Showing 1–15 of 15 results for author: Hoye, R L Z

Additive engineering for Sb$_2$S$_3$ indoor photovoltaics with efficiency exceeding 17%

Authors: Xiao Chen, Xiaoxuan Shu, Jiangcheng Zhou, Lei Wan, Peng Xiao, Yuchen Fu, Junzhi Ye, Yi-Teng Huang, Bin Yan, Dingjiang Xue, Tao Chen, Jiejie Chen, Robert L. Z. Hoye, Ru Zhou

Abstract: Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb$_2$S$_3$ is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb$_2$S$_3$ solar cells is limited by nonradiative recombination, closely associated with the poor-qualit… ▽ More Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb$_2$S$_3$ is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb$_2$S$_3$ solar cells is limited by nonradiative recombination, closely associated with the poor-quality absorber films. Additive engineering is an effective strategy to improved the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb$_2$S$_3$ films to be controlled, enabling the deposition of high-quality Sb$_2$S$_3$ absorbers with reduced grain boundary density, optimized band positions and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb$_2$S$_3$ films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb$_2$S$_3$ absorber films, the MEA-modulated Sb$_2$S$_3$ solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb$_2$S$_3$ IPVs. Furthermore, we construct high performance large-area Sb$_2$S$_3$ IPV modules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb$_2$S$_3$ photovoltaics for indoor energy harvesting. △ Less

Submitted 10 June, 2024; originally announced June 2024.

Comments: 28 pages, 6 figures

Extending the Defect Tolerance of Halide Perovskite Nanocrystals to Hot Carrier Cooling Dynamics

Authors: Junzhi Ye, Navendu Mondal, Ben P. Carwithen, Yunwei Zhang, Linjie Dai, Xiangbin Fan, Jian Mao, Zhiqiang Cui, Pratyush Ghosh, Clara Otero Martinez, Lars van Turnhout, Zhongzheng Yu, Ziming Chen, Neil C. Greenham, Samuel D. Stranks, Lakshminarayana Polavarapu, Artem Bakulin, Akshay Rao, Robert L. Z. Hoye

Abstract: Defect tolerance is a critical enabling factor for efficient lead-halide perovskite materials, but the current understanding is primarily on band-edge (cold) carriers, with significant debate over whether hot carriers (HCs) can also exhibit defect tolerance. Here, this important gap in the field is addressed by investigating how internationally-introduced traps affect HC relaxation in CsPbX3 nanoc… ▽ More Defect tolerance is a critical enabling factor for efficient lead-halide perovskite materials, but the current understanding is primarily on band-edge (cold) carriers, with significant debate over whether hot carriers (HCs) can also exhibit defect tolerance. Here, this important gap in the field is addressed by investigating how internationally-introduced traps affect HC relaxation in CsPbX3 nanocrystals (X = Br, I, or mixture). Using femtosecond interband and intraband spectroscopy, along with energy-dependent photoluminescence measurements and kinetic modelling, it is found that HCs are not universally defect tolerant in CsPbX3, but are strongly correlated to the defect tolerance of cold carriers, requiring shallow traps to be present (as in CsPbI3). It is found that HCs are directly captured by traps, instead of going through an intermediate cold carrier, and deeper traps cause faster HC cooling, reducing the effects of the hot phonon bottleneck and Auger reheating. This work provides important insights into how defects influence HCs, which will be important for designing materials for hot carrier solar cells, multiexciton generation, and optical gain media. △ Less

Submitted 9 April, 2024; originally announced April 2024.

Comments: 18 pages, 5 figures

Factors Enabling Delocalized Charge-Carriers in Pnictogen-Based Solar Absorbers: In-depth Investigation into CuSbSe2

Authors: Yuchen Fu, Hugh Lohan, Marcello Righetto, Yi-Teng Huang, Seán R. Kavanagh, Chang-Woo Cho, Szymon J. Zelewski, Young Won Woo, Harry Demetriou, Martyn A. McLachlan, Sandrine Heutz, Benjamin A. Piot, David O. Scanlon, Akshay Rao, Laura M. Herz, Aron Walsh, Robert L. Z. Hoye

Abstract: Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, the layered… ▽ More Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, the layered příbramite CuSbSe2 is investigated and discovered to have delocalized free carriers, as shown through optical pump terahertz probe spectroscopy and temperature-dependent mobility measurements. Using a combination of theory and experiment, it is found that the underlying factors are: 1) weak coupling to acoustic phonons due to low deformation potentials, as lattice distortions are primarily accommodated through rigid inter-layer movement rather than straining inter-atomic bonds, and 2) weak coupling to optical phonons due to the ionic contributions to the dielectric constant being low compared to electronic contributions. This work provides important insights into how pnictogen-based semiconductors avoiding carrier localization could be identified. △ Less

Submitted 4 January, 2024; originally announced January 2024.

Comments: 47 pages, 4 figures

Roadmap on Perovskite Light-Emitting Diodes

Authors: Ziming Chen, Robert L. Z. Hoye, Hin-Lap Yip, Nadesh Fiuza-Maneiro, Iago López-Fernández, Clara Otero-Martínez, Lakshminarayana Polavarapu, Navendu Mondal, Alessandro Mirabelli, Miguel Anaya, Samuel D. Stranks, Hui Liu, Guangyi Shi, Zhengguo Xiao, Nakyung Kim, Yunna Kim, Byungha Shin, Jinquan Shi, Mengxia Liu, Qianpeng Zhang, Zhiyong Fan, James C. Loy, Lianfeng Zhao, Barry P. Rand, Habibul Arfin , et al. (18 additional authors not shown)

Abstract: In recent years, the field of metal-halide perovskite emitters has rapidly emerged as a new community in solid-state lighting. Their exceptional optoelectronic properties have contributed to the rapid rise in external quantum efficiencies (EQEs) in perovskite light-emitting diodes (PeLEDs) from <1% (in 2014) to approaching 30% (in 2023) across a wide range of wavelengths. However, several challeng… ▽ More In recent years, the field of metal-halide perovskite emitters has rapidly emerged as a new community in solid-state lighting. Their exceptional optoelectronic properties have contributed to the rapid rise in external quantum efficiencies (EQEs) in perovskite light-emitting diodes (PeLEDs) from <1% (in 2014) to approaching 30% (in 2023) across a wide range of wavelengths. However, several challenges still hinder their commercialization, including the relatively low EQEs of blue/white devices, limited EQEs in large-area devices, poor device stability, as well as the toxicity of the easily accessible lead components and the solvents used in the synthesis and processing of PeLEDs. This roadmap addresses the current and future challenges in PeLEDs across fundamental and applied research areas, by sharing the community's perspectives. This work will provide the field with practical guidelines to advance PeLED development and facilitate more rapid commercialization. △ Less

Submitted 19 November, 2023; originally announced November 2023.

Comments: 103 pages, 29 figures. This is the version of the article before peer review or editing, as submitted by an author to Journal of Physics: Photonics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it

Roadmap on Photovoltaic Absorber Materials for Sustainable Energy Conversion

Authors: James C. Blakesley, Ruy S. Bonilla, Marina Freitag, Alex M. Ganose, Nicola Gasparini, Pascal Kaienburg, George Koutsourakis, Jonathan D. Major, Jenny Nelson, Nakita K. Noel, Bart Roose, Jae Sung Yun, Simon Aliwell, Pietro P. Altermatt, Tayebeh Ameri, Virgil Andrei, Ardalan Armin, Diego Bagnis, Jenny Baker, Hamish Beath, Mathieu Bellanger, Philippe Berrouard, Jochen Blumberger, Stuart A. Boden, Hugo Bronstein , et al. (61 additional authors not shown)

Abstract: Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.… ▽ More Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.5 TWp by 2050 according to the International Renewable Energy Agency, which is considered to be a highly conservative estimate. In 2020, the Henry Royce Institute brought together the UK PV community to discuss the critical technological and infrastructure challenges that need to be overcome to address the vast challenges in accelerating PV deployment. Herein, we examine the key developments in the global community, especially the progress made in the field since this earlier roadmap, bringing together experts primarily from the UK across the breadth of the photovoltaics community. The focus is both on the challenges in improving the efficiency, stability and levelized cost of electricity of current technologies for utility-scale PVs, as well as the fundamental questions in novel technologies that can have a significant impact on emerging markets, such as indoor PVs, space PVs, and agrivoltaics. We discuss challenges in advanced metrology and computational tools, as well as the growing synergies between PVs and solar fuels, and offer a perspective on the environmental sustainability of the PV industry. Through this roadmap, we emphasize promising pathways forward in both the short- and long-term, and for communities working on technologies across a range of maturity levels to learn from each other. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Comments: 160 pages, 21 figures

Fast near-infrared photodetectors based on nontoxic and solution-processable AgBiS2

Authors: Yi-Teng Huang, Davide Nodari, Francesco Furlan, Youcheng Zhang, Marin Rusu, Linjie Dai, Zahra Andaji-Garmaroudi, Samuel D. Stranks, Henning Sirringhaus, Akshay Rao, Nicola Gasparini, Robert L. Z. Hoye

Abstract: Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, there is currently a compromise between low toxicity and slow (<300 kHz cut-off frequency) organic materials versus faster detectors (>300 kHz cut-off frequency) based on compounds containing toxic lead or ca… ▽ More Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, there is currently a compromise between low toxicity and slow (<300 kHz cut-off frequency) organic materials versus faster detectors (>300 kHz cut-off frequency) based on compounds containing toxic lead or cadmium. Herein, we circumvent this trade-off by developing solution-processed AgBiS2 photodetectors with high cut-off frequencies under both white light (>1 MHz) and NIR (approaching 500 kHz) illumination. These high cut-off frequencies are due to the short transit distances of charge-carriers in the AgBiS2 photodetectors, which arise from the strong light absorption of these materials, such that film thicknesses well below 120 nm are adequate to absorb >65% of near-infrared to visible light. By finely controlling the thickness of the photoactive layer, we can modulate the charge-collection efficiency, achieve low dark current densities, and minimize the effects of ion migration to realize fast photodetectors that are stable in air. These outstanding characteristics enable real-time heartbeat sensors based on NIR AgBiS2 photodetectors. # equal contribution, * corresponding authors △ Less

Submitted 23 August, 2023; originally announced August 2023.

Comments: 29 pages, 4 figures, 1 table

Direct Linearly-Polarised Electroluminescence from Perovskite Nanoplatelet Superlattices

Authors: Junzhi Ye, Aobo Ren, Linjie Dai, Tomi Baikie, Renjun Guo, Debapriya Pal, Sebastian Gorgon, Julian E. Heger, Junyang Huang, Yuqi Sun, Rakesh Arul, Gianluca Grimaldi, Kaiwen Zhang, Javad Shamsi, Yi-Teng Huang, Hao Wang, Jiang Wu, A. Femius Koenderink, Laura Torrente Murciano, Matthias Schwartzkopf, Stephen V. Roth, Peter Muller-Buschbaum, Jeremy J. Baumberg, Samuel D. Stranks, Neil C. Greenham , et al. (4 additional authors not shown)

Abstract: Polarised light is critical for a wide range of applications, but is usually generated by filtering unpolarised light, which leads to significant energy losses and requires additional optics. Herein, the direct emission of linearly-polarised light is achieved from light-emitting diodes (LEDs) made of CsPbI3 perovskite nanoplatelet superlattices. Through use of solvents with different vapour pressu… ▽ More Polarised light is critical for a wide range of applications, but is usually generated by filtering unpolarised light, which leads to significant energy losses and requires additional optics. Herein, the direct emission of linearly-polarised light is achieved from light-emitting diodes (LEDs) made of CsPbI3 perovskite nanoplatelet superlattices. Through use of solvents with different vapour pressures, the self-assembly of perovskite nanoplatelets is achieved to enable fine control over the orientation (either face-up or edge-up) and therefore the transition dipole moment. As a result of the highly-uniform alignment of the nanoplatelets, as well as their strong quantum and dielectric confinement, large exciton fine-structure splitting is achieved at the film level, leading to pure-red LEDs exhibiting a high degree of linear polarisation of 74.4% without any photonic structures. This work unveils the possibilities of perovskite nanoplatelets as a highly promising source of linearly-polarised electroluminescence, opening up the development of next-generation 3D displays and optical communications from this highly versatile, solution-processable system. △ Less

Submitted 8 February, 2023; v1 submitted 7 February, 2023; originally announced February 2023.

Comments: 26 pages, 5 figures

Identifying and reducing interfacial losses to enhance color-pure electroluminescence in blue-emitting perovskite nanoplatelet light-emitting diodes

Authors: Robert L. Z. Hoye, May-Ling Lai, Miguel Anaya, Yu Tong, Krzysztof Gałkowski, Tiarnan Doherty, Weiwei Li, Tahmida N. Huq, Sebastian Mackowski, Lakshminarayana Polavarapu, Jochen Feldmann, Judith L. MacManus-Driscoll, Richard H. Friend, Alexander S. Urban, Samuel D. Stranks

Abstract: Perovskite nanoplatelets (NPls) hold great promise for light-emitting applications, having achieved high photoluminescence quantum efficiencies (PLQEs) approaching unity in the blue wavelength range, where other metal-halide perovskites have typically been ineffective. However, the external quantum efficiency (EQE) of blue-emitting NPl light-emitting diodes (LEDs) have only reached 0.12%, with typ… ▽ More Perovskite nanoplatelets (NPls) hold great promise for light-emitting applications, having achieved high photoluminescence quantum efficiencies (PLQEs) approaching unity in the blue wavelength range, where other metal-halide perovskites have typically been ineffective. However, the external quantum efficiency (EQE) of blue-emitting NPl light-emitting diodes (LEDs) have only reached 0.12%, with typical values well below 0.1%. In this work, we show that the performance of NPl LEDs is primarily hindered by a poor electronic interface between the emitter and hole-injector. Through Kelvin Probe and X-ray photoemission spectroscopy measurements, we reveal that the NPls have remarkably deep ionization potentials (>=6.5 eV), leading to large barriers for hole injection, as well as substantial non-radiative decay at the interface between the emitter and hole-injector. We find that an effective way to reduce these non-radiative losses is by using poly(triarylamine) interlayers. This results in an increase in the EQE of our blue LEDs emitting at 464 nm wavelength to 0.3%. We find that our results can be generalized to thicker sky-blue-emitting NPls, where we increase the EQE to 0.55% using the poly(triarylamine) interlayer. Our work also identifies the key challenges for further efficiency increases. △ Less

Submitted 28 October, 2020; originally announced October 2020.

Journal ref: ACS Energy Lett. 2019, 4, 5, 1181

Boosting tunable blue luminescence of halide perovskite nanoplatelets through post-synthetic surface trap repair

Authors: Bernhard J. Bohn, Yu Tong, Moritz Gramlich, May Ling Lai, Markus Döblinger, Kun Wang, Robert L. Z. Hoye, Peter Müller-Buschbaum, Samuel D. Stranks, Alexander S. Urban, Lakshminarayana Polavarapu, Jochen Feldmann

Abstract: The easily tunable emission of halide perovskite nanocrystals throughout the visible spectrum makes them an extremely promising material for light-emitting applications. Whereas high quantum yields and long-term colloidal stability have already been achieved for nanocrystals emitting in the red and green spectral range, the blue region currently lags behind, with low quantum yields, broad emission… ▽ More The easily tunable emission of halide perovskite nanocrystals throughout the visible spectrum makes them an extremely promising material for light-emitting applications. Whereas high quantum yields and long-term colloidal stability have already been achieved for nanocrystals emitting in the red and green spectral range, the blue region currently lags behind, with low quantum yields, broad emission profiles and insufficient colloidal stability. In this work, we present a facile synthetic approach for obtaining two-dimensional CsPbBr3 nanoplatelets with monolayer-precise control over their thickness, resulting in sharp photoluminescence and electroluminescence peaks with a tunable emission wavelength between 432 and 497 nm due to quantum confinement. Subsequent addition of a PbBr2-ligand solution repairs surface defects likely stemming from bromide and lead vacancies in a sub-ensemble of weakly emissive nanoplatelets. The overall photoluminescence quantum yield of the blue-emissive colloidal dispersions is consequently enhanced up to a value of 73+-2 %. Transient optical spectroscopy measurements focusing on the excitonic resonances further confirm the proposed repair process. Additionally, the high stability of these nanoplatelets in films and to prolonged UV light exposure is shown. △ Less

Submitted 27 October, 2020; originally announced October 2020.

Journal ref: Nano Letters 2018, 18, 8, 5231

Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors

Authors: Mari Napari, Tahmida N. Huq, David J. Meeth, Mikko J. Heikkilä, Kham M. Niang, Han Wang, Tomi Iivonen, Haiyan Wang, Markku Leskelä, Mikko Ritala, Andrew J. Flewitt, Robert L. Z. Hoye, Judith L. MacManus-Driscol

Abstract: High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a th… ▽ More High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a thin ALD Al2O3 passivation layer on the Cu2O channel, followed by vacuum annealing at 300 C. Detailed characterisation by TEM-EDX and XPS shows that the surface of Cu2O is reduced following Al2O3 deposition and indicates the formation of 1-2 nm thick CuAlO2 interfacial layer. This, together with field-effect passivation caused by the high negative fixed charge of the ALD Al2O3, leads to an improvement in the TFT performance by reducing the density of deep trap states as well as by reducing the accumulation of electrons in the semiconducting layer in the device off-state. △ Less

Submitted 21 October, 2020; originally announced October 2020.

Comments: 25 pages, 6 figures, full paper

Perovskite-Inspired Materials for Photovoltaics -- From Design to Devices

Authors: Yi-Teng Huang, Sean R. Kavanagh, David O. Scanlon, Aron Walsh, Robert L. Z. Hoye

Abstract: Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready so… ▽ More Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready solubility in water are concerns for widespread implementation. These challenges, alongside the many successes of the perovskites, have motivated significant efforts across multiple disciplines to find lead-free and stable alternatives which could mimic the ability of the perovskites to achieve high performance with low temperature, facile fabrication methods. This Review discusses the computational and experimental approaches that have been taken to discover lead-free perovskite-inspired materials, and the recent successes and challenges in synthesizing these compounds. The atomistic origins of the extraordinary performance exhibited by lead-halide perovskites in photovoltaic devices is discussed, alongside the key challenges in engineering such high-performance in alternative, next-generation materials. Beyond photovoltaics, this Review discusses the impact perovskite-inspired materials have had in spurring efforts to apply new materials in other optoelectronic applications, namely light-emitting diodes, photocatalysts, radiation detectors, thin film transistors and memristors. Finally, the prospects and key challenges faced by the field in advancing the development of perovskite-inspired materials towards realization in commercial devices is discussed. △ Less

Submitted 20 August, 2020; originally announced August 2020.

Journal ref: Nanotechnology 32 132004 (2021)

Bandgap Lowering in Mixed Alloys of Cs2Ag(SbxBi1-x)Br6 Double Perovskite Thin Films

Authors: Zewei Li, Sean Kavanagh, Mari Napari, Robert G. Palgrave, Mojtaba Abdi-Jalebi, Zahra Andaji-Garmaroudi, Daniel W. Davies, Mikko Laitinen, Jaakko Julin, Richard H. Friend, David O. Scanlon, Aron Walsh, Robert L. Z. Hoye

Abstract: Halide double perovskites have gained significant attention, owing to their composition of low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double perovskites, including Cs2AgBiBr6, have wide bandgaps, which limit photo conversion efficiencies. The bandgap can be reduced through hallowing with Sb3+, but Sb-rich alloys are difficult to synthesise due to the h… ▽ More Halide double perovskites have gained significant attention, owing to their composition of low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double perovskites, including Cs2AgBiBr6, have wide bandgaps, which limit photo conversion efficiencies. The bandgap can be reduced through hallowing with Sb3+, but Sb-rich alloys are difficult to synthesise due to the high formation energy of Cs2AgSbBr6, which itself has a wide bandgap. We develop a solution-based route to synthesis phase-pure Cs2Ag(SbxBi1-x)Br6 thin films, with the mixing parameter x continuous varying over the entire composition range. We reveal that the mixed alloys (x between 0.5 and 0.9) demonstrate smaller bandgaps (as low as 2.08 eV) than the pure Sb- (2.18 eV) and Bi-based (2.25 eV) compounds, with strong deviation from Vegard's law. Through in-depth computations, we propose that bandgap lowering arises from the Type II band alignment between Cs2AgBiBr6 and Cs2AgSbBr6. The energy mismatch between the Bi and Sb s and p atomic orbitals, coupled with their non-linear mixing, results in the alloys adopting a smaller bandgap than the pure compounds. Our work demonstrates an approach to achieve bandgap reduction and highlights that bandgap bowing may be found in other double perovskite alloys by pairing together materials forming a Type II band alignment. △ Less

Submitted 1 July, 2020; originally announced July 2020.

Comments: 28 pages, 4 figures

Journal ref: J. Mater. Chem. A, 2020,8, 21780-21788

Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices

Authors: Robert A. Jagt, Tahmida N. Huq, Sam A. Hill, Maung Thway, Tianyuan Liu, Mari Napari, Bart Roose, Krzysztof Gałkowsk, Weiwei Li, Serena Fen Lin, Samuel D. Stranks, Judith L. MacManus-Driscoll, Robert L. Z. Hoye

Abstract: Perovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer layer, which protects the PSC against damage when the transparent electrode is sputtered on top. The development of n-i-p structured semi-transparent PSCs has be… ▽ More Perovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer layer, which protects the PSC against damage when the transparent electrode is sputtered on top. The development of n-i-p structured semi-transparent PSCs has been hampered by the lack of suitable p-type buffer layers. In this work we develop a p-type CuOx buffer layer, which can be grown uniformly over the perovskite device without damaging the perovskite or organic charge transport layers, can be grown using industrially scalable techniques and has high hole mobility (4.3 +/- 2 cm2 V-1 s-1), high transmittance (>95%), and a suitable ionisation potential for hole extraction (5.3 +/- 0.2 eV). Semi-transparent PSCs with efficiencies up to 16.7% are achieved using the CuOx buffer layer. Our work demonstrates a new approach to integrate PSCs into tandem configurations, as well as enable the development of other devices that need high quality p-type layers. △ Less

Submitted 21 January, 2020; originally announced January 2020.

Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides

Authors: Ravi D. Raninga, Robert A. Jagt, Solène Béchu, Tahmida N. Huq, Mark Nikolka, Yen-Hung Lin, Mengyao Sun, Zewei Li, Wen Li, Muriel Bouttemy, Mathieu Frégnaux, Henry J. Snaith, Philip Schulz, Judith L. MacManus-Driscoll, Robert L. Z. Hoye

Abstract: Thin (approximately 10 nm) oxide buffer layers grown over lead-halide perovskite device stacks are critical for protecting the perovskite against mechanical and environmental damage. However, the limited perovskite stability restricts the processing methods and temperatures (<=110 C) that can be used to deposit the oxide overlayers, with the latter limiting the electronic properties of the oxides… ▽ More Thin (approximately 10 nm) oxide buffer layers grown over lead-halide perovskite device stacks are critical for protecting the perovskite against mechanical and environmental damage. However, the limited perovskite stability restricts the processing methods and temperatures (<=110 C) that can be used to deposit the oxide overlayers, with the latter limiting the electronic properties of the oxides achievable. In this work, we demonstrate an alternative to existing methods that can grow pinhole-free TiOx (x = 2.00+/-0.05) films with the requisite thickness in <1 min without vacuum. This technique is atmospheric pressure chemical vapor deposition (AP-CVD). The rapid but soft deposition enables growth temperatures of >=180 °C to be used to coat the perovskite. This is >=70 °C higher than achievable by current methods and results in more conductive TiOx films, boosting solar cell efficiencies by >2%. Likewise, when AP-CVD SnOx (x ~ 2) is grown on perovskites, there is also minimal damage to the perovskite beneath. The SnOx layer is pinhole-free and conformal, which reduces shunting in devices, and increases steady-state efficiencies from 16.5% (no SnOx) to 19.4% (60 nm SnOx), with fill factors reaching 84%. This work shows AP-CVD to be a versatile technique for growing oxides on thermally-sensitive materials. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Comments: R.D.R and R.A.J contributed equally. 23 pages. 6 figures

Origin of Improved Photoelectrochemical Water Splitting in Mixed Perovskite Oxides

Authors: Weiwei Li, Kai Jiang, Zhongguo Li, Shijing Gong, Robert L. Z. Hoye, Zhigao Hu, Yinglin Song, Chuanmu Tian, Jongkyoung Kim, Kelvin H. L. Zhang, Seungho Cho, Judith L. MacManus-Driscoll

Abstract: Owing to the versatility in their chemical and physical properties, transition metal perovskite oxides have emerged as a new category of highly efficient photocatalysts for photoelectrochemical water splitting. Here, to understand the underlying mechanism for the enhanced photoelectrochemical water splitting in mixed perovskites, we explore ideal epitaxial thin films of the BiFeO3-SrTiO3 system. T… ▽ More Owing to the versatility in their chemical and physical properties, transition metal perovskite oxides have emerged as a new category of highly efficient photocatalysts for photoelectrochemical water splitting. Here, to understand the underlying mechanism for the enhanced photoelectrochemical water splitting in mixed perovskites, we explore ideal epitaxial thin films of the BiFeO3-SrTiO3 system. The electronic struture and carrier dynamics are determined from both experiment and density-functional theory calculations. The intrinsic phenomena are measured in this ideal sytem, contrasting to commonly studied polycrstalline solid solutions where extrinsic structural features obscure the intrinsic phenomena. We determined that when SrTiO3 is added to BiFeO3 the conduction band minimum position is raised and an exponential tail of trap states from hybridized Ti 3d and Fe 3d orbitals emerges near the conduction band edge. The presence of these trap states strongly suppresses the fast electron-hole recombination and improves the photocurrent density in the visible-light region, up to 16 times at 0 VRHE compared to the pure end member compositions. Our work provides a new design approach for optimising the photoelectrochemical performance in mixed perovksite oxides. △ Less

Submitted 24 September, 2018; originally announced September 2018.

Comments: 7 pages and 5 figures

Journal ref: Advanced Energy Materials, 2018