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Atom-wise formulation of the many-body dispersion problem for linear-scaling van der Waals corrections
Authors:
Heikki Muhli,
Tapio Ala-Nissila,
Miguel A. Caro
Abstract:
A common approach to modeling dispersion interactions and overcoming the inaccurate description of long-range correlation effects in electronic structure calculations is the use of pairwise-additive potentials, as in the Tkatchenko-Scheffler [Phys. Rev. Lett. 102, 073005 (2009)] method. In previous work [Phys. Rev. B 104, 054106 (2021)], we have shown how these are amenable to highly efficient ato…
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A common approach to modeling dispersion interactions and overcoming the inaccurate description of long-range correlation effects in electronic structure calculations is the use of pairwise-additive potentials, as in the Tkatchenko-Scheffler [Phys. Rev. Lett. 102, 073005 (2009)] method. In previous work [Phys. Rev. B 104, 054106 (2021)], we have shown how these are amenable to highly efficient atomistic simulation by machine learning their local parametrization. However, the atomic polarizability and the electron correlation energy have a complex and non-local many-body character and some of the dispersion effects in complex systems are not sufficiently described by these types of pairwise-additive potentials. Currently, one of the most widely used rigorous descriptions of the many-body effects is based on the many-body dispersion (MBD) model [Phys. Rev. Lett. 108, 236402 (2012)]. In this work, we show that the MBD model can also be locally parametrized to derive a local approximation for the highly non-local many-body effects. With this local parametrization, we develop an atom-wise formulation of MBD that we refer to as linear MBD (lMBD), as this decomposition enables linear scaling with system size. This model provides a transparent and controllable approximation to the full MBD model with tunable convergence parameters for a fraction of the computational cost observed in electronic structure calculations with popular density-functional theory codes. We show that our model scales linearly with the number of atoms in the system and is easily parallelizable. Furthermore, we show how using the same machinery already established in previous work for predicting Hirshfeld volumes with machine learning enables access to large-scale simulations with MBD-level corrections.
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Submitted 8 July, 2024;
originally announced July 2024.
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Anomalous Enhancement of the Electrocatalytic Hydrogen Evolution Reaction in AuPt Nanoclusters
Authors:
Jiahui Kang,
Jan Kloppenburg,
Jiali Sheng,
Zhenyu Xu,
Kristoffer Meinander,
Hua Jiang,
Zhong-Peng Lv,
Esko I. Kauppinen,
Qiang Zhang,
Xi Chen,
Olli Ikkala,
Miguel A. Caro,
Bo Peng
Abstract:
Energy- and resource-efficient electrocatalytic water splitting is of paramount importance to enable sustainable hydrogen production. The best bulk catalyst for the hydrogen evolution reaction (HER), i.e., platinum, is one of the scarcest elements on Earth. The use of raw material for HER can be dramatically reduced by utilizing nanoclusters. In addition, nanoalloying can further improve the perfo…
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Energy- and resource-efficient electrocatalytic water splitting is of paramount importance to enable sustainable hydrogen production. The best bulk catalyst for the hydrogen evolution reaction (HER), i.e., platinum, is one of the scarcest elements on Earth. The use of raw material for HER can be dramatically reduced by utilizing nanoclusters. In addition, nanoalloying can further improve the performance of these nanoclusters. In this paper, we present results for HER on nanometer-sized ligand-free AuPt nanoclusters grafted on carbon nanotubes. These results demonstrate excellent monodispersity and a significant reduction of the overpotential for the electrocatalytic HER. We utilize atomistic machine learning techniques to elucidate the atomic-scale origin of the synergistic effect between Pt and Au. We show that the presence of surface Au atoms, known to be poor HER catalysts, in a Pt(core)/AuPt(shell) nanocluster structure, drives an anomalous enhancement of the inherently high catalytic activity of Pt atoms.
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Submitted 12 June, 2024;
originally announced June 2024.
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Syngas conversion to higher alcohols via wood-framed Cu/Co-carbon catalyst
Authors:
Guihua Yan,
Paulina Pršlja,
Gaofeng Chen,
Jiahui Kang,
Yongde Liu,
Miguel A. Caro,
Xi Chen,
Xianhai Zeng,
Bo Peng
Abstract:
Syngas conversion into higher alcohols represents a promising avenue for transforming coal or biomass into liquid fuels. However, the commercialization of this process has been hindered by the high cost, low activity, and inadequate C$_{2+}$OH selectivity of catalysts. Herein, we have developed Cu/Co carbon wood catalysts, offering a cost-effective and stable alternative with exceptional selectivi…
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Syngas conversion into higher alcohols represents a promising avenue for transforming coal or biomass into liquid fuels. However, the commercialization of this process has been hindered by the high cost, low activity, and inadequate C$_{2+}$OH selectivity of catalysts. Herein, we have developed Cu/Co carbon wood catalysts, offering a cost-effective and stable alternative with exceptional selectivity for catalytic conversion. The formation of Cu/Co nanoparticles was found, influenced by water-1,2-propylene glycol ratios in the solution, resulting in bidisperse nanoparticles. The catalyst exhibited a remarkable CO conversion rate of 74.8% and a selectivity of 58.7% for C$_{2+}$OH, primarily comprising linear primary alcohols. This catalyst demonstrated enduring stability and selectivity under industrial conditions, maintaining its efficacy for up to 350 h of operation. We also employed density functional theory (DFT) to analyze selectivity, particularly focusing on the binding strength of CO, a crucial precursor for subsequent reactions leading to the formation of CH$_3$OH. DFT identified the pathway of CH$_x$ and CO coupling, ultimately yielding C$_2$H$_5$OH. This computational understanding, coupled with high performance of the Cu/Co-carbon wood catalyst, paves ways for the development of catalytically selective materials tailored for higher alcohols production, thereby ushering in new possibility in this field.
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Submitted 24 May, 2024;
originally announced May 2024.
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Accelerated First-Principles Exploration of Structure and Reactivity in Graphene Oxide
Authors:
Zakariya El-Machachi,
Damyan Frantzov,
A. Nijamudheen,
Tigany Zarrouk,
Miguel A. Caro,
Volker L. Deringer
Abstract:
Graphene oxide (GO) materials are widely studied, and yet their atomic-scale structures remain to be fully understood. Here we show that the chemical and configurational space of GO can be rapidly explored by advanced machine-learning methods, combining on-the-fly acceleration for first-principles molecular dynamics with message-passing neural-network potentials. The first step allows for the rapi…
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Graphene oxide (GO) materials are widely studied, and yet their atomic-scale structures remain to be fully understood. Here we show that the chemical and configurational space of GO can be rapidly explored by advanced machine-learning methods, combining on-the-fly acceleration for first-principles molecular dynamics with message-passing neural-network potentials. The first step allows for the rapid sampling of chemical structures with very little prior knowledge required; the second step affords state-of-the-art accuracy and predictive power. We apply the method to the thermal reduction of GO, which we describe in a realistic (ten-nanometre scale) structural model. Our simulations are consistent with recent experimental findings and help to rationalise them in atomistic and mechanistic detail. More generally, our work provides a platform for routine, accurate, and predictive simulations of diverse carbonaceous materials.
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Submitted 23 May, 2024;
originally announced May 2024.
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Experiment-driven atomistic materials modeling: A case study combining X-ray photoelectron spectroscopy and machine learning potentials to infer the structure of oxygen-rich amorphous carbon
Authors:
Tigany Zarrouk,
Rina Ibragimova,
Albert P. Bartók,
Miguel A. Caro
Abstract:
An important yet challenging aspect of atomistic materials modeling is reconciling experimental and computational results. Conventional approaches involve generating numerous configurations through molecular dynamics or Monte Carlo structure optimization and selecting the one with the closest match to experiment. However, this inefficient process is not guaranteed to succeed. We introduce a genera…
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An important yet challenging aspect of atomistic materials modeling is reconciling experimental and computational results. Conventional approaches involve generating numerous configurations through molecular dynamics or Monte Carlo structure optimization and selecting the one with the closest match to experiment. However, this inefficient process is not guaranteed to succeed. We introduce a general method to combine atomistic machine learning (ML) with experimental observables that produces atomistic structures compatible with experiment by design. We use this approach in combination with grand-canonical Monte Carlo within a modified Hamiltonian formalism, to generate configurations that agree with experimental data and are chemically sound (low in energy). We apply our approach to understand the atomistic structure of oxygenated amorphous carbon (a-CO$_{x}$), an intriguing carbon-based material, to answer the question of how much oxygen can be added to carbon before it fully decomposes into CO and CO$_2$. Utilizing an ML-based X-ray photoelectron spectroscopy (XPS) model trained from $GW$ and density functional theory (DFT) data, in conjunction with an ML interatomic potential, we identify a-CO$_{x}$ structures compliant with experimental XPS predictions that are also energetically favorable with respect to DFT. Employing a network analysis, we accurately deconvolve the XPS spectrum into motif contributions, both revealing the inaccuracies inherent to experimental XPS interpretation and granting us atomistic insight into the structure of a-CO$_{x}$. This method generalizes to multiple experimental observables and allows for the elucidation of the atomistic structure of materials directly from experimental data, thereby enabling experiment-driven materials modeling with a degree of realism previously out of reach.
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Submitted 20 May, 2024; v1 submitted 5 February, 2024;
originally announced February 2024.
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Gaussian Approximation Potentials: theory, software implementation and application examples
Authors:
Sascha Klawohn,
Gábor Csányi,
James P. Darby,
James R. Kermode,
Miguel A. Caro,
Albert P. Bartók
Abstract:
Gaussian Approximation Potentials are a class of Machine Learned Interatomic Potentials routinely used to model materials and molecular systems on the atomic scale. The software implementation provides the means for both fitting models using ab initio data and using the resulting potentials in atomic simulations. Details of the GAP theory, algorithms and software are presented, together with detai…
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Gaussian Approximation Potentials are a class of Machine Learned Interatomic Potentials routinely used to model materials and molecular systems on the atomic scale. The software implementation provides the means for both fitting models using ab initio data and using the resulting potentials in atomic simulations. Details of the GAP theory, algorithms and software are presented, together with detailed usage examples to help new and existing users. We review some recent developments to the GAP framework, including MPI parallelisation of the fitting code enabling its use on thousands of CPU cores and compression of descriptors to eliminate the poor scaling with the number of different chemical elements.
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Submitted 5 October, 2023;
originally announced October 2023.
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Searching for iron nanoparticles with a general-purpose Gaussian approximation potential
Authors:
Richard Jana,
Miguel A. Caro
Abstract:
We present a general-purpose machine learning Gaussian approximation potential (GAP) for iron that is applicable to all bulk crystal structures found experimentally under diverse thermodynamic conditions, as well as surfaces and nanoparticles (NPs). By studying its phase diagram, we show that our GAP remains stable at extreme conditions, including those found in the Earth's core. The new GAP is pa…
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We present a general-purpose machine learning Gaussian approximation potential (GAP) for iron that is applicable to all bulk crystal structures found experimentally under diverse thermodynamic conditions, as well as surfaces and nanoparticles (NPs). By studying its phase diagram, we show that our GAP remains stable at extreme conditions, including those found in the Earth's core. The new GAP is particularly accurate for the description of NPs. We use it to identify new low-energy NPs, whose stability is verified by performing density functional theory calculations on the GAP structures. Many of these NPs are lower in energy than those previously available in the literature up to $N_\text{atoms}=100$. We further extend the convex hull of available stable structures to $N_\text{atoms}=200$. For these NPs, we study characteristic surface atomic motifs using data clustering and low-dimensional embedding techniques. With a few exceptions, e.g., at magic numbers $N_\text{atoms}=59$, $65$, $76$ and $78$, we find that iron tends to form irregularly shaped NPs without a dominant surface character or characteristic atomic motif, and no reminiscence of crystalline features. We hypothesize that the observed disorder stems from an intricate balance and competition between the stable bulk motif formation, with bcc structure, and the stable surface motif formation, with fcc structure. We expect these results to improve our understanding of the fundamental properties and structure of low-dimensional forms of iron, and to facilitate future work in the field of iron-based catalysis.
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Submitted 22 June, 2023; v1 submitted 27 February, 2023;
originally announced February 2023.
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A general-purpose machine learning Pt interatomic potential for an accurate description of bulk, surfaces and nanoparticles
Authors:
Jan Kloppenburg,
Livia B. Pártay,
Hannes Jónsson,
Miguel A. Caro
Abstract:
A Gaussian approximation machine learning interatomic potential for platinum is presented. It has been trained on DFT data computed for bulk, surfaces and nanostructured platinum, in particular nanoparticles. Across the range of tested properties, which include bulk elasticity, surface energetics and nanoparticle stability, this potential shows excellent transferability and agreement with DFT, pro…
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A Gaussian approximation machine learning interatomic potential for platinum is presented. It has been trained on DFT data computed for bulk, surfaces and nanostructured platinum, in particular nanoparticles. Across the range of tested properties, which include bulk elasticity, surface energetics and nanoparticle stability, this potential shows excellent transferability and agreement with DFT, providing state-of-the-art accuracy at low computational cost. We showcase the possibilities for modeling of Pt systems enabled by this potential with two examples: the pressure-temperature phase diagram of Pt calculated using nested sampling and a study of the spontaneous crystallization of a large Pt nanoparticle based on classical dynamics simulations over several nanoseconds.
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Submitted 5 April, 2023; v1 submitted 27 January, 2023;
originally announced January 2023.
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Tensor-reduced atomic density representations
Authors:
James P. Darby,
Dávid P. Kovács,
Ilyes Batatia,
Miguel A. Caro,
Gus L. W. Hart,
Christoph Ortner,
Gábor Csányi
Abstract:
Density based representations of atomic environments that are invariant under Euclidean symmetries have become a widely used tool in the machine learning of interatomic potentials, broader data-driven atomistic modelling and the visualisation and analysis of materials datasets.The standard mechanism used to incorporate chemical element information is to create separate densities for each element a…
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Density based representations of atomic environments that are invariant under Euclidean symmetries have become a widely used tool in the machine learning of interatomic potentials, broader data-driven atomistic modelling and the visualisation and analysis of materials datasets.The standard mechanism used to incorporate chemical element information is to create separate densities for each element and form tensor products between them. This leads to a steep scaling in the size of the representation as the number of elements increases. Graph neural networks, which do not explicitly use density representations, escape this scaling by mapping the chemical element information into a fixed dimensional space in a learnable way. We recast this approach as tensor factorisation by exploiting the tensor structure of standard neighbour density based descriptors. In doing so, we form compact tensor-reduced representations whose size does not depend on the number of chemical elements, but remain systematically convergeable and are therefore applicable to a wide range of data analysis and regression tasks.
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Submitted 6 December, 2022; v1 submitted 1 October, 2022;
originally announced October 2022.
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Machine learning based modeling of disordered elemental semiconductors: understanding the atomic structure of a-Si and a-C
Authors:
Miguel A. Caro
Abstract:
Disordered elemental semiconductors, most notably a-C and a-Si, are ubiquitous in a myriad of different applications. These exploit their unique mechanical and electronic properties. In the past couple of decades, density functional theory (DFT) and other quantum mechanics-based computational simulation techniques have been successful at delivering a detailed understanding of the atomic and electr…
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Disordered elemental semiconductors, most notably a-C and a-Si, are ubiquitous in a myriad of different applications. These exploit their unique mechanical and electronic properties. In the past couple of decades, density functional theory (DFT) and other quantum mechanics-based computational simulation techniques have been successful at delivering a detailed understanding of the atomic and electronic structure of crystalline semiconductors. Unfortunately, the complex structure of disordered semiconductors sets the time and length scales required for DFT simulation of these materials out of reach. In recent years, machine learning (ML) approaches to atomistic modeling have been developed that provide an accurate approximation of the DFT potential energy surface for a small fraction of the computational time. These ML approaches have now reached maturity and are starting to deliver the first conclusive insights into some of the missing details surrounding the intricate atomic structure of disordered semiconductors. In this Topical Review we give a brief introduction to ML atomistic modeling and its application to amorphous semiconductors. We then take a look at how ML simulations have been used to improve our current understanding of the atomic structure of a-C and a-Si.
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Submitted 11 March, 2023; v1 submitted 15 September, 2022;
originally announced September 2022.
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Cluster-based multidimensional scaling embedding tool for data visualization
Authors:
Patricia Hernández-León,
Miguel A. Caro
Abstract:
We present a new technique for visualizing high-dimensional data called cluster MDS (cl-MDS), which addresses a common difficulty of dimensionality reduction methods: preserving both local and global structures of the original sample in a single 2-dimensional visualization. Its algorithm combines the well-known multidimensional scaling (MDS) tool with the $k$-medoids data clustering technique, and…
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We present a new technique for visualizing high-dimensional data called cluster MDS (cl-MDS), which addresses a common difficulty of dimensionality reduction methods: preserving both local and global structures of the original sample in a single 2-dimensional visualization. Its algorithm combines the well-known multidimensional scaling (MDS) tool with the $k$-medoids data clustering technique, and enables hierarchical embedding, sparsification and estimation of 2-dimensional coordinates for additional points. While cl-MDS is a generally applicable tool, we also include specific recipes for atomic structure applications. We apply this method to non-linear data of increasing complexity where different layers of locality are relevant, showing a clear improvement in their retrieval and visualization quality.
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Submitted 24 May, 2024; v1 submitted 14 September, 2022;
originally announced September 2022.
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Quantum-corrected thickness-dependent thermal conductivity in amorphous silicon predicted by machine-learning molecular dynamics simulations
Authors:
Yanzhou Wang,
Zheyong Fan,
Ping Qian,
Miguel A. Caro,
Tapio Ala-Nissila
Abstract:
Amorphous silicon (a-Si) is an important thermal-management material and also serves as an ideal playground for studying heat transport in strongly disordered materials. Theoretical prediction of the thermal conductivity of a-Si in a wide range of temperatures and sample sizes is still a challenge. Herein we present a systematic investigation of the thermal transport properties of a-Si by employin…
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Amorphous silicon (a-Si) is an important thermal-management material and also serves as an ideal playground for studying heat transport in strongly disordered materials. Theoretical prediction of the thermal conductivity of a-Si in a wide range of temperatures and sample sizes is still a challenge. Herein we present a systematic investigation of the thermal transport properties of a-Si by employing large-scale molecular dynamics (MD) simulations with an accurate and efficient machine-learned neuroevolution potential (NEP) trained against abundant reference data calculated at the quantum-mechanical density-functional-theory level. The high efficiency of NEP allows us to study the effects of finite size and quenching rate in the formation of a-Si in great detail. We find that it requires a simulation cell up to $64,000$ atoms (a cubic cell with a linear size of 11 nm) and a quenching rate down to $10^{11}$ K s$^{-1}$ for fully convergent thermal conductivity. Structural properties, including short- and medium-range order as characterized by the pair correlation function, angular distribution function, coordination number, ring statistics and structure factor are studied to demonstrate the accuracy of NEP and to further evaluate the role of quenching rate. Using both the heterogeneous and the homogeneous nonequilibrium MD methods and the related spectral decomposition techniques, we calculate the temperature- and thickness-dependent thermal conductivity values of a-Si and show that they agree well with available experimental results from 10 K to room temperature. Our results also highlight the importance of quantum effects in the calculated thermal conductivity and support the quantum correction method based on the spectral thermal conductivity.
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Submitted 9 January, 2023; v1 submitted 15 June, 2022;
originally announced June 2022.
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Reassignment of magic numbers for icosahedral Au clusters: 310, 564, 928 and 1426
Authors:
Jan Kloppenburg,
Andreas Pedersen,
Kari Laasonen,
Miguel A. Caro,
Hannes Jónsson
Abstract:
Icosahedral Au clusters with three and four shells of atoms are found to deviate significantly from the commonly assumed Mackay structures. By introducing additional atoms in the surface shell and creating a vacancy in the center of the cluster, the calculated energy per atom can be lowered significantly, according to several different descriptions of the interatomic interaction. Analogous icosahe…
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Icosahedral Au clusters with three and four shells of atoms are found to deviate significantly from the commonly assumed Mackay structures. By introducing additional atoms in the surface shell and creating a vacancy in the center of the cluster, the calculated energy per atom can be lowered significantly, according to several different descriptions of the interatomic interaction. Analogous icosahedral structures with five and six shells of atoms are generated using the same structural motifs and are similarly found to be more stable than Mackay icosahedra. The lowest energy per atom is obtained with clusters containing 310, 564, 928 and 1426 atoms, as compared with the commonly assumed magic numbers of 309, 561, 923 and 1415. Some of the vertices in the optimized clusters have a hexagonal ring of atoms, rather than a pentagon, with the vertex atom missing. An inner shell atom in some cases moves outwards by more than an Ångström into the surface shell at the vertex site. This feature, as well as the wide distribution of nearest-neighbor distances in the surface layer, can strongly influence the catalytic properties of icosahedral clusters. The structural optimization is initially carried out using the GOUST method with atomic forces estimated with the EMT empirical potential function, but the atomic coordinates are then refined by minimization using electron density functional theory (DFT) or Gaussian approximation potential (GAP). A single energy barrier is found to separate the Mackay icosahedron from a lower energy structure where a string of atoms moves outwards in a concerted manner from the center so as to create a central vacancy while placing an additional atom in the surface shell.
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Submitted 31 March, 2022;
originally announced March 2022.
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Accurate computational prediction of core-electron binding energies in carbon-based materials: A machine-learning model combining density-functional theory and $\boldsymbol{GW}$
Authors:
Dorothea Golze,
Markus Hirvensalo,
Patricia Hernández-León,
Anja Aarva,
Jarkko Etula,
Toma Susi,
Patrick Rinke,
Tomi Laurila,
Miguel A. Caro
Abstract:
We present a quantitatively accurate machine-learning (ML) model for the computational prediction of core-electron binding energies, from which x-ray photoelectron spectroscopy (XPS) spectra can be readily obtained. Our model combines density functional theory (DFT) with $GW$ and uses kernel ridge regression for the ML predictions. We apply the new approach to materials and molecules containing ca…
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We present a quantitatively accurate machine-learning (ML) model for the computational prediction of core-electron binding energies, from which x-ray photoelectron spectroscopy (XPS) spectra can be readily obtained. Our model combines density functional theory (DFT) with $GW$ and uses kernel ridge regression for the ML predictions. We apply the new approach to materials and molecules containing carbon, hydrogen and oxygen, and obtain qualitative and quantitative agreement with experiment, resolving spectral features within 0.1 eV of reference experimental spectra. The method only requires the user to provide a structural model for the material under study to obtain an XPS prediction within seconds. Our new tool is freely available online through the XPS Prediction Server.
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Submitted 13 July, 2022; v1 submitted 13 December, 2021;
originally announced December 2021.
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Structure and Pore Size Distribution in Nanoporous Carbon
Authors:
Yanzhou Wang,
Zheyong Fan,
Ping Qian,
Tapio Ala-Nissila,
Miguel A. Caro
Abstract:
We study the structural and mechanical properties of nanoporous (NP) carbon materials by extensive atomistic machine-learning (ML) driven molecular dynamics (MD) simulations. To this end, we retrain a ML Gaussian approximation potential (GAP) for carbon by recalculating the a-C structural database of Deringer and Csányi [Phys. Rev. B 2017, 95, 094203] adding van der Waals interactions. Our GAP ena…
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We study the structural and mechanical properties of nanoporous (NP) carbon materials by extensive atomistic machine-learning (ML) driven molecular dynamics (MD) simulations. To this end, we retrain a ML Gaussian approximation potential (GAP) for carbon by recalculating the a-C structural database of Deringer and Csányi [Phys. Rev. B 2017, 95, 094203] adding van der Waals interactions. Our GAP enables a notable speedup and improves the accuracy of energy and force predictions. We use the GAP to thoroughly study the atomistic structure and pore-size distribution in computational NP carbon samples. These samples are generated by a melt-graphitization-quench MD procedure over a wide range of densities (from 0.5 to 1.7 g/cm$^3$) with structures containing 131,072 atoms. Our results are in good agreement with experimental data for the available observables, and provide a comprehensive account of structural (radial and angular distribution functions, motif and ring counts, X-ray diffraction patterns, pore characterization) and mechanical (elastic moduli and their evolution with density) properties. Our results show relatively narrow pore-size distributions, where the peak position and width of the distributions are dictated by the mass density of the materials. Our data allow further work on computational characterization of NP carbon materials, in particular for energy-storage applications, as well as suggest future experimental characterization of NP carbon-based materials.
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Submitted 12 December, 2021; v1 submitted 21 September, 2021;
originally announced September 2021.
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Machine learning force fields based on local parametrization of dispersion interactions: Application to the phase diagram of C$_{60}$
Authors:
Heikki Muhli,
Xi Chen,
Albert P. Bartók,
Patricia Hernández-León,
Gábor Csányi,
Tapio Ala-Nissila,
Miguel A. Caro
Abstract:
We present a comprehensive methodology to enable addition of van der Waals (vdW) corrections to machine learning (ML) atomistic force fields. Using a Gaussian approximation potential (GAP) [Bartók et al., Phys. Rev. Lett. 104, 136403 (2010)] as baseline, we accurately machine learn a local model of atomic polarizabilities based on Hirshfeld volume partitioning of the charge density [Tkatchenko and…
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We present a comprehensive methodology to enable addition of van der Waals (vdW) corrections to machine learning (ML) atomistic force fields. Using a Gaussian approximation potential (GAP) [Bartók et al., Phys. Rev. Lett. 104, 136403 (2010)] as baseline, we accurately machine learn a local model of atomic polarizabilities based on Hirshfeld volume partitioning of the charge density [Tkatchenko and Scheffler, Phys. Rev. Lett. 102, 073005 (2009)]. These environment-dependent polarizabilities are then used to parametrize a screened London-dispersion approximation to the vdW interactions. Our ML vdW model only needs to learn the charge density partitioning implicitly, by learning the reference Hirshfeld volumes from density functional theory (DFT). In practice, we can predict accurate Hirshfeld volumes from the knowledge of the local atomic environment (atomic positions) alone, making the model highly computationally efficient. For additional efficiency, our ML model of atomic polarizabilities reuses the same many-body atomic descriptors used for the underlying GAP learning of bonded interatomic interactions. We also show how the method enables straightforward computation of gradients of the observables, even when these remain challenging for the reference method (e.g., calculating gradients of the Hirshfeld volumes in DFT). Finally, we demonstrate the approach by studying the phase diagram of C$_{60}$, where vdW effects are important. The need for a highly accurate vdW-inclusive reactive force field is highlighted by modeling the decomposition of the C$_{60}$ molecules taking place at high pressures and temperatures.
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Submitted 10 August, 2021; v1 submitted 6 May, 2021;
originally announced May 2021.
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Particle Swarm Based Hyper-Parameter Optimization for Machine Learned Interatomic Potentials
Authors:
Suresh Kondati Natarajan,
Miguel A. Caro
Abstract:
Modeling non-empirical and highly flexible interatomic potential energy surfaces (PES) using machine learning (ML) approaches is becoming popular in molecular and materials research. Training an ML-PES is typically performed in two stages: feature extraction and structure-property relationship modeling. The feature extraction stage transforms atomic positions into a symmetry-invariant mathematical…
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Modeling non-empirical and highly flexible interatomic potential energy surfaces (PES) using machine learning (ML) approaches is becoming popular in molecular and materials research. Training an ML-PES is typically performed in two stages: feature extraction and structure-property relationship modeling. The feature extraction stage transforms atomic positions into a symmetry-invariant mathematical representation. This representation can be fine-tuned by adjusting on a set of so-called "hyper-parameters" (HPs). Subsequently, an ML algorithm such as neural networks or Gaussian process regression (GPR) is used to model the structure-PES relationship based on another set of HPs. Choosing optimal values for the two sets of HPs is critical to ensure the high quality of the resulting ML-PES model.
In this paper, we explore HP optimization strategies tailored for ML-PES generation using a custom-coded parallel particle swarm optimizer (available freely at https://github.com/suresh0807/PPSO.git). We employ the smooth overlap of atomic positions (SOAP) descriptor in combination with GPR-based Gaussian approximation potentials (GAP) and optimize HPs for four distinct systems: a toy C dimer, amorphous carbon, $α$-Fe, and small organic molecules (QM9 dataset). We propose a two-step optimization strategy in which the HPs related to the feature extraction stage are optimized first, followed by the optimization of the HPs in the training stage. This strategy is computationally more efficient than optimizing all HPs at the same time by means of significantly reducing the number of ML models needed to be trained to obtain the optimal HPs. This approach can be trivially extended to other combinations of descriptor and ML algorithm and brings us another step closer to fully automated ML-PES generation.
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Submitted 31 December, 2020;
originally announced January 2021.
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Machine learning driven simulated deposition of carbon films: from low-density to diamondlike amorphous carbon
Authors:
Miguel A. Caro,
Gábor Csányi,
Tomi Laurila,
Volker L. Deringer
Abstract:
Amorphous carbon (a-C) materials have diverse interesting and useful properties, but the understanding of their atomic-scale structures is still incomplete. Here, we report on extensive atomistic simulations of the deposition and growth of a-C films, describing interatomic interactions using a machine learning (ML) based Gaussian Approximation Potential (GAP) model. We expand widely on our initial…
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Amorphous carbon (a-C) materials have diverse interesting and useful properties, but the understanding of their atomic-scale structures is still incomplete. Here, we report on extensive atomistic simulations of the deposition and growth of a-C films, describing interatomic interactions using a machine learning (ML) based Gaussian Approximation Potential (GAP) model. We expand widely on our initial work [Phys. Rev. Lett. 120, 166101 (2018)] by now considering a broad range of incident ion energies, thus modeling samples that span the entire range from low-density ($sp^{2}$-rich) to high-density ($sp^{3}$-rich, "diamond-like") amorphous forms of carbon. Two different mechanisms are observed in these simulations, depending on the impact energy: low-energy impacts induce $sp$- and $sp^{2}$-dominated growth directly around the impact site, whereas high-energy impacts induce peening. Furthermore, we propose and apply a scheme for computing the anisotropic elastic properties of the a-C films. Our work provides fundamental insight into this intriguing class of disordered solids, as well as a conceptual and methodological blueprint for simulating the atomic-scale deposition of other materials with ML-driven molecular dynamics.
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Submitted 4 November, 2020; v1 submitted 17 June, 2020;
originally announced June 2020.
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Uniqueness of solutions to Boltzmann Equations
Authors:
Rafael Galeano Andrades,
Mario Almanza Caro
Abstract:
By means of Banach fixed point theorem , the uniqueness of Boltzmann Equation generalizaled Solutions in Sobolev spaces in $L^1(\mathbb{R}^+\times \mathbb{R}^n\times \mathbb{R}^n)$, can be proved as well as Boltzmann Equation renormalized solutions uniqueness
By means of Banach fixed point theorem , the uniqueness of Boltzmann Equation generalizaled Solutions in Sobolev spaces in $L^1(\mathbb{R}^+\times \mathbb{R}^n\times \mathbb{R}^n)$, can be proved as well as Boltzmann Equation renormalized solutions uniqueness
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Submitted 14 June, 2020;
originally announced June 2020.
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Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals
Authors:
Daniel S. P. Tanner,
Miguel A. Caro,
Stefan Schulz,
Eoin P. O'Reilly
Abstract:
Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The methods introduced allow easy derivation of valence force field parameters in terms of the Kleinman parameter $ζ$ and bulk properties of zincblende and diamond crystals. We start with a model suited for covalent and weakl…
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Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The methods introduced allow easy derivation of valence force field parameters in terms of the Kleinman parameter $ζ$ and bulk properties of zincblende and diamond crystals. We start with a model suited for covalent and weakly ionic materials, where the valence force field parameters are derived in terms of $ζ$ and the bulk elastic constants $C_{11}$, $C_{12}$, and $C_{44}$. We show that this model breaks down as the material becomes more ionic and specifically when the elastic anisotropy factor $A = 2C_{44}/(C_{11}-C_{12}) > 2$. The analytic model can be stabilised for ionic materials by including Martin's electrostatic terms with effective cation and anion charges in the valence force field model. Inclusion of effective charges determined via the optical phonon mode splitting provides a stable model for all but two of the materials considered (zincblende GaN and AlN). A stable model is obtained for all materials considered by also utilising the inner elastic constant $E_{11}$ to determine the magnitude of the effective charges used in the Coulomb interaction. Test calculations show that the models describe well structural relaxation in superlattices and alloys, and reproduce key phonon band structure features.
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Submitted 29 August, 2019;
originally announced August 2019.
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Towards the computational experiment
Authors:
Miguel A. Caro
Abstract:
We give a brief account of the current limitations and possibilities in the field of computational simulation of materials. We then focus on the effect that the emergence of machine learning interatomic potentials is having on the field and how it will affect its evolution in the near future.
We give a brief account of the current limitations and possibilities in the field of computational simulation of materials. We then focus on the effect that the emergence of machine learning interatomic potentials is having on the field and how it will affect its evolution in the near future.
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Submitted 28 May, 2019;
originally announced May 2019.
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Optimizing many-body atomic descriptors for enhanced computational performance of machine learning based interatomic potentials
Authors:
Miguel A. Caro
Abstract:
We explore different ways to simplify the evaluation of the smooth overlap of atomic positions (SOAP) many-body atomic descriptor [Bartók et al., Phys. Rev. B 87, 184115 (2013)]. Our aim is to improve the computational efficiency of SOAP-based similarity kernel construction. While these improved atomic descriptors can be used for general characterization and interpolation of atomic properties, the…
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We explore different ways to simplify the evaluation of the smooth overlap of atomic positions (SOAP) many-body atomic descriptor [Bartók et al., Phys. Rev. B 87, 184115 (2013)]. Our aim is to improve the computational efficiency of SOAP-based similarity kernel construction. While these improved atomic descriptors can be used for general characterization and interpolation of atomic properties, their main target application is accelerated evaluation of machine-learning-based interatomic potentials within the Gaussian approximation potential (GAP) framework [Bartók et al., Phys. Rev. Lett. 104, 136403 (2010)]. We achieve this objective by expressing the atomic densities in an approximate separable form, which decouples the radial and angular channels. We then express the elements of the SOAP descriptor (i.e., the expansion coefficients for the atomic densities) in analytical form given a particular choice of radial basis set. Finally, we derive recursion formulas for the expansion coefficients. This new SOAP-based descriptor allows for tenfold speedups compared to previous implementations, while improving the stability of the radial expansion for distant atomic neighbors, without degradation of the interpolation power of GAP models.
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Submitted 13 September, 2019; v1 submitted 6 May, 2019;
originally announced May 2019.
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Hybrid functional study of non-linear elasticity and internal strain in zincblende III-V materials
Authors:
Daniel S. P. Tanner,
Miguel A. Caro,
Stefan Schulz,
Eoin P. O'Reilly
Abstract:
We investigate the elastic properties of selected zincblende III-V semiconductors. Using hybrid functional density functional theory we calculate the second and third order elastic constants, and first and second-order internal strain tensor components for Ga, In and Al containing III-V compounds. For many of these parameters, there are no available experimental measurements, and this work is the…
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We investigate the elastic properties of selected zincblende III-V semiconductors. Using hybrid functional density functional theory we calculate the second and third order elastic constants, and first and second-order internal strain tensor components for Ga, In and Al containing III-V compounds. For many of these parameters, there are no available experimental measurements, and this work is the first to predict their values. The stricter convergence criteria for the calculation of higher order elastic constants are demonstrated, and arguments are made based on this for extracting these constants via the calculated stresses, rather than the energies, in the context of plane-wave-based calculations. The calculated elastic properties are used to determine the strain regime at which higher order elasticity becomes important by comparing the stresses predicted by a lower and a higher order elasticity theory. Finally, the results are compared with available experimental literature data and previous theory.
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Submitted 11 December, 2018;
originally announced December 2018.
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Growth Mechanism and Origin of High $sp^3$ Content in Tetrahedral Amorphous Carbon
Authors:
Miguel A. Caro,
Volker L. Deringer,
Jari Koskinen,
Tomi Laurila,
Gábor Csányi
Abstract:
We study the deposition of tetrahedral amorphous carbon (ta-C) films from molecular dynamics simulations based on a machine-learned interatomic potential trained from density-functional theory data. For the first time, the high $sp^3$ fractions in excess of 85% observed experimentally are reproduced by means of computational simulation, and the deposition energy dependence of the film's characteri…
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We study the deposition of tetrahedral amorphous carbon (ta-C) films from molecular dynamics simulations based on a machine-learned interatomic potential trained from density-functional theory data. For the first time, the high $sp^3$ fractions in excess of 85% observed experimentally are reproduced by means of computational simulation, and the deposition energy dependence of the film's characteristics is also accurately described. High confidence in the potential and direct access to the atomic interactions allow us to infer the microscopic growth mechanism in this material. While the widespread view is that ta-C grows by "subplantation," we show that the so-called "peening" model is actually the dominant mechanism responsible for the high $sp^3$ content. We show that pressure waves lead to bond rearrangement away from the impact site of the incident ion, and high $sp^3$ fractions arise from a delicate balance of transitions between three- and fourfold coordinated carbon atoms. These results open the door for a microscopic understanding of carbon nanostructure formation with an unprecedented level of predictive power.
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Submitted 20 April, 2018;
originally announced April 2018.
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Parametrization of the Tkatchenko-Scheffler dispersion correction scheme for popular exchange-correlation density functionals: effect on the description of liquid water
Authors:
Miguel A. Caro
Abstract:
We present a list of optimized damping range parameters $s_R$ to be used with the Tkatchenko-Scheffler van der Waals dispersion-correction scheme [Phys. Rev. Lett. 102, 073005 (2009)]. The optimal $s_R$ are obtained for seven popular generalized-gradient approximation exchange-correlation density functionals: PBE, RPBE, revPBE, PBEsol, BLYP, AM05 and PW91. The optimization is carried out in the st…
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We present a list of optimized damping range parameters $s_R$ to be used with the Tkatchenko-Scheffler van der Waals dispersion-correction scheme [Phys. Rev. Lett. 102, 073005 (2009)]. The optimal $s_R$ are obtained for seven popular generalized-gradient approximation exchange-correlation density functionals: PBE, RPBE, revPBE, PBEsol, BLYP, AM05 and PW91. The optimization is carried out in the standard way by minimizing the mean absolute error of the S22 test set, where the reference interaction energies are taken from coupled-cluster calculations. With the optimized range parameters, we assess the impact of van der Waals corrections on the ability of these functionals to accurately describe structural and thermodynamic properties of liquid water: radial distribution functions, self-diffusion coefficients and standard molar entropies.
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Submitted 24 April, 2017; v1 submitted 3 April, 2017;
originally announced April 2017.
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Random alloy fluctuations and structural inhomogeneities in $c$-plane In$_{x}$Ga$_{1-x}$N quantum wells: theory of ground and excited electron and hole states
Authors:
Daniel S. P. Tanner,
Miguel A. Caro,
Eoin P. O'Reilly,
Stefan Schulz
Abstract:
We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an atomistic tight-binding model, accounting for variations in strain and built-in field due to random alloy fluctuations. Our analysis reveals strong localisation effects…
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We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an atomistic tight-binding model, accounting for variations in strain and built-in field due to random alloy fluctuations. Our analysis reveals strong localisation effects in the hole states. These effects are found not only in the ground states, but also the excited states. We conclude that localisation effects persist to of order 100~meV into the valence band, for as little as 10\% indium in the quantum well, giving rise to a significant density of localised states. We find, from an examination of the modulus overlap of the wave functions, that the hole states can be divided into three regimes of localisation. Our results also show that localisation effects due to random alloy fluctuations are far less pronounced for electron states. However, the combination of electrostatic built-in field, alloy fluctuations and structural inhomogeneities, such as well-width fluctuations, can nevertheless lead to significant localisation effects in the electron states, especially at higher indium contents. Overall, our results are indicative of individually localised electron and hole states, consistent with the experimentally proposed explanation of time-dependent photoluminescence results in $c$-plane InGaN/GaN QWs.
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Submitted 11 June, 2016;
originally announced June 2016.
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Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
Authors:
S. Schulz,
D. P. Tanner,
E. P. O'Reilly,
M. A. Caro,
T. L. Martin,
P. A. J. Bagot,
M. P. Moody,
F. Tang,
J. T. Griffiths,
F. Oehler,
M. J. Kappers,
R. A. Oliver,
C. J. Humphreys,
D. Sutherland,
M. J. Davies,
P. Dawson
Abstract:
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photo…
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In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.
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Submitted 1 December, 2015; v1 submitted 23 September, 2015;
originally announced September 2015.
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Origin of non-linear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory
Authors:
Miguel A. Caro,
Stefan Schulz,
Eoin P. O'Reilly
Abstract:
We derive first- and second-order piezoelectric coefficients for the zinc-blende III-V semiconductors, {Al,Ga,In}-{N,P,As,Sb}. The results are obtained within the Heyd-Scuseria-Ernzerhof hybrid-functional approach in the framework of density functional theory and the Berry-phase theory of electric polarization. To achieve a meaningful interpretation of the results, we build an intuitive phenomenol…
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We derive first- and second-order piezoelectric coefficients for the zinc-blende III-V semiconductors, {Al,Ga,In}-{N,P,As,Sb}. The results are obtained within the Heyd-Scuseria-Ernzerhof hybrid-functional approach in the framework of density functional theory and the Berry-phase theory of electric polarization. To achieve a meaningful interpretation of the results, we build an intuitive phenomenological model based on the description of internal strain and the dynamics of the electronic charge centers. We discuss in detail first- and second-order internal strain effects, together with strain-induced changes in ionicity. This analysis reveals that the relatively large importance in the III-Vs of non-linear piezoelectric effects compared to the linear ones arises because of a delicate balance between the ionic polarization contribution due to internal strain relaxation effects, and the contribution due to the electronic charge redistribution induced by macroscopic and internal strain.
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Submitted 19 February, 2015;
originally announced February 2015.
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Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
Authors:
Stefan Schulz,
Miguel A. Caro,
Conor Coughlan,
Eoin P. O'Reilly
Abstract:
We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The pres…
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We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The presented calculations show that while the electron states are mainly localized by well-width fluctuations, the holes states are already localized by random alloy fluctuations. These localization effects affect significantly the quantum well optical properties,leading to strong inhomogeneous broadening of the lowest interband transition energy. Our results are compared with experimental literature data.
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Submitted 22 January, 2015;
originally announced January 2015.
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Orbital-Free Density Functional Theory Implementation with the Projector Augmented-Wave Method
Authors:
J. Lehtomäki,
I. Makkonen,
M. A. Caro,
A. Harju,
O. Lopez-Acevedo
Abstract:
We present a computational scheme for orbital-free density functional theory (OFDFT) that simultaneously provides access to all-electron values and preserves the OFDFT linear scaling as a function of the system size. Using the projector augmented-wave method (PAW) in combination with real-space methods we overcome some obstacles faced by other available implementation schemes. Specifically, the ad…
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We present a computational scheme for orbital-free density functional theory (OFDFT) that simultaneously provides access to all-electron values and preserves the OFDFT linear scaling as a function of the system size. Using the projector augmented-wave method (PAW) in combination with real-space methods we overcome some obstacles faced by other available implementation schemes. Specifically, the advantages of using the PAW method are two fold. First, PAW reproduces all-electron values offering freedom in adjusting the convergence parameters and the atomic setups allow tuning the numerical accuracy per element. Second, PAW can provide a solution to some of the convergence problems exhibited in other OFDFT implementations based on Kohn-Sham codes. Using PAW and real-space methods, our orbital-free results agree with the reference all-electron values with a mean absolute error of 10~meV and the number of iterations required by the self-consistent cycle is comparable to the KS method. The comparison of all-electron and pseudopotential bulk modulus and lattice constant reveal an enormous difference, demonstrating that in order to assess the performance of OFDFT functionals it is necessary to use implementations that obtain all-electron values. The proposed combination of methods is the most promising route currently available. We finally show that a parametrized kinetic energy functional can give lattice constants and bulk moduli comparable in accuracy to those obtained by the KS PBE method, exemplified with the case of diamond.
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Submitted 28 November, 2014; v1 submitted 20 August, 2014;
originally announced August 2014.
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Extended scheme for the projection of material tensors of arbitrary symmetry onto a higher symmetry tensor
Authors:
Miguel A. Caro
Abstract:
I propose a straightforward generalization of the projection scheme for elastic tensors introduced by Moakher and Norris [J. Elasticity 85, 215 (2006)] that takes into account also rotations. The "closest" tensor of any desired symmetry to the original tensor of lower symmetry is "closer" in this generalized scheme. The method has an important application in the context of the special quasirandom…
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I propose a straightforward generalization of the projection scheme for elastic tensors introduced by Moakher and Norris [J. Elasticity 85, 215 (2006)] that takes into account also rotations. The "closest" tensor of any desired symmetry to the original tensor of lower symmetry is "closer" in this generalized scheme. The method has an important application in the context of the special quasirandom structure (SQS) method for the computational modeling of alloys, whereby the supercell's symmetry, and therefore that of the tensors representing its properties, is reduced with respect to the material's underlying symmetry. The approach allows to extract the tensor components most representative of the macroscopic symmetry of the material. Although the approach is general, in the present case I apply it to the elastic tensor and give numerical examples. Simple approximate analytical expressions for cubic materials are also provided.
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Submitted 6 August, 2014;
originally announced August 2014.
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Composition dependent band gap and band edge bowing in AlInN: A combined theoretical and experimental study
Authors:
S. Schulz,
M. A. Caro,
L. -T. Tan,
P. J. Parbrook,
R. W. Martin,
E. P. O'Reilly
Abstract:
A combined experimental and theoretical study is presented of the band gap of AlInN, confirming the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition dependent bowing parameters for these quantities are extracted. Additionally, composition dependent band offsets for GaN/AlInN systems are provided. We show that local strain and built-in fiel…
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A combined experimental and theoretical study is presented of the band gap of AlInN, confirming the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition dependent bowing parameters for these quantities are extracted. Additionally, composition dependent band offsets for GaN/AlInN systems are provided. We show that local strain and built-in fields affect the band edges significantly, leading to optical polarization switching at much lower In composition than expected from a VCA approach.
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Submitted 23 October, 2013; v1 submitted 15 October, 2013;
originally announced October 2013.
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Theory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides
Authors:
Miguel A. Caro,
Stefan Schulz,
Eoin P. O'Reilly
Abstract:
We present a theory of local electric polarization in crystalline solids and apply it to study the case of wurtzite group-III nitrides. We show that a local value of the electric polarization, evaluated at the atomic sites, can be cast in terms of a summation over nearest-neighbor distances and Born effective charges. Within this model, the local polarization shows a direct relation to internal st…
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We present a theory of local electric polarization in crystalline solids and apply it to study the case of wurtzite group-III nitrides. We show that a local value of the electric polarization, evaluated at the atomic sites, can be cast in terms of a summation over nearest-neighbor distances and Born effective charges. Within this model, the local polarization shows a direct relation to internal strain and can be expressed in terms of internal strain parameters. The predictions of the present theory show excellent agreement with a formal Berry phase calculation for random distortions of a test-case CuPt-like InGaN alloy and InGaN supercells with randomly placed cations. While the present level of theory is appropriate for highly ionic compounds, we show that a more complex model is needed for less ionic materials, in which the strain dependence of Born effective charges has to be taken into account. Moreover, we provide ab initio parameters for GaN, InN and AlN, including hybrid functional values for the piezoelectric coefficients and the spontaneous polarization, which we use to accurately implement the local theory expressions. In order to calculate the local polarization potential, we also present a point dipole method. This method overcomes several limitations related to discretization and resolution which arise when obtaining the local potential by solving Poisson's equation on an atomic grid. Finally, we perform tight-binding supercell calculations to assess the impact of the local polarization potential arising from alloy fluctuations on the electronic properties of InGaN alloys. In particular, we find that the large upward bowing with composition of the InGaN valence band edge is strongly influenced by local polarization effects. Furthermore, our analysis allows us to extract composition-dependent bowing parameters for the energy gap and valence and conduction band edges.
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Submitted 5 December, 2013; v1 submitted 12 September, 2013;
originally announced September 2013.
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Impact of cation-based localized electronic states on the conduction and valence band structure of AlInN alloys
Authors:
S. Schulz,
M. A. Caro,
E. P. O'Reilly
Abstract:
We demonstrate that cation-related localized states strongly perturb the band structure of $\text{Al}_{1-x}\text{In}_x$N leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in $\text{Al}_{1-x}\text{In}_x$N for low In composition, $x$, and that these localized states dom…
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We demonstrate that cation-related localized states strongly perturb the band structure of $\text{Al}_{1-x}\text{In}_x$N leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in $\text{Al}_{1-x}\text{In}_x$N for low In composition, $x$, and that these localized states dominate the evolution of the band structure with increasing $x$. Therefore, the commonly used assumption of a single composition-independent bowing parameter breaks down when describing the evolution both of the conduction and of the valence band edge in $\text{Al}_{1-x}\text{In}_x$N.
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Submitted 28 April, 2014; v1 submitted 23 July, 2013;
originally announced July 2013.