audi, Y. Viero, N. Alwhaibi, Z. Chen, M. Iazykov, A. Heynderickx, F. Xiao, D. Guerin, C Krzeminski, I. M. Grace, C. J. Lambert, O. Siri, D. Vuillaume, S Lenfant, H. Klein

Abstract: We demonstrate that the conductance switching of benzo-bis(imidazole) molecules upon protonation depends on the lateral functional groups. The protonated H-substituted molecule shows a higher conductance than the neutral one (Gpro>Gneu), while the opposite (Gneu>Gpro) is observed for a molecule laterally functionalized by amino-phenyl groups. These results are demonstrated at various scale lengths… ▽ More We demonstrate that the conductance switching of benzo-bis(imidazole) molecules upon protonation depends on the lateral functional groups. The protonated H-substituted molecule shows a higher conductance than the neutral one (Gpro>Gneu), while the opposite (Gneu>Gpro) is observed for a molecule laterally functionalized by amino-phenyl groups. These results are demonstrated at various scale lengths : self-assembled monolayer, tiny nanodot-molecule junction and single molecules. From ab-initio theoretical calculations, we conclude that for the H-substituted molecule, the result Gpro>Gneu is correctly explained by a reduction of the LUMO-HOMO gap, while for the amino-phenyl functionnalized molecule, the result Gneu>Gpro is consistent with a shift of HOMO, which reduces the density of states at the Fermi energy. △ Less

Submitted 30 April, 2020; originally announced May 2020.

Comments: Full paper and supporting information

Conductance switching at the nanoscale of diarylethene derivatives self-assembled monolayers on La$_{0.7}$Sr$_{0.3}$MnO$_3$

Authors: L. Thomas, D. Guerin, B. Quinard, E. Jacquet, R. Mattana, P. Seneor, D. Vuillaume, T. Melin, S. Lenfant

Abstract: We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La0.7Sr0.3MnO3 (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements sh… ▽ More We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La0.7Sr0.3MnO3 (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements show that the electrical conductance of LSMO/DDA is about 3 decades below that of the bare LSMO substrate. Moreover, the presence of the DDA SAM suppresses the known conductance switching of the LSMO substrate that is induced by mechanical and/or bias constraints during C-AFM measurements. A partial light-induced conductance switching between the open and closed forms of the DDA is observed for the LSMO/DDA/C-AFM tip molecular junctions (closed/open conductance ratio of about 8). We show that, in the case of long-time exposition to UV light, this feature can be masked by a non-reversible decrease (a factor of about 15) of the conductance of the LSMO electrode. △ Less

Submitted 21 March, 2020; originally announced March 2020.

Comments: Full paper with supporting information

Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticles-polythiophene hybrid materials

Authors: T. Zhang, D. Guérin, F. Alibart, D. Troadec, D. Hourlier, G. Patriarche, A. Yassin, M. Oçafrain, P. Blanchard, J. Roncali, D. Vuillaume, K. Lmimouni, S. Lenfant

Abstract: Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked memory structures, but the analysis remains indirect and needs destructive characterization (e.g. cross-section to access the organic layers sandwiched between el… ▽ More Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked memory structures, but the analysis remains indirect and needs destructive characterization (e.g. cross-section to access the organic layers sandwiched between electrodes). Here, we report a study on a planar, monolayer thick, hybrid nanoparticle/molecule device (10 nm gold nanoparticles embedded in an electro-generated poly(2-thienyl-3,4-(ethylenedioxy)thiophene) layer), combining, in situ, on the same device, physical (scanning electron microscope, physico-chemical (thermogravimetry and mass spectroscopy, Raman spectroscopy) and electrical (temperature dependent current-voltage) characterizations. We demonstrate that the forming process causes an increase in the gold particle size, almost 4 times larger than the starting nanoparticles, and that the organic layer undergoes a significant chemical rearrangement from a sp3 to sp2 amorphous carbon material. Temperature dependent electrical characterizations of this nonvolatile memory confirm that the charge transport mechanism in the device is consistent with a trap-filled space charge limited current in the off state, the sp2 amorphous carbon material containing many electrically active defects. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Journal ref: Nanoscale Adv., 2019,1, 2718-2726

Electron transport through self-assembled monolayers of tripeptides

Authors: E. Mervinetsky, I. Alshanski, S. Lenfant, D. Guerin, L. Medrano Sandonas, A. Dianat, R. Gutierrez, G. Cuniberti, M. Hurevich, S. Yitzchaik, D. Vuillaume

Abstract: We report how the electron transport through a solid-state metal/Gly-Gly-His tripeptide (GGH) monolayer/metal junction and the metal/GGH work function are modified by the GGH complexation with Cu2+ ions. Conducting AFM is used to measure the current-voltage histograms. The work function is characterized by combining macroscopic Kelvin probe and Kelvin probe force microscopy at the nanoscale. We ob… ▽ More We report how the electron transport through a solid-state metal/Gly-Gly-His tripeptide (GGH) monolayer/metal junction and the metal/GGH work function are modified by the GGH complexation with Cu2+ ions. Conducting AFM is used to measure the current-voltage histograms. The work function is characterized by combining macroscopic Kelvin probe and Kelvin probe force microscopy at the nanoscale. We observe that the Cu2+ ions complexation with the GGH monolayer is highly dependent on the molecular surface density and results in opposite trends. In the case of a high density monolayer the conformational changes are hindered by the proximity of the neighboring peptides, hence forming an insulating layer in response to copper-complexation. Whereas the slightly lower density monolayers allow for the conformational change to a looped peptide wrapping the Cu-ion, which results in a more conductive monolayer. Copper-ion complexation to the high- and low-density monolayers systematically induces an increase of the work functions. Copper-ion complexation to the low-density monolayer induces an increase of electron transport efficiency, while the copper-ion complexation to the high-density monolayer results in a slight decrease of electron transport. Both of the observed trends are in agreement with first-principle calculations. Complexed copper to low density GGH-monolayer induces a new gap state slightly above the Au Fermi energy that is absent in the high density monolayer. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Comments: Full paper with supporting information

Journal ref: J. Phys. Chem. C .123 (14), 9600-9608 (2019)

Charge transport through redox active [H7P8W48O184]33- polyoxometalates self-assembled onto gold surfaces and gold nanodots

Authors: K. Dalla Francesca, S. Lenfant, M. Laurans, F. Volatron, G. Izzet, V. Humblot, C. Methivier, D. Guerin, A. Proust, D. Vuillaume

Abstract: Polyoxometalates (POMs) are redox-active molecular oxides, which attract growing interest for their integration into nano-devices, such as high-density data storage non-volatile memories. In this work, we investigated the electrostatic deposition of the negatively charged [H7P8W48O184]33- POM onto positively charged 8-amino-1-octanethiol self-assembled monolayers (SAMs) preformed onto gold substra… ▽ More Polyoxometalates (POMs) are redox-active molecular oxides, which attract growing interest for their integration into nano-devices, such as high-density data storage non-volatile memories. In this work, we investigated the electrostatic deposition of the negatively charged [H7P8W48O184]33- POM onto positively charged 8-amino-1-octanethiol self-assembled monolayers (SAMs) preformed onto gold substrates or onto an array of gold nanodots. The ring-shaped [H7P8W48O184]33- POM was selected as an example of large POMs with high charge storage capacity. To avoid the formation of POM aggregates onto the substrates, which would introduce variability in the local electrical properties, special attention has to be paid to the preformed SAM seeding layer, which should itself be deprived of aggregates. Where necessary, rinsing steps were found to be crucial to eliminate these aggregates and to provide uniformly covered substrates for subsequent POM deposition and electrical characterizations. This especially holds for commercially available gold/glass substrates while these rinsing steps were not essential in the case of template stripped gold of very low roughness. Charge transport through the related molecular junctions and nanodot molecule junctions (NMJs) has been probed by conducting-AFM. We analyzed the current-voltage curves with different models: electron tunneling though the SAMs (Simmons model), transition voltage spectroscopy (TVS) method or molecular single energy level mediated transport (Landauer equation) and we discussed the energetics of the molecular junctions. We concluded to an energy level alignment of the alkyl spacer and POM lowest occupied molecular orbitals (LUMOs), probably due to dipolar effects. △ Less

Submitted 22 February, 2019; originally announced April 2019.

Comments: Paper and supporting information

Journal ref: Nanoscale 11, 1863-1878 (2019)

Electrical detection of plasmon-induced isomerization in molecule-nanoparticle network devices

Authors: Didier Stievenard, David Guerin, Stephane Lenfant, Gaetan Lévêque, Christian A. Nijhuis, Dominique Vuillaume

Abstract: We use a network of molecularly linked gold nanoparticles (NPSAN: nanoparticles self-assembled network) to demonstrate the electrical detection (conductance variation) of a plasmon-induced isomerization (PII) of azobenzene derivatives (azobenzene bithiophene : AzBT). We show that PII is more efficient in a 3D-like (cluster-NPSAN) than in a purely two-dimensional NPSAN (i.e., a monolayer of AzBT fu… ▽ More We use a network of molecularly linked gold nanoparticles (NPSAN: nanoparticles self-assembled network) to demonstrate the electrical detection (conductance variation) of a plasmon-induced isomerization (PII) of azobenzene derivatives (azobenzene bithiophene : AzBT). We show that PII is more efficient in a 3D-like (cluster-NPSAN) than in a purely two-dimensional NPSAN (i.e., a monolayer of AzBT functionalized Au NPs). By comparison with usual optical (UV-visible light) isomerization of AzBT, the PII shows a faster (a factor about 10) isomerization kinetics. Possible PII mechanisms are discussed: electric field-induced isomerization, two-phonon process, plasmon-induced resonant energy transfer (PIRET), the latter being the most likely. △ Less

Submitted 13 December, 2018; originally announced December 2018.

Comments: Final manuscript with supporting information

Journal ref: Nanoscale, 10, 23122-23130 (2018)

Molecular Signature of Polyoxometalates in Electron Transport of Silicon-based Molecular Junctions

Authors: Maxime Laurans, Kevin Dalla Francesca, Florence Volatron, Guillaume Izzet, David Guerin, Dominique Vuillaume, Stephane Lenfant, Anna Proust

Abstract: Polyoxometalates (POMs) are unconventional electro-active molecules with a great potential for applications in molecular memories, providing efficient processing steps onto electrodes are available. The synthesis of the organic-inorganic polyoxometalate hybrids [PM$_{11}$O$_{39}$(Sn(C$_6$H$_4$)C$\equiv$C(C$_6$H$_4$)N$_2$)]$^{3-}$ (M = Mo, W) endowed with a remote diazonium function is reported tog… ▽ More Polyoxometalates (POMs) are unconventional electro-active molecules with a great potential for applications in molecular memories, providing efficient processing steps onto electrodes are available. The synthesis of the organic-inorganic polyoxometalate hybrids [PM$_{11}$O$_{39}$(Sn(C$_6$H$_4$)C$\equiv$C(C$_6$H$_4$)N$_2$)]$^{3-}$ (M = Mo, W) endowed with a remote diazonium function is reported together with their covalent immobilization onto hydrogenated n-Si(100) substrates. Electron transport measurements through the resulting densely-packed monolayers contacted with a mercury drop as a top electrode confirms their homogeneity. Adjustment of the current-voltage curves with the Simmons equation gives a mean tunnel energy barrier of 1.8 eV and 1.6 eV, for the Silicon-Molecules-Metal (SMM) junctions based on the polyoxotungstates (M = W) and polyoxomolybdates (M = Mo), respectively. This follows the trend observed in the electrochemical properties of POMs in solution, the polyoxomolybdates being easier to reduce than the polyoxotungstates, in agreement with lowest unoccupied molecular orbitals (LUMOs) of lower energy. The molecular signature of the POMs is thus clearly identifiable in the solid-state electrical properties and the unmatched diversity of POM molecular and electronic structures should offer a great modularity. △ Less

Submitted 3 September, 2018; originally announced September 2018.

Journal ref: Nanoscale 10, 17156-17165 (2018)

Light-stimulable molecules/nanoparticles networks for switchable logical functions and reservoir computing

Authors: Y. Viero, D. Guerin, A. Vladyka, F. Alibart, S. Lenfant, M. Calame, D. Vuillaume

Abstract: We report the fabrication and electron transport properties of nanoparticles self-assembled networks (NPSAN) of molecular switches (azobenzene derivatives) interconnected by Au nanoparticles, and we demonstrate optically-driven switchable logical operations associated to the light controlled switching of the molecules. The switching yield is up to 74%. We also demonstrate that these NPSANs are pro… ▽ More We report the fabrication and electron transport properties of nanoparticles self-assembled networks (NPSAN) of molecular switches (azobenzene derivatives) interconnected by Au nanoparticles, and we demonstrate optically-driven switchable logical operations associated to the light controlled switching of the molecules. The switching yield is up to 74%. We also demonstrate that these NPSANs are prone for light-stimulable reservoir computing. The complex non-linearity of electron transport and dynamics in these highly connected and recurrent networks of molecular junctions exhibit rich high harmonics generation (HHG) required for reservoir computing (RC) approaches. Logical functions and HHG are controlled by the isomerization of the molecules upon light illumination. These results, without direct analogs in semiconductor devices, open new perspectives to molecular electronics in unconventional computing. △ Less

Submitted 7 August, 2018; originally announced August 2018.

Journal ref: Adv. Func. Mater. 28, 1801506, 2018

Probing frontier orbital energies of (Co9(P2W15)3) polyoxometalate clusters at molecule-metal and molecule-water interfaces

Authors: Xiaofeng Yi, Natalya V. Izarova, Maria Stuckart, David Guerin, Louis Thomas, Stephane Lenfant, Dominique Vuillaume, Jan van Leusen, Tomas Duchon, Slavomir Nemsak, Svenja D. M. Bourone, Sebastian Schmitz, Paul Kogerler

Abstract: Functionalization of polyoxotungstates with organoarsonate co-ligands enabling surface decoration was explored for the triangular cluster architectures of the composition [CoII9(H2O)6(OH)3(p-RC6H4AsVO3)2(α-PV2WVI15O56)3]25-({Co9(P2W15)3}, R = H or NH2), isolated as Na25[Co9(OH)3(H2O)6(C6H5AsO3)2(P2W15O56)3]86H2O (Na-1) and Na25[Co9(OH)3(H2O)6(H2NC6H4AsO3)2(P2W15O56)3]86H2O (Na-2). The axially orie… ▽ More Functionalization of polyoxotungstates with organoarsonate co-ligands enabling surface decoration was explored for the triangular cluster architectures of the composition [CoII9(H2O)6(OH)3(p-RC6H4AsVO3)2(α-PV2WVI15O56)3]25-({Co9(P2W15)3}, R = H or NH2), isolated as Na25[Co9(OH)3(H2O)6(C6H5AsO3)2(P2W15O56)3]86H2O (Na-1) and Na25[Co9(OH)3(H2O)6(H2NC6H4AsO3)2(P2W15O56)3]86H2O (Na-2). The axially oriented para-aminophenyl groups in 2 facilitate the formation of self-assembled monolayers on gold surfaces, and thus provide a viable molecular platform for charge transport studies of magnetically functionalized polyoxometalates. The title systems were isolated and characterized in the solid state and in aqueous solutions, and on metal surfaces. Using conducting tip atomic force microscopy (C-AFM), the energies of {Co9(P2W15)3} frontier molecular orbitals in the surface-bound state were found to directly correlate with cyclic voltammetry data in aqueous solution. △ Less

Submitted 25 December, 2017; originally announced December 2017.

Comments: Full paper with figures and supporting information

Journal ref: J. Am. Chem. Soc. 139, 14501-14510 (2017)

Concentric-electrode organic electrochemical transistors: case study for selective hydrazine sensing

Authors: S Pecqueur, S Lenfant, D Guerin, F Alibart, D Vuillaume

Abstract: We report on hydrazine-sensing organic electrochemical transistors (OECTs) with a design consisting in concentric annular electrodes. The design engineering of these OECTs was motivated by the great potential of using OECT sensing arrays in fields such as bioelectronics. In this work, PEDOT:PSS-based OECTs have been studied as aqueous sensors, specifically sensitive to the lethal hydrazine molecul… ▽ More We report on hydrazine-sensing organic electrochemical transistors (OECTs) with a design consisting in concentric annular electrodes. The design engineering of these OECTs was motivated by the great potential of using OECT sensing arrays in fields such as bioelectronics. In this work, PEDOT:PSS-based OECTs have been studied as aqueous sensors, specifically sensitive to the lethal hydrazine molecule. These amperometric sensors have many relevant features for the development of hydrazine sensors, such as a sensitivity down to 10-5 M of hydrazine in water, an order of magnitude higher selectivity for hydrazine than for 9 other water soluble common analytes, the capability to recover entirely its base signal after water flushing and a very low voltage operation. The specificity for hydrazine to be sensed by our OECTs is caused by its catalytic oxidation at the gate electrode and enables increasing the output current modulation of the devices. This has permitted the device-geometry study of the whole series of 80 micrometric OECT devices with sub-20-nm PEDOT:PSS layers, channel lengths down to 1um and a specific device geometry of coplanar and concentric electrodes. The numerous geometries unravel new aspects of the OECT mechanisms governing the electrochemical sensing behaviours of the device, more particularly the effect of the contacts which are inherent at the micro-scale. By lowering the device cross-talking, micrometric gate-integrated radial OECTs shall contribute to the diminishing of the readout invasiveness and therefore promotes further the development of OECT biosensors. △ Less

Submitted 22 July, 2017; originally announced July 2017.

Journal ref: Sensors 17, 570 (2017)

A New Photomechanical Molecular Switch Based on a Linear π-Conjugated System

Authors: S. Lenfant, Y. Viero, C. Krzeminski, D. Vuillaume, D. Demeter, I. Dobra, M. Ocafrain, P. Blanchard, J. Roncali, C. van Dyck, J. Cornil

Abstract: We report the electronic transport properties of a new photo-addressable molecular switch. The switching process relies on a new concept based on linear π-conjugated dynamic systems, in which the geometry and hence the electronic properties of an oligothiophene chain can be reversibly modified by the photochemical trans-cis isomerization of an azobenzene unit fixed in a lateral loop. Electron tran… ▽ More We report the electronic transport properties of a new photo-addressable molecular switch. The switching process relies on a new concept based on linear π-conjugated dynamic systems, in which the geometry and hence the electronic properties of an oligothiophene chain can be reversibly modified by the photochemical trans-cis isomerization of an azobenzene unit fixed in a lateral loop. Electron transport measurements through self-assembled monolayers on gold, contacted with eGaIn top contact, show switching with a conductance ratio up to 1E3. Ab initio calculations have been used to identify the most energetically stable conformations of the molecular switch, the corresponding calculated conductances qualitatively explain the trend observed in the photo-switching experiments. △ Less

Submitted 23 May, 2017; v1 submitted 19 May, 2017; originally announced May 2017.

Comments: Full manuscript and supporting information, J. Phys. Chem. C,published on line (2017)

Journal ref: J. Phys. Chem. C 121, 12416-12425 (2017)

Negative Differential Resistance, Memory and Reconfigurable Logic Functions based on Monolayer Devices derived from Gold Nanoparticles Functionalized with Electro-polymerizable Thiophene-EDOT Units

Authors: T. Zhang, D. Guerin, F. Alibart, D. Vuillaume, K. Lmimouni, S. Lenfant, A. Yassin, M. Ocafrain, P. Blanchard, J. Roncali

Abstract: We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer gaps (100 nm to 10 um apart), and electropolymerized in situ to form a monolayer film of conjugated polymer with embedded gold nanoparticles (AuNPs). Electrical… ▽ More We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer gaps (100 nm to 10 um apart), and electropolymerized in situ to form a monolayer film of conjugated polymer with embedded gold nanoparticles (AuNPs). Electrical properties of these films exhibit two interesting behaviors: (i) a NDR (negative differential resistance) behavior with a peak/valley ratio up to 17, and (ii) a memory behavior with an ON/OFF current ratio of about 1E3 to 1E4. A careful study of the switching dynamics and programming voltage window is conducted demonstrating a non-volatile memory. The data retention of the ON and OFF states is stable (tested up to 24h), well controlled by the voltage and preserved when repeating the switching cycles (800 in this study). We demonstrate reconfigurable Boolean functions in multiterminal connected NP molecule devices. △ Less

Submitted 26 April, 2017; originally announced April 2017.

Comments: Full manuscript, figures and supporting information, J. Phys. Chem. C, on line, asap (2017)

Journal ref: J. Phys. Chem. C 121, 10131-10139 (2017)

Physical Study by Surface Characterizations of Sarin Sensor on the Basis of Chemically Functionalized Silicon Nanoribbon Field Effect Transistor

Authors: K. Smaali, D. Guerin, V. Passi, L. Ordronneau, A. Carella, T. Melin, E. Dubois, D. Vuillaume, J. P. Simonato, S. Lenfant

Abstract: Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated with changes in the current-voltage characteristics of the devices. KPFM measurements on FETs allow (i) to investigate the contact potential difference (CPD) di… ▽ More Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated with changes in the current-voltage characteristics of the devices. KPFM measurements on FETs allow (i) to investigate the contact potential difference (CPD) distribution of the polarized device as function of the gate voltage and the exposure to OP traces and, (ii) to analyze the CPD hysteresis associated to the presence of mobile ions on the surface. The CPD measured by KPFM on the silicon nanoribbon was corrected due to side capacitance effects in order to determine the real quantitative surface potential. Comparison with macroscopic Kelvin probe (KP) experiments on larger surfaces was carried out. These two approaches were quantitatively consistent. An important increase of the CPD values (between + 399 mV and + 302 mV) was observed after the OP sensor grafting, corresponding to a decrease of the work function, and a weaker variation after exposure to OP (between - 14 mV and - 61 mV) was measured. Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. The OP molecules were essentially localized on the Si-NR confirming effectiveness and selectivity of the OP sensor. A prototype was exposed to Sarin vapors and succeeded in the detection of low vapor concentrations (40 ppm). △ Less

Submitted 20 May, 2016; originally announced May 2016.

Comments: Paper and supporting information, J. Phys. Chem. C, 2016

Journal ref: J. Phys. Chem. C 120, 11180-11191 (2016)

High Conductance Ratio in Molecular Optical Switching of Functionalized Nanoparticle Self-Assembled Nanodevices

Authors: Yannick Viero, Guillaume Copie, David Guerin, Christophe Krzeminski, Dominique Vuillaume, Stephane Lenfant, Fabrizio Cleri

Abstract: Self-assembled functionalized nano particles are at the focus of a number of potential applications, in particular for molecular scale electronics devices. Here we perform experiments of self-assembly of 10 nm Au nano particles (NPs), functionalized by a dense layer of azobenzene-bithiophene (AzBT) molecules, with the aim of building a light-switchable device with memristive properties. We fabrica… ▽ More Self-assembled functionalized nano particles are at the focus of a number of potential applications, in particular for molecular scale electronics devices. Here we perform experiments of self-assembly of 10 nm Au nano particles (NPs), functionalized by a dense layer of azobenzene-bithiophene (AzBT) molecules, with the aim of building a light-switchable device with memristive properties. We fabricate planar nanodevices consisting of NP self-assembled network (NPSANs) contacted by nanoelectrodes separated by interelectrode gaps ranging from 30 to 100 nm. We demonstrate the light-induced reversible switching of the electrical conductance in these AzBT NPSANs with a record on/off conductance ratio up to 620, an average value of ca. 30 and with 85% of the devices having a ratio above 10. Molecular dynamics simulation of the structure and dynamics of the interface between molecular monolayers chemisorbed on the nano particle surface are performed and compared to the experimental findings. The properties of the contact interface are shown to be strongly correlated to the molecular conformation which in the case of AzBT molecules, can reversibly switched between a cis and a trans form by means of light irradiations of well-defined wavelength. Molecular dynamics simulations provide a microscopic explanation for the experimental observation of the reduction of the on/off current ratio between the two isomers, compared to experiments performed on flat self-assembled monolayers contacted by a conducting cAFM tip. △ Less

Submitted 13 September, 2015; originally announced September 2015.

Comments: pdf files : publication and supporting information

Journal ref: J. Phys. Chem. C, 2015, 119, pp 21173_21183

Influence of Molecular Organization on the Electrical Characteristics of π-conjugated Self-assembled Monolayers

Authors: Xavier Lefevre, Fabrice Moggia, Olivier Segut, Yu-Pu Lin, Younal Ksari, Gregory Delafosse, Kacem Smaali, David Guerin, Vincent Derycke, Dominique Vuillaume, Stephane Lenfant, Lionel Patrone, Bruno Jousselme

Abstract: Two new thiol compounds with σ-π-σ structure were synthesized and self-assembled on gold substrates. The morphology and the structural characterization of SAMs assessed by infrared spectroscopy, contact angle, XPS, electrochemistry and scanning tunneling microscopy (STM) show the formation of monolayers. SAMs with a terthiophene (3TSH) core as conjugated system are much better organized compared t… ▽ More Two new thiol compounds with σ-π-σ structure were synthesized and self-assembled on gold substrates. The morphology and the structural characterization of SAMs assessed by infrared spectroscopy, contact angle, XPS, electrochemistry and scanning tunneling microscopy (STM) show the formation of monolayers. SAMs with a terthiophene (3TSH) core as conjugated system are much better organized compared to those with a naphthalene carbodiimide (NaphSH) core as demonstrated by the cyclic voltammetry and STM studies. The surface concentration of 3TSH and NaphSH is respectively three and six times lower than ordered SAMs of pure alkyl chains. A large number of I/V characteristics have been studied either by STS measurements on gold substrates or by C-AFM on gold nanodots. Transition Voltage Spectroscopy (TVS) was used to clearly identify the transport in these partially organized monolayers. The chemical nature of the conjugated system, donor for 3TSH and acceptor for NaphSH, involves an opposite rectification associated to the asymmetrical coupling of the molecular orbitals and the electrodes. The conductance histograms show that the 3TSH junctions are less dispersed than those of NaphSH junctions. This is explained by a better control of the molecular organization in the molecular junctions. △ Less

Submitted 16 May, 2015; originally announced May 2015.

Comments: Full paper with supporting information

Journal ref: J. Phys. Chem. C 119, 5703-5713 (2015)

Low voltage and time constant organic synapse-transistor

Authors: Simon Desbief, Adrica Kyndiah, David Guerin, Denis Gentili, Mauro Murgia, Stéphane Lenfant, Fabien Alibart, Tobias Cramer, Fabio Biscarini, Dominique Vuillaume

Abstract: We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when sti… ▽ More We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when stimulating the device with input spikes of 1 volt. Both significant facilitating and depressing behaviors of this artificial synapse are observed with a relative amplitude of about 50% and a dynamic response < 200 ms. From a series of in-situ experiments, i.e. measuring the current-voltage characteristic curves in-situ and in real time, during the growth of the pentacene over a network of gold nanoparticles, we elucidate these results by analyzing the relationship between the organic film morphology and the transport properties. This synapstor works at a low energy of about 2 nJ/spike. We discuss the implications of these results for the development of neuro-inspired computing architectures and interfacing with biological neurons. △ Less

Submitted 16 May, 2015; originally announced May 2015.

Comments: Full paper with supporting information

Journal ref: Organic Electronics 21, 47-53 (2015)

Interface Dipole : Effects on Threshold Voltage and Mobility for both Amorphous and Poly-crystalline Organic Field Effect Transistors

Authors: C. Celle, C. Suspene, M. Ternisien, S. Lenfant, D. Guerin, K. Smaali, K. Lmimouni, J. P. Simonato, D. Vuillaume

Abstract: We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship between the threshold voltage and the dipole-induced charges in the SAM holds when both types of devic… ▽ More We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship between the threshold voltage and the dipole-induced charges in the SAM holds when both types of devices are fabricated on strictly identical base substrates. Charge carrier mobilities, almost constant for amorphous OFET, are not affected by the dipole in the SAMs, while for polycrystalline OFET (pentacene) the large variation of charge carrier mobilities is related to change in the organic film structure (mostly grain size). △ Less

Submitted 4 February, 2014; originally announced February 2014.

Comments: Full paper and supporting information

Journal ref: Organic Electronics, 2014 vol. 15 (3) pp. 729-737

Pavlov's dog associative learning demonstrated on synaptic-like organic transistors

Authors: O. Bichler, W. Zhao, F. Alibart, S. Pleutin, S. Lenfant, D. Vuillaume, C. Gamrat

Abstract: In this letter, we present an original demonstration of an associative learning neural network inspired by the famous Pavlov's dogs experiment. A single nanoparticle organic memory field effect transistor (NOMFET) is used to implement each synapse. We show how the physical properties of this dynamic memristive device can be used to perform low power write operations for the learning and implement… ▽ More In this letter, we present an original demonstration of an associative learning neural network inspired by the famous Pavlov's dogs experiment. A single nanoparticle organic memory field effect transistor (NOMFET) is used to implement each synapse. We show how the physical properties of this dynamic memristive device can be used to perform low power write operations for the learning and implement short-term association using temporal coding and spike timing dependent plasticity based learning. An electronic circuit was built to validate the proposed learning scheme with packaged devices, with good reproducibility despite the complex synaptic-like dynamic of the NOMFET in pulse regime. △ Less

Submitted 13 February, 2013; originally announced February 2013.

Journal ref: Neural Computation 25(2), 549-566 (2013)

A Crown-Ether Loop-Derivatized Oligothiophene Doubly Attached on Gold Surface as Cation-Binding Switchable Molecular Junction

Authors: Truong Khoa Tran, Kacem Smaali, Marie Hardouin, Quentin Bricaud, Maitena Ocafrain, Philippe Blanchard, Stephane Lenfant, Sylvie Godey, Jean Roncali, Dominique Vuillaume

Abstract: A crown-ether dithiol quaterthiophene is synthesized for its covalent immobilization by double fixation on gold surface. While the corresponding dithioester precursor exhibits Pb2+ complexation properties in solution as evidenced by UV-vis spectroscopy and cyclic voltammetry, this Pb2+ affinity is still maintained for monolayers of the dithiol on gold. In addition, current-voltage measurements by… ▽ More A crown-ether dithiol quaterthiophene is synthesized for its covalent immobilization by double fixation on gold surface. While the corresponding dithioester precursor exhibits Pb2+ complexation properties in solution as evidenced by UV-vis spectroscopy and cyclic voltammetry, this Pb2+ affinity is still maintained for monolayers of the dithiol on gold. In addition, current-voltage measurements by Eutectic GaIn drop contact on the monolayer show a significant increase (up to 1.6 x 1E3) of the current at low bias after Pb2+ complexation. △ Less

Submitted 5 October, 2012; originally announced October 2012.

Comments: Paper and supplementary information; Advanced Materials (on line, 2012)

Journal ref: Adv. Mater. 25(3), 427-431 (2013)

Molecule-Electrode Interface Energetics in Molecular Junction: a Transition Voltage Spectroscopy Study

Authors: Guillaume Ricœur, Stéphane Lenfant, David Guérin, Dominique Vuillaume

Abstract: We assess the performances of the transition voltage spectroscopy (TVS) method to determine the energies of the molecular orbitals involved in the electronic transport though molecular junctions. A large number of various molecular junctions made with alkyl chains but with different chemical structure of the electrode-molecule interfaces are studied. In the case of molecular junctions with clean,… ▽ More We assess the performances of the transition voltage spectroscopy (TVS) method to determine the energies of the molecular orbitals involved in the electronic transport though molecular junctions. A large number of various molecular junctions made with alkyl chains but with different chemical structure of the electrode-molecule interfaces are studied. In the case of molecular junctions with clean, unoxidized electrode-molecule interfaces, i.e. alkylthiols and alkenes directly grafted on Au and hydrogenated Si, respectively, we measure transition voltages in the range 0.9 - 1.4 V. We conclude that the TVS method allows estimating the onset of the tail of the LUMO density of states, at energy located 1.0 - 1.2 eV above the electrode Fermi energy. For oxidized interfaces (e.g. the same monolayer measured with Hg or eGaIn drops, or monolayers formed on a slightly oxidized silicon substrate), lower transition voltages (0.1 - 0.6 V) are systematically measured. These values are explained by the presence of oxide-related density of states at energies lower than the HOMO-LUMO of the molecules. As such, the TVS method is a useful technique to assess the quality of the molecule-electrode interfaces in molecular junctions. △ Less

Submitted 29 August, 2012; originally announced August 2012.

Comments: Accepted for publication in J. Phys. Chem C. One pdf file including manuscript, figures and supporting information

Journal ref: J. Phys. Chem. C 116(39), 20722-20730 (2012)

1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

Authors: Nicolas Clément, Stéphane Pleutin, Oliver Seitz, Stéphane Lenfant, Dominique Vuillaume

Abstract: We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f^y power spectrum noise with 1< y <1.2. We observe a slight bias dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mai… ▽ More We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f^y power spectrum noise with 1< y <1.2. We observe a slight bias dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with (\partial I/\partial V)^2 . A model is proposed showing qualitative agreements with our experimental data. △ Less

Submitted 6 March, 2010; originally announced March 2010.

Journal ref: Phys. Rev. B 76, 205407 (2007).

Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate

Authors: D. Guerin, S. Lenfant, S. Godey, D. Vuillaume

Abstract: We report the synthesis and the electrical properties of fullerene-based molecular junctions on silicon substrate in which the highly π-conjugated molecule C60 (πquantum well) is isolated from the electrodes by alkyl chains (σtunnel barriers). Initially, the Si/SiO2/\sigmaC60 architecture was prepared either by sequential synthesis (3 different routes) or by direct grafting of the presynthesized C… ▽ More We report the synthesis and the electrical properties of fullerene-based molecular junctions on silicon substrate in which the highly π-conjugated molecule C60 (πquantum well) is isolated from the electrodes by alkyl chains (σtunnel barriers). Initially, the Si/SiO2/\sigmaC60 architecture was prepared either by sequential synthesis (3 different routes) or by direct grafting of the presynthesized C60-σ-Si(OEt)3 molecule. We described the chemical synthesis of these routes and the physico-chemical properties of the molecular monolayers. Then, the second σtunnel barrier was added on the Si/SiO2/σC60 junction by applying a hanging mercury drop electrode thiolated with an alkanethiol monolayer. We compared the electronic transport properties of the Si/SiO2/σC60//Hg and Si/SiO2/σC60//\sigmaHg molecular junctions, and we demonstrated by transition voltage spectroscopy that the fullerene LUMO - metal Fermi energy offset can be tailored from ~ 0.2 eV to ~ 1 eV by changing the length of the alkyl chain between the C60 core and the Hg metal electrode (i. e. from direct C60//Hg contact to 14 carbon atoms tunnel barrier). △ Less

Submitted 30 March, 2010; v1 submitted 6 March, 2010; originally announced March 2010.

Comments: Single pdf file including: main text, figures, tables and supporting information.

Journal ref: J. Mater. Chem. 20(13), 2680-2690 (2010)

High on-off conductance switching ratio in optically-driven self-assembled conjugated molecular systems

Authors: Kacem Smaali, Stephane Lenfant, Sandrine Karpe, Maitena Ocafrain, Philippe Blanchard, Dominique Deresmes, Sylvie Godey, Alain Rochefort, Jean Roncali, Dominique Vuillaume

Abstract: A new azobenzene-thiophene molecular switch is designed, synthesized and used to form self-assembled monolayers (SAM) on gold. An "on/off" conductance ratio up to 7x1E3 (with an average value of 1.5x1E3) is reported. The "on" conductance state is clearly identified to the cis isomer of the azobenzene moiety. The high "on/off" ratio is explained in terms of photo-induced, configuration-related, cha… ▽ More A new azobenzene-thiophene molecular switch is designed, synthesized and used to form self-assembled monolayers (SAM) on gold. An "on/off" conductance ratio up to 7x1E3 (with an average value of 1.5x1E3) is reported. The "on" conductance state is clearly identified to the cis isomer of the azobenzene moiety. The high "on/off" ratio is explained in terms of photo-induced, configuration-related, changes in the electrode-molecule interface energetics (changes in the energy position of the molecular orbitals with respect to the Fermi energy of electrodes) in addition to changes in the tunnel barrier length (length of the molecules). First principles DFT calculations demonstrate a better delocalization of the frontier orbitals, as well as a stronger electronic coupling between the azobenzene moiety and the electrode for the cis configuration over the trans one. Measured photoionization cross-sections for the molecules in the SAM are close to the known values for azobenzene derivatives in solution. △ Less

Submitted 30 March, 2010; v1 submitted 4 February, 2010; originally announced February 2010.

Comments: 1 file with main text, figure and suppementary information

Journal ref: ACS Nano, 4(4), 2411-2421 (2010)

An organic nanoparticle transistor behaving as a biological synapse

Authors: F. Alibart, S. Pleutin, D. Guerin, C. Novembre, S. Lenfant, K. Lmimouni, C. Gamrat, D. Vuillaume

Abstract: Molecule-based devices are envisioned to complement silicon devices by providing new functions or already existing functions at a simpler process level and at a lower cost by virtue of their self-organization capabilities. Moreover, they are not bound to von Neuman architecture and this feature may open the way to other architectural paradigms. Neuromorphic electronics is one of them. Here we de… ▽ More Molecule-based devices are envisioned to complement silicon devices by providing new functions or already existing functions at a simpler process level and at a lower cost by virtue of their self-organization capabilities. Moreover, they are not bound to von Neuman architecture and this feature may open the way to other architectural paradigms. Neuromorphic electronics is one of them. Here we demonstrate a device made of molecules and nanoparticles, a nanoparticle organic memory filed-effect transistor (NOMFET), which exhibits the main behavior of a biological spiking synapse. Facilitating and depressing synaptic behaviors can be reproduced by the NOMFET and can be programmed. The synaptic plasticity for real time computing is evidenced and described by a simple model. These results open the way to rate coding utilization of the NOMFET in dynamical neuromorphic computing circuits. △ Less

Submitted 8 October, 2009; v1 submitted 15 July, 2009; originally announced July 2009.

Comments: To be publsihed in Adv. Func. Mater. Revised version. One pdf file including main paper and supplementary information

Journal ref: Adv. Func. Mater., 20, 330 (2010)

1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

Authors: Nicolas Clement, Stephane Pleutin, Oliver Seitz, Stephane Lenfant, Dominique Vuillaume

Abstract: We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f &#947; power spectrum noise with 1< &#947; <1.2. We observe a slight bias-dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bia… ▽ More We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f &#947; power spectrum noise with 1< &#947; <1.2. We observe a slight bias-dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with >. A model is proposed showing qualitative agreements with our experimental data. △ Less

Submitted 29 September, 2007; v1 submitted 19 January, 2007; originally announced January 2007.

Comments: Phys. Rev. B, in press

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi level pinning at the molecule-metal interface

Authors: S. Lenfant, D. Guerin, F. Tran Van, C. Chevrot, S. Palacin, J. P. Bourgoin, O. Bouloussa, F. Rondelez, D. Vuillaume

Abstract: We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices and we examine to what extent the nature of the pi end-group (change in the energy positi… ▽ More We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices and we examine to what extent the nature of the pi end-group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. For all the pi-groups investigated here, we observe rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (S. Lenfant et al., Nano Letters 3, 741 (2003)).The experimental current-voltage curves are analyzed with a simple analytical model, from which we extract the energy position of the molecular orbital of the pi-group in resonance with the Fermi energy of the electrodes. We report the experimental studies of the band lineup in these silicon/alkyl-pi conjugated molecule/metal junctions. We conclude that Fermi level pinning at the pi-group/metal interface is mainly responsible for the observed absence of dependence of the rectification effect on the nature of the pi-groups, even though they were chosen to have significant variations in their electronic molecular orbitals △ Less

Submitted 29 May, 2006; originally announced May 2006.

Comments: To be published in J. Phys. Chem. B

Journal ref: J. Phys. Chem. B, 110(28), 13947-13958 (2006)

Tunnel current in self-assembled monolayers of 3-mercaptopropyltrimethoxysilane

Authors: Dinesh K. Aswal, Stéphane Lenfant, David Guerin, Jatinder V. Yakhmi, Dominique Vuillaume

Abstract: The current density-voltage (J-V) characteristics of self assembled monolayers of 3-mercaptopropyltrimethoxysilane (MPTMS) chemisorbed on the native oxide surface of p+-doped Si demonstrate the excellent tunnel dielectric behavior of organic monolayers down to 3 carbon atoms. The J-V characteristics of MPTMS SAMs on Si are found to be asymmetric, and the direction of rectification has been found… ▽ More The current density-voltage (J-V) characteristics of self assembled monolayers of 3-mercaptopropyltrimethoxysilane (MPTMS) chemisorbed on the native oxide surface of p+-doped Si demonstrate the excellent tunnel dielectric behavior of organic monolayers down to 3 carbon atoms. The J-V characteristics of MPTMS SAMs on Si are found to be asymmetric, and the direction of rectification has been found to depend upon the applied voltage range. At voltages < 2.45V, the reverse bias current was found to be higher than forward bias current; while at higher voltages this trend was reversed. This result is in agreement with Simmons theory. The tunnel barrier heights for this short chain (2.56 and 2.14 eV respectively at Au and Si interfaces) are in good agreement with the ones for longer chains (>10 carbon atoms) if the chain is chemisorbed at the electrodes. These results extend all previous experiments on such molecular tunnel dielectrics down to 3 carbon atoms. This suggests that these molecular monolayers, having good tunnel behavior (up to 2.5 eV) over a large bias range, can be used as gate dielectric well below the limits of Si-based dielectrics. △ Less

Submitted 3 May, 2005; originally announced May 2005.

Comments: Small, in press

Journal ref: Small, 1(7), 725-729 (2005)

Molecular rectifying diodes from self-assembly on silicon

Authors: Stephane Lenfant, Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume

Abstract: We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the p-g… ▽ More We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the p-group in good agreement with our calculations and internal photoemission spectroscopy. This approach allows us to fabricate molecular rectifying diodes compatible with silicon nanotechnologies for future hybrid circuitries. △ Less

Submitted 26 May, 2003; originally announced May 2003.

Journal ref: Nano Letters, 2003, 3 (6), pp 741-746