Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture
Authors:
Jian Zhang,
Oliver Braun,
Gabriela Borin Barin,
Sara Sangtarash,
Jan Overbeck,
Rimah Darawish,
Michael Stiefel,
Roman Furrer,
Antonis Olziersky,
Klaus Müllen,
Ivan Shorubalko,
Abdalghani H. S. Daaoub,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such…
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Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-gate FET geometry, consisting of an ultra-narrow finger gate and two side gates. We use high-resolution electron-beam lithography (EBL) for defining finger gates as narrow as 12 nm and combine them with graphene electrodes for contacting the GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond patterns, suggesting that the GNRs form QDs that are connected both in series and in parallel. Moreover, we show that the additional gates enable differential tuning of the QDs in the nanojunction, providing the first step towards multi-gate control of GNR-based multi-dot systems.
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Submitted 27 October, 2022; v1 submitted 7 October, 2022;
originally announced October 2022.
Ultimately-scaled electrodes for contacting individual atomically-precise graphene nanoribbons
Authors:
Jian Zhang,
Liu Qian,
Gabriela Borin Barin,
Abdalghani H. S. Daaoub,
Peipei Chen,
Klaus Müllen,
Sara Sangtarash,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
Jin Zhang,
Michel Calame,
Mickael L. Perrin
Abstract:
Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting in…
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Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting individual GNRs remains challenging due to their nanometer-sized width and length as well as their high density on the metallic growth substrate. Here, we demonstrate the contacting and electrical characterization of individual GNRs in a multi-gate device architecture using single-walled carbon nanotubes (SWNTs) as ultimately-scaled electrodes. The GNR-SWNT devices exhibit well-defined quantum transport phenomena, including Coulomb blockade, excited states, and Franck-Condon blockade, all characteristics pointing towards the contacting of an individual GNR. Combined with the multi-gate architecture, this contacting method opens a road for the integration of GNRs in quantum devices to exploit their topologically trivial and non-trivial nature.
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Submitted 9 September, 2022;
originally announced September 2022.
