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Quantum-mechanical effects in photoluminescence from thin crystalline gold films
Authors:
Alan R. Bowman,
Álvaro Rodríguez Echarri,
Fatemeh Kiani,
Fadil Iyikanat,
Ted V. Tsoulos,
Joel D. Cox,
Ravishankar Sundararaman,
F. Javier García de Abajo,
Giulia Tagliabue
Abstract:
Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its microscopic origin strongly debated, and its potential for unravelling nanoscale carrier dynamics largely unexploited. Here, we reveal quantum-…
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Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its microscopic origin strongly debated, and its potential for unravelling nanoscale carrier dynamics largely unexploited. Here, we reveal quantum-mechanical effects emanating in the luminescence from thin monocrystalline gold flakes. Specifically, we present experimental evidence, supported by first-principles simulations, to demonstrate its photoluminescence origin when exciting in the interband regime. Our model allows us to identify changes to the measured gold luminescence due to quantum-mechanical effects as the gold film thickness is reduced. Excitingly, such effects are observable in the luminescence signal from flakes up to 40 nm in thickness, associated with the out-of-plane discreteness of the electronic band structure near the Fermi level. We qualitatively reproduce the observations with first-principles modelling, thus establishing a unified description of luminescence in gold and enabling its widespread application as a probe of carrier dynamics and light-matter interactions in this material. Our study paves the way for future explorations of hot-carriers and charge-transfer dynamics in a multitude of material systems.
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Submitted 25 September, 2023; v1 submitted 17 July, 2023;
originally announced July 2023.
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Exciton-assisted electron tunneling in van der Waals heterostructures
Authors:
Lujun Wang,
Sotirios Papadopoulos,
Fadil Iyikanat,
Jian Zhang,
Jing Huang,
Kenji Watanabe,
Takashi Taniguchi,
Michel Calame,
Mickael L. Perrin,
F. Javier García de Abajo,
Lukas Novotny
Abstract:
The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons and defect states have been observed in current-to-voltage ($I-V$) measurements. These features can be explained by direct electron-phonon or electron-defect int…
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The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons and defect states have been observed in current-to-voltage ($I-V$) measurements. These features can be explained by direct electron-phonon or electron-defect interactions. Here, we use a novel tunneling process that involves excitons in transition metal dichalcogenides (TMDs). We study tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride (hBN) with an adjacent TMD monolayer and observe prominent resonant features in $I-V$ measurements. These resonances appear at bias voltages that correspond to TMD exciton energies. By placing the TMD outside of the tunneling pathway, we demonstrate that this phonon-exciton mediated tunneling process does not require any charge injection into the TMD. This work demonstrates the appearance of optical modes in electrical transport measurements and introduces a new functionality for optoelectronic devices based on van der Waals materials.
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Submitted 2 March, 2023;
originally announced March 2023.
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Nonlinear photoluminescence in gold thin films
Authors:
A. Rodríguez Echarri,
F. Iyikanat,
S. Boroviks,
N. Asger Mortensen,
Joel D. Cox,
F. Javier García de Abajo
Abstract:
Promising applications in photonics are driven by the ability to fabricate crystal-quality metal thin films of controlled thickness down to a few nanometers. In particular, these materials exhibit a highly nonlinear response to optical fields owing to the induced ultrafast electron dynamics, which is however poorly understood on such mesoscopic length scales. Here, we reveal a new mechanism that c…
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Promising applications in photonics are driven by the ability to fabricate crystal-quality metal thin films of controlled thickness down to a few nanometers. In particular, these materials exhibit a highly nonlinear response to optical fields owing to the induced ultrafast electron dynamics, which is however poorly understood on such mesoscopic length scales. Here, we reveal a new mechanism that controls the nonlinear optical response of thin metallic films, dominated by ultrafast electronic heat transport when the thickness is sufficiently small. By experimentally and theoretically studying electronic transport in such materials, we explain the observed temporal evolution of photoluminescence in pump-probe measurements that we report for crystalline gold flakes. Incorporating a first-principles description of the electronic band structures, we model electronic transport and find that ultrafast thermal dynamics plays a pivotal role in determining the strength and time-dependent characteristics of the nonlinear photoluminescence signal, which is largely influenced by the distribution of hot electrons and holes, subject to diffusion across the film as well as relaxation to lattice modes. Our findings introduce conceptually novel elements triggering the nonlinear optical response of nanoscale materials while suggesting additional ways to control and leverage hot carrier distributions in metallic films.
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Submitted 17 January, 2023;
originally announced January 2023.
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Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopy
Authors:
Yadong Wang,
Fadil Iyikanat,
Habib Rostami,
Xueyin Bai,
Xuerong Hu,
Susobhan Das,
Yunyun Dai,
Luojun Du,
Yi Zhang,
Shisheng Li,
Harri Lipsanen,
F. Javier García de Abajo,
Zhipei Sun
Abstract:
Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, we probe various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands, with a high relative contrast of up to >200 via broadband (from ~1.79 to 3.10 eV) static third-harmonic spectroscopy, which is further supported…
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Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, we probe various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands, with a high relative contrast of up to >200 via broadband (from ~1.79 to 3.10 eV) static third-harmonic spectroscopy, which is further supported by theoretical calculations. Moreover, we introduce transient third-harmonic spectroscopy to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ~94% at ~2.18 eV, providing direct evidence of dominant carrier relaxation processes, associated with carrier-exciton and carrier-phonon interactions. Our results indicate that static and transient third-harmonic spectroscopies are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.
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Submitted 13 July, 2022;
originally announced July 2022.
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Entangling free electrons and optical excitations
Authors:
Andrea Konečná,
Fadil Iyikanat,
F. Javier García de Abajo
Abstract:
The inelastic interaction between flying particles and optical nanocavities gives rise to entangled states in which some excitations of the latter are paired with changes in the energy or momentum of the former. In particular, entanglement of free electrons and nanocavity modes opens appealing opportunities associated with the strong interaction capabilities of the electrons. However, the degree o…
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The inelastic interaction between flying particles and optical nanocavities gives rise to entangled states in which some excitations of the latter are paired with changes in the energy or momentum of the former. In particular, entanglement of free electrons and nanocavity modes opens appealing opportunities associated with the strong interaction capabilities of the electrons. However, the degree of entanglement that is currently achievable by electron interaction with optical cavities is severely limited by the lack of external selectivity over the resulting state mixtures. Here, we propose a scheme to generate pure entanglement between designated optical excitations in a cavity and separable free-electron states. Specifically, we shape the electron wave-function profile to dramatically reduce the number of accessible cavity modes and simultaneously associate them with targeted electron scattering directions. We exemplify this concept through a theoretical description of free-electron entanglement with degenerate and nondegenerate plasmon modes in silver nanoparticles as well as atomic vibrations in an inorganic molecule. The generated entanglement can be further propagated through its electron component to extend quantum interactions beyond currently explored protocols.
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Submitted 1 February, 2022;
originally announced February 2022.
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Nonlinear Tunable Vibrational Response in Hexagonal Boron Nitride
Authors:
Fadil Iyikanat,
Andrea Konečná,
F. Javier García de Abajo
Abstract:
Nonlinear light-matter interactions in structured materials are the source of exciting properties and enable vanguard applications in photonics. However, the magnitude of nonlinear effects is generally small, thus requiring high optical intensities for their manifestation at the nanoscale. Here, we reveal a large nonlinear response of monolayer hexagonal boron nitride (hBN) in the mid-infrared pho…
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Nonlinear light-matter interactions in structured materials are the source of exciting properties and enable vanguard applications in photonics. However, the magnitude of nonlinear effects is generally small, thus requiring high optical intensities for their manifestation at the nanoscale. Here, we reveal a large nonlinear response of monolayer hexagonal boron nitride (hBN) in the mid-infrared phonon-polariton region, triggered by the strongly anharmonic potential associated with atomic vibrations in this material. We present robust first-principles theory predicting a threshold light field $\sim40\,$MV/m to produce order-unity effects in Kerr nonlinearities and harmonic generation, which are made possible by a combination of the long lifetimes exhibited by optical phonons and the strongly asymmetric landscape of the configuration energy in hBN. We further foresee polariton blockade at the few-quanta level in nanometer-sized structures. In addition, by mixing static and optical fields, the strong nonlinear response of monolayer hBN gives rise to substantial frequency shifts of optical phonon modes, exceeding their spectral width for in-plane DC fields that are attainable using lateral gating technology. We therefore predict a practical scheme for electrical tunability of the vibrational modes with potential interest in mid-infrared optoelectronics. The strong nonlinear response, low damping, and robustness of hBN polaritons set the stage for the development of applications in light modulation, sensing, and metrology, while triggering the search for intense vibrational nonlinear response in other ionic materials.
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Submitted 17 May, 2021;
originally announced May 2021.
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Atomic-Scale Vibrational Mapping and Isotope Identification with Electron Beams
Authors:
Andrea Konečná,
Fadil Iyikanat,
F. Javier García de Abajo
Abstract:
Transmission electron microscopy and spectroscopy currently enable the acquisition of spatially resolved spectral information from a specimen by focusing electron beams down to a sub-Angstrom spot and then analyzing the energy of the inelastically scattered electrons with few-meV energy resolution. This technique has recently been used to experimentally resolve vibrational modes in 2D materials em…
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Transmission electron microscopy and spectroscopy currently enable the acquisition of spatially resolved spectral information from a specimen by focusing electron beams down to a sub-Angstrom spot and then analyzing the energy of the inelastically scattered electrons with few-meV energy resolution. This technique has recently been used to experimentally resolve vibrational modes in 2D materials emerging at mid-infrared frequencies. Here, based on first-principles theory, we demonstrate the possibility of identifying single isotope atom impurities in a nanostructure through the trace that they leave in the spectral and spatial characteristics of the vibrational modes. Specifically, we examine a hexagonal boron nitride molecule as an example of application, in which the presence of a single isotope impurity is revealed through dramatic changes in the electron spectra, as well as in the space-, energy-, and momentum-resolved inelastic electron signal. We compare these results with conventional far-field spectroscopy, showing that electron beams offer superior spatial resolution combined with the ability to probe the complete set of vibrational modes, including those that are optically dark. Our study is relevant for the atomic-scale characterization of vibrational modes in novel materials, including a detailed mapping of isotope distributions.
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Submitted 4 February, 2021;
originally announced February 2021.
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Kagome silicene: a novel exotic form of two-dimensional epitaxial silicon
Authors:
Y. Sassa,
F. O. L. Johansson,
A. Lindblad,
M. G. Yazdi,
K. Simonov,
J. Weissenrieder,
M. Muntwiler,
F. Iyikanat,
H. Sahin,
T. Angot,
E. Salomon,
G. Le Lay
Abstract:
Since the discovery of graphene, intensive efforts have been made in search of novel two-dimensional (2D) materials. Decreasing the materials dimensionality to their ultimate thinness is a promising route to unveil new physical phenomena, and potentially improve the performance of devices. Among recent 2D materials, analogs of graphene, the group IV elements have attracted much attention for their…
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Since the discovery of graphene, intensive efforts have been made in search of novel two-dimensional (2D) materials. Decreasing the materials dimensionality to their ultimate thinness is a promising route to unveil new physical phenomena, and potentially improve the performance of devices. Among recent 2D materials, analogs of graphene, the group IV elements have attracted much attention for their unexpected and tunable physical properties. Depending on the growth conditions and substrates, several structures of silicene, germanene, and stanene can be formed. Here, we report the synthesis of a Kagome lattice of silicene on aluminum (111) substrates. We provide evidence of such an exotic 2D Si allotrope through scanning tunneling microscopy (STM) observations, high-resolution core-level (CL) and angle-resolved photoelectron spectroscopy (ARPES) measurements, along with Density Functional Theory calculations.
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Submitted 30 January, 2020;
originally announced January 2020.
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Stable Ultra-thin CdTe Crystal: A Robust Direct Gap Semiconductor
Authors:
Fadil Iyikanat,
Baris Akbali,
Jun Kang,
R. Tugrul Senger,
Yusuf Selamet,
Hasan Sahin
Abstract:
Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be de- rived from its bulk counterpart. It is found that this ultra-thin crystal has an 8-atom primitive unit cell with considerable surface reconstructions. Dynamic stability of the structure is predicted based o…
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Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be de- rived from its bulk counterpart. It is found that this ultra-thin crystal has an 8-atom primitive unit cell with considerable surface reconstructions. Dynamic stability of the structure is predicted based on its calculated vibrational spectrum. Electronic band structure calculations reveal that both electrons and holes in single layer CdTe possess anisotropic in-plane masses and mobilities. Moreover, we show that the ultra-thin CdTe has some interesting electromechanical features, such as strain-dependent anisotropic variation of the band gap value, and its rapid increase under per- pendicular compression. The direct band gap semiconducting nature of the ultra-thin CdTe crystal remains unchanged under all types of applied strain. With a robust and moderate direct band gap, single-layer CdTe is a promising material for nanoscale strain dependent device applications.
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Submitted 12 November, 2017;
originally announced November 2017.
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Thinning CsPb2Br5 Perovskite Down to Monolayers: Cs-dependent Stability
Authors:
Fadil Iyikanat,
Emre Sari,
Hasan Sahin
Abstract:
Using first-principles density functional theory calculations, we systematically investigate the structural, electronic and vibrational properties of bulk and potential single-layer structures of perovskite-like CsPb2Br5 crystal. It is found that while Cs atoms have no effect on the electronic structure, their presence is essential for the formation of stable CsPb2Br5 crystals. Calculated vibratio…
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Using first-principles density functional theory calculations, we systematically investigate the structural, electronic and vibrational properties of bulk and potential single-layer structures of perovskite-like CsPb2Br5 crystal. It is found that while Cs atoms have no effect on the electronic structure, their presence is essential for the formation of stable CsPb2Br5 crystals. Calculated vibrational spectra of the crystal reveal that not only the bulk form but also the single-layer forms of CsPb2Br5 are dynamically stable. Predicted single-layer forms can exhibit either semiconducting or metallic character. Moreover, modification of the structural, electronic and magnetic properties of single-layer CsPb2Br5 upon formation of vacancy defects is investigated. It is found that the formation of Br vacancy (i) has the lowest formation energy, (ii) significantly changes the electronic structure, and (iii) leads to ferromagnetic ground state in the single-layer CsPb2Br5 . However, the formation of Pb and Cs vacancies leads to p-type doping of the single-layer structure. Results reported herein reveal that single-layer CsPb2Br5 crystal is a novel stable perovskite with enhanced functionality and a promising candidate for nanodevice applications.
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Submitted 24 October, 2017;
originally announced October 2017.
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Quantum Transport Characteristics of Lateral pn-Junction of Single Layer TiS3
Authors:
F. Iyikanat,
R. T. Senger,
F. M. Peeters,
H. Sahin
Abstract:
Using density functional theory and nonequilibrium Greens functions-based methods we investigated the electronic and transport properties of monolayer TiS3 pn-junction. We constructed a lateral pn-junction in monolayer TiS3 by using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 pn-junction. In addition, spin dependen…
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Using density functional theory and nonequilibrium Greens functions-based methods we investigated the electronic and transport properties of monolayer TiS3 pn-junction. We constructed a lateral pn-junction in monolayer TiS3 by using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 pn-junction. In addition, spin dependent current-voltage characteristics of the constructed TiS3 pn-junction were analyzed. Important device characteristics were found such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 pn-junction. These prominent conduction properties of TiS3 pn-junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.
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Submitted 10 October, 2016;
originally announced October 2016.
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Electronic, Optical and Mechanical Properties of Silicene Derivatives
Authors:
Mehmet Yagmurcukardes,
Cihan Bacaksiz,
Fadıl Iyikanat,
Engin Torun,
R. Tugrul Senger,
Francois M. Peeters,
Hasan Sahin
Abstract:
Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to investigate their novel physical properties. Silicene, form of Si atoms arranged in a buckled honeycomb geometry, has been successfully synthesized and emerged a…
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Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to investigate their novel physical properties. Silicene, form of Si atoms arranged in a buckled honeycomb geometry, has been successfully synthesized and emerged as a promising material for nanoscale device applications. However, the major obstacle for using silicene in electronic applications is the lack of a band gap similar to the case of graphene. Therefore, tuning the electronic properties of silicene by using chemical functionalization methods such as hydrogenation, halogenation or oxidation has been a focus of interest in silicene research. In this paper, we review the recent studies on the structural, electronic, optical and mechanical proper- ties of silicene-derivative structures. Since these derivatives have various band gap energies, they are promising candidates for the next generation of electronic and optoelectronic device applications.
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Submitted 10 August, 2016;
originally announced August 2016.
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Ag and Au Atoms Intercalated in Bilayer Heterostructures of Transition Metal Dichalcogenides and Graphene
Authors:
F. Iyikanat,
H. Sahin,
R. T. Senger,
F. M. Peeters
Abstract:
The diffusive motion of metal nanoparticles Au and Ag on monolayer and between bilayer heterostructures of transition metal dichalcogenides and graphene are investigated in the framework of density functional theory. We found that the minimum energy barriers for diffusion and the possibility of cluster formation depend strongly on both the type of nanoparticle and the type of monolayers and bilaye…
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The diffusive motion of metal nanoparticles Au and Ag on monolayer and between bilayer heterostructures of transition metal dichalcogenides and graphene are investigated in the framework of density functional theory. We found that the minimum energy barriers for diffusion and the possibility of cluster formation depend strongly on both the type of nanoparticle and the type of monolayers and bilayers. Moreover, the tendency to form clusters of Ag and Au can be tuned by creating various bilayers. Tunability of the diffusion characteristics of adatoms in van der Waals heterostructures holds promise for controllable growth of nanostructures.
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Submitted 29 May, 2015;
originally announced May 2015.
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Vacancy Formation and Oxidation Characteristics of Single Layer TiS3
Authors:
F. Iyikanat,
H. Sahin,
R. T. Senger,
F. M. Peeters
Abstract:
The structural, electronic, and magnetic properties of pristine, defective, and oxidized monolayer TiS3 are investigated using first-principles calculations in the framework of density functional theory. We found that a single layer of TiS3 is a direct band gap semiconductor, and the bonding nature of the crystal is fundamentally different from other transition metal chalcogenides. The negatively…
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The structural, electronic, and magnetic properties of pristine, defective, and oxidized monolayer TiS3 are investigated using first-principles calculations in the framework of density functional theory. We found that a single layer of TiS3 is a direct band gap semiconductor, and the bonding nature of the crystal is fundamentally different from other transition metal chalcogenides. The negatively charged surfaces of single layer TiS3 makes this crystal a promising material for lubrication applications. The formation energies of possible vacancies, i.e. S, Ti, TiS, and double S, are investigated via total energy optimization calculations. We found that the formation of a single S vacancy was the most likely one among the considered vacancy types. While a single S vacancy results in a nonmagnetic, semiconducting character with an enhanced band gap, other vacancy types induce metallic behavior with spin polarization of 0.3-0.8 μB. The reactivity of pristine and defective TiS3 crystals against oxidation was investigated using conjugate gradient calculations where we considered the interaction with atomic O, O2, and O3. While O2 has the lowest binding energy with 0.05-0.07 eV, O3 forms strong bonds stable even at moderate temperatures. The strong interaction (3.9-4.0 eV) between atomic O and TiS3 results in dissociative adsorption of some O-containing molecules. In addition, the presence of S-vacancies enhances the reactivity of the surface with atomic O, whereas it had a negative effect on the reactivity with O2 and O3 molecules.
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Submitted 4 May, 2015;
originally announced May 2015.
