Growth optimization and device integration of narrow-bandgap graphene nanoribbons
Authors:
Gabriela Borin Barin,
Qiang Sun,
Marco Di Giovannantonio,
Cheng-Zhuo Du,
Xiao-Ye Wang,
Juan Pablo Llinas,
Zafer Mutlu,
Yuxuan Lin,
Jan Wilhelm,
Jan Overbeck,
Colin Daniels,
Michael Lamparski,
Hafeesudeen Sahabudeen,
Mickael L. Perrin,
José I. Urgel,
Shantanu Mishra,
Amogh Kinikar,
Roland Widmer,
Samuel Stolz,
Max Bommert,
Carlo Pignedoli,
Xinliang Feng,
Michel Calame,
Klaus Müllen,
Akimitsu Narita
, et al. (4 additional authors not shown)
Abstract:
The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for succe…
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The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.
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Submitted 2 February, 2022;
originally announced February 2022.
Tuning the Fröhlich exciton-phonon scattering in monolayer MoS2
Authors:
Bastian Miller,
Jessica Lindlau,
Max Bommert,
Andre Neumann,
Hisato Yamaguchi,
Alexander Holleitner,
Alexander Högele,
Ursula Wurstbauer
Abstract:
A direct band gap, remarkable light-matter coupling as well as strong spin-orbit and Coulomb interaction establish two-dimensional (2D) crystals of transition metal dichalcogenides (TMDs) as an emerging material class for fundamental studies as well as novel technological concepts. Valley selective optical excitation allows for optoelectronic applications based on the momentum of excitons. In addi…
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A direct band gap, remarkable light-matter coupling as well as strong spin-orbit and Coulomb interaction establish two-dimensional (2D) crystals of transition metal dichalcogenides (TMDs) as an emerging material class for fundamental studies as well as novel technological concepts. Valley selective optical excitation allows for optoelectronic applications based on the momentum of excitons. In addition to lattice imperfections and disorder, scattering by phonons is a significant mechanism for valley depolarization and decoherence in TMDs at elevated temperatures preventing high-temperature valley polarization required for realistic applications. Thus, a detailed knowledge about strength and nature of the interaction of excitons with phonons is vital. We directly access exciton-phonon coupling in charge tunable single layer MoS2 devices by polarization resolved Raman spectroscopy. We observe a strong defect mediated coupling between the long-range oscillating electric field induced by the longitudinal optical (LO) phonon in the dipolar medium and the exciton. We find that this so-called Fröhlich exciton LO-phonon interaction is suppressed by doping. This suppression correlates with a distinct increase of the degree of valley polarization of up to 20 % even at elevated temperatures of 220 K. Our result demonstrates a promising strategy to increase the degree of valley polarization towards room temperature valleytronic applications.
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Submitted 22 November, 2018;
originally announced November 2018.
